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BUK9Y19-75B,115

P1-P3P4-P6P7-P9P10-P12P13-P15
BUK9Y19-75B All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved.
Product data sheet Rev. 04 — 13 April 2010 6 of 14
NXP Semiconductors
BUK9Y19-75B
N-channel TrenchMOS logic level FET
6. Characteristics
Table 6. Characteristics
Symbol Parameter Conditions Min Typ Max Unit
Static characteristics
V
(BR)DSS
drain-source
breakdown voltage
I
D
=0.25mA; V
GS
=0V; T
j
=25°C 75--V
I
D
=0.25mA; V
GS
=0V; T
j
= -55 °C 70 - - V
V
GS(th)
gate-source threshold
voltage
I
D
=1mA; V
DS
=V
GS
; T
j
= 175 °C;
see Figure 10; see Figure 11
0.5--V
I
D
=1mA; V
DS
=V
GS
; T
j
=25°C;
see Figure 10
; see Figure 11
1.25 1.65 2.15 V
I
D
=1mA; V
DS
=V
GS
; T
j
=-55°C;
see Figure 10; see Figure 11
--2.45V
I
DSS
drain leakage current V
DS
=75V; V
GS
=0V; T
j
= 175 °C - - 500 µA
V
DS
=75V; V
GS
=0V; T
j
= 25 °C - 0.02 1 µA
I
GSS
gate leakage current V
DS
=0V; V
GS
=+15V; T
j
= 25 °C - 2 100 nA
V
DS
=0V; V
GS
=-15V; T
j
= 25 °C - 2 100 nA
R
DSon
drain-source on-state
resistance
V
GS
=4.5V; I
D
=20A; T
j
=25°C --21mΩ
V
GS
=5V; I
D
=20A; T
j
= 175 °C;
see Figure 12
--48mΩ
V
GS
=5V; I
D
=20A; T
j
=25°C;
see Figure 13
- 15.9 19 mΩ
V
GS
=10V; I
D
=20A; T
j
= 25 °C - 14.7 18 mΩ
Dynamic characteristics
Q
G(tot)
total gate charge I
D
=20A; V
DS
=60V; V
GS
=5V;
T
j
=25°C; see Figure 14
-30-nC
Q
GS
gate-source charge - 4.9 - nC
Q
GD
gate-drain charge - 12 - nC
C
iss
input capacitance V
GS
=0V; V
DS
=25V; f=1MHz;
T
j
=25°C; see Figure 15
- 2322 3096 pF
C
oss
output capacitance - 258 309 pF
C
rss
reverse transfer
capacitance
- 107 146 pF
t
d(on)
turn-on delay time V
DS
=30V; R
L
=1.5Ω; V
GS
=5V;
R
G(ext)
=10Ω; T
j
=25°C
-13-ns
t
r
rise time - 11 - ns
t
d(off)
turn-off delay time - 77 - ns
t
f
fall time - 21 - ns
Source-drain diode
V
SD
source-drain voltage I
S
=20A; V
GS
=0V; T
j
=25°C;
see Figure 16
- 0.85 1.2 V
t
rr
reverse recovery time I
S
=20A; dI
S
/dt = -100 A/µs;
V
GS
=-10V; V
DS
=30V; T
j
=25°C
-57-ns
Q
r
recovered charge - 145 - nC
BUK9Y19-75B All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved.
Product data sheet Rev. 04 — 13 April 2010 7 of 14
NXP Semiconductors
BUK9Y19-75B
N-channel TrenchMOS logic level FET
Fig 6. Output characteristics: drain current as a
function of drain-source voltage; typical values
Fig 7. Drain-source on-state resistance as a function
of drain current; typical values
Fig 8. Forward transconductance as a function of
drain current; typical values
Fig 9. Transfer characteristics: drain current as a
function of gate-source voltage; typical values
003aad092
0
20
40
60
80
100
120
0246810
V
DS
(V)
I
D
(A)
3
5
2.8
2.6
4
V
GS
(V) = 10
003aad096
0
20
40
60
80
0 40 80 120
I
D
(A)
R
DSon
(m
Ω
)
2.8
3.2
3 4
5
2.6
V
GS
(V) = 10
003aad097
30
40
50
60
70
80
010203040
I
D
(A)
g
fs
(S)
003aad093
0
10
20
30
40
50
01234
V
GS
(V)
I
D
(A)
T
j
= 175
°
C
T
j
= 25
°
C
BUK9Y19-75B All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved.
Product data sheet Rev. 04 — 13 April 2010 8 of 14
NXP Semiconductors
BUK9Y19-75B
N-channel TrenchMOS logic level FET
Fig 10. Gate-source threshold voltage as a function of
junction temperature
Fig 11. Sub-threshold drain current as a function of
gate-source voltage
Fig 12. Normalized drain-source on-state resistance
factor as a function of junction temperature
Fig 13. Drain-source on-state resistance as a function
of gate-source voltage; typical values
003aad557
0
0.5
1
1.5
2
2.5
-60 0 60 120 180
T
j
(
°
C)
V
GS(th)
(V)
max
typ
min
003aad565
10
-6
10
-5
10
-4
10
-3
10
-2
10
-1
0123
V
GS
(V)
I
D
(A)
max
typ
min
03nq03
0
1
2
3
-60 -20 20 60 100 140 180
T
j
(
°
C)
a
003aad095
12
14
16
18
20
0 5 10 15
V
GS
(V)
R
DSON
(mΩ)
P1-P3P4-P6P7-P9P10-P12P13-P15

BUK9Y19-75B,115

Mfr. #:
Buy BUK9Y19-75B,115
Manufacturer:
Nexperia
Description:
MOSFET N-CHANNEL TRENCHMOS LOGIC LEVEL FET
Lifecycle:
New from this manufacturer.
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