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BB179B,115

P1-P3P4-P6P7-P8
1. Product profile
1.1 General description
The BB179B is a variable capacitance diode, fabricated in planar technology and
encapsulated in the SOD523 (SC-79) ultra small SMD plastic package. The excellent
matching performance is achieved by gliding matching and a Direct Matching Assembly
(DMA) procedure.
1.2 Features and benefits
Excellent linearity
Excellent matching to 2 % DMA
Ultra small SMD plastic package
C
d(28V)
: 2.1 pF; C
d(1V)
to C
d(28V)
ratio: 9
Low series resistance.
1.3 Applications
Electronic tuning in UHF television tuners
Voltage Controlled Oscillators (VCO).
2. Pinning information
[1] The marking bar indicates the cathode.
3. Ordering information
BB179B
UHF variable capacitance diode
Rev. 3 — 5 September 2011 Product data sheet
Table 1. Pinning
Pin Description Simplified outline
[1]
Symbol
1 cathode
2 anode
21
sym008
Table 2. Ordering information
Type number Package
Name Description Version
BB179B SC-79 plastic surface mounted package; 2 leads SOD523
BB179B All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.
Product data sheet Rev. 3 — 5 September 2011 2 of 8
NXP Semiconductors
BB179B
UHF variable capacitance diode
4. Marking
5. Limiting values
6. Characteristics
[1] V
R
is the value at which C
d
=9pF
Table 3. Marking
Type number Marking code
BB179B C
Table 4. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
V
R
reverse voltage - 32 V
V
RM
peak reverse voltage in series with a
10 k resistor
-35V
I
F
forward current - 20 mA
T
stg
storage temperature 55 +150 C
T
j
junction temperature 55 +125 C
Table 5. Characteristics
T
j
= 25
C unless otherwise specified.
Symbol Parameter Conditions Min Typ Max Unit
I
R
reverse current see Figure 2
V
R
=30V - - 10 nA
V
R
=30V; T
j
=85C - - 200 nA
r
s
diode series
resistance
f = 470 MHz
[1]
- 0.6 0.75
C
d
diode
capacitance
f=1MHz;
see Figure 1 and 3
V
R
= 1 V 18.22 - 20 pF
V
R
= 28 V 1.9 2.1 2.25 pF
capacitance ratio f = 1 MHz - 1.27 -
capacitance ratio f = 1 MHz 8.45 9 10
capacitance ratio f = 1 MHz - 1.05 -
capacitance
matching
V
R
= 1 V to 28 V; in a
sequence of 10 diodes
(gliding)
--2%
C
d1V
C
d2V
----------------
C
d1V
C
d28V
------------------
C
d25V
C
d28V
------------------
C
d
C
d
----------
BB179B All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.
Product data sheet Rev. 3 — 5 September 2011 3 of 8
NXP Semiconductors
BB179B
UHF variable capacitance diode
f=1MHz; T
j
=25C.
Fig 1. Diode capacitance as a function of reverse voltage; typical values.
T
j
=0C to 85 C.
Fig 2. Reverse current as a function of junction
temperature; maximum values.
Fig 3. Temperature coefficient of diode capacitance
as a function of reverse voltage; typical
values.
mbk440
8
4
12
20
16
24
C
d
(pF)
0
V
R
(V)
10
−1
10
2
101
mlc815
110
10
−3
10
−4
10
−5
10
−1
10
2
V
R
(V)
TC
d
(K
−1
)
P1-P3P4-P6P7-P8

BB179B,115

Mfr. #:
Buy BB179B,115
Manufacturer:
NXP Semiconductors
Description:
Varactor Diodes UHF VAR CAP 32V
Lifecycle:
New from this manufacturer.
Delivery:
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