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IPB160N04S4LH1ATMA1

P1-P3P4-P6P7-P9
Data Sheet IPB160N04S4L-H1
OptiMOS
TM
-T2 Power-Transistor
Features
• N-channel Logic Level - Enhancement mode
• AEC qualified
• MSL1 up to 260°C peak reflow
• 175°C operating temperature
• Green product (RoHS compliant)
• 100% Avalanche tested
Maximum ratings, at T
j
=25 °C, unless otherwise specified
Parameter Symbol Conditions Unit
Continuous drain current
I
D
T
C
=25°C, V
GS
=10V
1)
160 A
T
C
=100 °C,
V
GS
=10 V
2)
160
Pulsed drain current
2)
I
D,pulse
T
C
=25 °C
640
Avalanche energy, single pulse
E
AS
I
D
=80 A
400 mJ
Avalanche current, single pulse
I
AS
-
160 A
Gate source voltage
V
GS
- +20/-16 V
Power dissipation
P
tot
T
C
=25 °C
167 W
Operating and storage temperature
T
j
, T
stg
- -55 ... +175 °C
IEC climatic category; DIN IEC 68-1 - - 55/175/56
Value
V
DS
40 V
R
DS(on)
1.5
mΩ
I
D
160 A
Product Summary
PG-TO263-7-3
Type Package Marking
IPB160N04S4L-H1 PG-TO263-7-3 4N04LH1
R
ev. 1.0 page 1 2013-05-27
Data Sheet IPB160N04S4L-H1
Parameter Symbol Conditions Unit
min. typ. max.
Thermal characteristics
2)
Thermal resistance, junction - case
R
thJC
---0.9K/W
Electrical characteristics, at T
j
=25 °C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage
V
(BR)DSS
V
GS
=0 V, I
D
= 1 mA
40 - - V
Gate threshold voltage
V
GS(th)
V
DS
=V
GS
, I
D
=110 µA
1.2 1.7 2.2
Zero gate voltage drain current
I
DSS
V
DS
=40 V, V
GS
=0 V,
T
j
=25 °C
-0.051µA
V
DS
=18 V, V
GS
=0 V,
T
j
=85 °C
2)
-120
Gate-source leakage current
I
GSS
V
GS
=20 V, V
DS
=0 V
- - 100 nA
Drain-source on-state resistance
R
DS(on)
V
GS
=4.5 V, I
D
=50 A
-1.62.0
mΩ
V
GS
=10 V, I
D
=100 A
-1.21.5
Values
R
ev. 1.0 page 2 2013-05-27
Data Sheet IPB160N04S4L-H1
Parameter Symbol Conditions Unit
min. typ. max.
D
y
namic characteristics
2)
Input capacitance
C
iss
- 11500 14950 pF
Output capacitance
C
oss
- 1920 2500
Reverse transfer capacitance
C
rss
- 100 230
Turn-on delay time
t
d(on)
-16-ns
Rise time
t
r
-20-
Turn-off delay time
t
d(off)
-70-
Fall time
t
f
-65-
Gate Char
g
e Characteristics
2)
Gate to source charge
Q
gs
-3444nC
Gate to drain charge
Q
gd
-1637
Gate charge total
Q
g
- 146 190
Gate plateau voltage
V
plateau
-3.0-V
Reverse Diode
Diode continous forward current
2)
I
S
- - 160 A
Diode pulse current
2)
I
S,pulse
- - 640
Diode forward voltage
V
SD
V
GS
=0 V, I
F
=100 A,
T
j
=25 °C
-0.91.3V
Reverse recovery time
2)
t
rr
-60-ns
Reverse recovery charge
2)
Q
rr
-80-nC
2)
Defined by design. Not subject to production test.
1)
Current is limited by bondwire; with an R
thJC
= 0.9 K/W the chip is able to carry 250A at 25°C.
V
R
=20 V, I
F
=50A,
di
F
/dt=100 A/µs
T
C
=25 °C
Values
V
GS
=0 V, V
DS
=25 V,
f=1 MHz
V
DD
=20 V, V
GS
=10 V,
I
D
=160 A, R
G
=3.5 Ω
V
DD
=32 V, I
D
=160 A,
V
GS
=0 to 10 V
R
ev. 1.0 page 3 2013-05-27
P1-P3P4-P6P7-P9

IPB160N04S4LH1ATMA1

Mfr. #:
Buy IPB160N04S4LH1ATMA1
Manufacturer:
Infineon Technologies
Description:
MOSFET N-CHANNEL 30/40V
Lifecycle:
New from this manufacturer.
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