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DVRN6056-7-F

P1-P3P4-P5
DVRN6056
Document number: DS30556 Rev. 5 - 2
1 of 5
www.diodes.com
March 2010
© Diodes Incorporated
DVRN6056
VOLTAGE REFERENCE ARRAY
Features
• Epitaxial Planar Die Construction
• Ideally Suited for Automated Assembly Processes
• Lead Free/RoHS Compliant Version (Notes 2 & 3)
• “Green” Device (Note 3)
Mechanical Data
• Case: SOT-26
• Case Material: Molded Plastic, “Green” Molding Compound
(Note 3) UL Flammability Classification Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020
• Terminal Connections: See Diagram
• Terminals: Matte Tin Finish annealed over Copper leadframe
(Lead Free Plating). Solderable per MIL-STD-202, Method 208
• Marking Information: See Page 4
• Ordering Information: See Page 4
• Weight: 0.008 grams (approximate)
Maximum Ratings, NPN Transistor Element (Q1) @T
A
= 25°C unless otherwise specified
Characteristic Symbol Value Unit
Collector-Base Voltage
V
CBO
60 V
Collector-Emitter Voltage
V
CEO
40 V
Emitter-Base Voltage
V
EBO
6.0 V
Collector Current - Continuous (Note 1)
I
C
600 mA
Maximum Ratings, Zener Element (Z1) @T
A
= 25°C unless otherwise specified
Characteristic Symbol Value Unit
Forward Voltage @ I
F
= 10mA V
F
0.9 V
Thermal Characteristics
Characteristic Symbol Value Unit
Power Dissipation (Note 1)
P
D
300 mW
Thermal Resistance, Junction to Ambient (Note 1)
R
θ
JA
417
°C/W
Operating and Storage Temperature Range
T
J
, T
STG
-55 to +150
°C
Notes: 1. Part mounted on FR-4 board with recommended pad layout, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.
2. No purposefully added lead.
3. Product manufactured with date code WN (Week 45, 2009) and newer are built with Green Molding Compound and Lead-free plating. Product
manufactured prior to date code WO are built with Tin-Lead plating, Non-Green Molding Compound and may contain Halogens or Sb
2
O
3
Fire Retardants.
Top View
Device Schematic
A
1
E
1
K
1
NC
C
1
B
1
Q1
Z1
DVRN6056
Document number: DS30556 Rev. 5 - 2
2 of 5
www.diodes.com
March 2010
© Diodes Incorporated
DVRN6056
Electrical Characteristics, NPN Transistor Element (Q1) @T
A
= 25°C unless otherwise specified
Characteristic Symbol Min Max Unit Test Condition
OFF CHARACTERISTICS (Note 4)
Collector-Base Breakdown Voltage
V
(
BR
)
CBO
60
⎯
V
I
C
= 100μA, I
E
= 0
Collector-Emitter Breakdown Voltage
V
(
BR
)
CEO
40
⎯
V
I
C
= 1.0mA, I
B
= 0
Emitter-Base Breakdown Voltage
V
(
BR
)
EBO
6.0
⎯
V
I
E
= 100μA, I
C
= 0
Collector Cutoff Current
I
CEX
⎯
100 nA
V
CE
= 35V, V
EB
(
OFF
)
= 0.4V
Base Cutoff Current
I
BL
⎯
100 nA
V
CE
= 35V, V
EB
(
OFF
)
= 0.4V
ON CHARACTERISTICS (Note 4)
DC Current Gain
h
FE
20
40
80
100
40
⎯
⎯
⎯
300
⎯
⎯
I
C
= 100µA, V
CE
= 1.0V
I
C
= 1.0mA, V
CE
= 1.0V
I
C
= 10mA, V
CE
= 1.0V
I
C
= 150mA, V
CE
= 1.0V
I
C
= 500mA, V
CE
= 2.0V
Collector-Emitter Saturation Voltage
V
CE(SAT)
⎯
0.40
0.75
V
I
C
= 150mA, I
B
= 15mA
I
C
= 500mA, I
B
= 50mA
Base-Emitter Saturation Voltage
V
BE(SAT)
0.75
⎯
0.95
1.2
V
I
C
= 150mA, I
B
= 15mA
I
C
= 500mA, I
B
= 50mA
SMALL SIGNAL CHARACTERISTICS
Output Capacitance
C
cb
⎯
6.5 pF
V
CB
= 5.0V, f = 1.0MHz, I
E
= 0
Input Capacitance
C
eb
⎯
30 pF
V
EB
= 0.5V, f = 1.0MHz, I
C
= 0
Input Impedance
h
ie
1.0 15
kΩ
V
CE
= 10V, I
C
= 1.0mA, f = 1.0kHz
Voltage Feedback Ratio
h
re
0.1 8.0 x 10
-4
Small Signal Current Gain
h
fe
40 500
⎯
Output Admittance
h
oe
1.0 30
μS
Current Gain-Bandwidth Product
f
T
250
⎯
MHz
V
CE
= 10V, I
C
= 20mA, f = 100MHz
SWITCHING CHARACTERISTICS
Delay Time
t
d
⎯
15 ns
V
CC
= 30V, I
C
= 150mA,
V
BE(off)
= 2.0V, I
B1
= 15mA Rise Time
t
r
⎯
20 ns
Storage Time
t
s
⎯
225 ns
V
CC
= 30V, I
C
= 150mA,
I
B1
= I
B2
= 15mA Fall Time
t
f
⎯
30 ns
Electrical Characteristics, Zener Element (Z1) @T
A
= 25°C unless otherwise specified
Zener Voltage Range (Note 4) Maximum Zener Impedance
Maximum Reverse
Leakage Current (Note 4)
V
Z
@ I
ZT
I
ZT
Z
ZT
@ I
ZT
Z
Z
K
@ I
ZK
= 0.5mA I
R
@ V
R
Nom (V) Min (V) Max (V) mA
Ω
μA
V
5.6 5.49 5.73 5 60 200 1.0 2.5
Notes: 4. Short duration pulse test used to minimize self-heating effect.
NPN Transistor Section (Q1)
0
50
100
25 50
75 100 125
150
175
200
P
,
P
O
WE
R
DISSI
P
A
T
I
O
N
(mW)
D
T , AMBIENT TEMPERATURE (°C)
Fig. 1 Power Dissipation vs. Ambient Temperature (Total Device)
A
150
200
250
300
350
0
400
1
10
1,000
100
0.1
1
10
1,000
100
h, D
C
C
U
R
R
EN
T
G
AIN
FE
I , COLLECTOR CURRENT (mA)
Fig. 2 Typical DC Current Gain vs. Collector Current
C
T = -25°C
A
T = +25°C
A
T = 125°C
A
V = 1.0V
CE
DVRN6056
Document number: DS30556 Rev. 5 - 2
3 of 5
www.diodes.com
March 2010
© Diodes Incorporated
DVRN6056
NPN Transistor Section (Q1)
1.0
5.0
20
10
30
0.1
101.0 50
C
A
P
A
C
I
T
A
N
C
E (pF)
V,
Capacitance Characteristics
R
REVERSE VOLTAGE (V)
Fig. 3 Typical
C
obo
C
ibo
f = 1MHz
0.001 0.01
1
10
0.1
100
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
I , BASE CURRENT (mA)
Fig. 4 Typical Collector Saturation Region
B
V,
C
O
LLE
C
T
O
R
-EMI
T
T
E
R
V
O
L
T
A
G
E (V)
CE
I = 1mA
C
I = 10mA
C
I = 30mA
C
I = 100mA
C
I = 300mA
C
1
10
100
1,000
V,
C
O
LLE
C
T
O
R
-EMI
T
T
E
R
SATURATION VOLTAGE (V)
CE(SAT)
I , COLLECTOR CURRENT (mA)
Fig. 5 Typical Collector-Emitter Saturation Voltage
vs. Collector Current
C
T = 25°C
A
T = -50°C
A
T = 150°C
A
0
0.1
0.2
0.3
0.4
0.5
I
I
C
B
= 10
10.1
10
100
V , BASE-EMI
T
T
E
R
T
U
R
N
-
O
N
V
O
L
T
A
G
E (V)
BE(ON)
I , COLLECTOR CURRENT (mA)
Fig. 6 Typical Base-Emitter Turn-On Voltage
vs. Collector Current
C
0.2
0.3
0.4
0.6
0.5
0.8
0.7
1.0
0.9
V = 5V
CE
T = 25°C
A
T = -50°C
A
T = 150°C
A
1
10
100
1,000
110100
I , COLLECTOR CURRENT (mA)
Fig. 7 Typical Gain-Bandwidth Product vs. Collector Current
C
f,
G
AI
N
-BA
N
DWID
T
H
P
R
O
D
U
C
T
(M
H
z)
T
V = 5V
CE
P1-P3P4-P5

DVRN6056-7-F

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Buy DVRN6056-7-F
Manufacturer:
Diodes Incorporated
Description:
Linear Voltage Regulators Array
Lifecycle:
New from this manufacturer.
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