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Table 2. THERMAL CHARACTERISTICS
Characteristic UnitMaxSymbol
THERMAL CHARACTERISTICS (SOT−723) (DTC113EM3)
Thermal Resistance, (Note 1)
Junction to Ambient (Note 2)
R
q
JA
480
205
°C/W
Junction and Storage Temperature Range T
J
, T
stg
−55 to +150 °C
THERMAL CHARACTERISTICS (SOT−1123) (NSBC113EF3)
Total Device Dissipation
T
A
= 25°C (Note 3)
(Note 4)
Derate above 25°C (Note 3)
(Note 4)
P
D
254
297
2.0
2.4
mW
mW/°C
Thermal Resistance, (Note 3)
Junction to Ambient (Note 4)
R
q
JA
493
421
°C/W
Thermal Resistance, Junction to Lead (Note 3)
R
q
JL
193 °C/W
Junction and Storage Temperature Range T
J
, T
stg
−55 to +150 °C
1. FR−4 @ Minimum Pad.
2. FR−4 @ 1.0 x 1.0 Inch Pad.
3. FR−4 @ 100 mm
2
, 1 oz. copper traces, still air.
4. FR−4 @ 500 mm
2
, 1 oz. copper traces, still air.
Table 3. ELECTRICAL CHARACTERISTICS (T
A
= 25°C, unless otherwise noted)
Characteristic
Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Collector−Base Cutoff Current
(V
CB
= 50 V, I
E
= 0)
I
CBO
100
nAdc
Collector−Emitter Cutoff Current
(V
CE
= 50 V, I
B
= 0)
I
CEO
500
nAdc
Emitter−Base Cutoff Current
(V
EB
= 6.0 V, I
C
= 0)
I
EBO
4.3
mAdc
Collector−Base Breakdown Voltage
(I
C
= 10 mA, I
E
= 0)
V
(BR)CBO
50
Vdc
Collector−Emitter Breakdown Voltage (Note 5)
(I
C
= 2.0 mA, I
B
= 0)
V
(BR)CEO
50
Vdc
ON CHARACTERISTICS
DC Current Gain (Note 5)
(I
C
= 5.0 mA, V
CE
= 10 V)
h
FE
3.0 5.0
Collector−Emitter Saturation Voltage (Note 5)
(I
C
= 10 mA, I
B
= 5.0 mA)
V
CE(sat)
0.25
Vdc
Input Voltage (off)
(V
CE
= 5.0 V, I
C
= 100 mA)
V
i(off)
1.2 0.5
Vdc
Input Voltage (on)
(V
CE
= 0.3 V, I
C
= 20 mA)
V
i(on)
2 1.6
Vdc
Output Voltage (on)
(V
CC
= 5.0 V, V
B
= 2.5 V, R
L
= 1.0 kW)
V
OL
0.2
Vdc
Output Voltage (off)
(V
CC
= 5.0 V, V
B
= 0.05 V, R
L
= 1.0 kW)
V
OH
4.9
Vdc
Input Resistor R1 0.7 1.0 1.3
kW
Resistor Ratio R
1
/R
2
0.8 1.0 1.2
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
5. Pulsed Condition: Pulse Width = 300 msec, Duty Cycle 2%.
MUN2230, MMUN2230L, MUN5230, DTC113EE, DTC113EM3, NSBC113EF3
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TYPICAL CHARACTERISTICS
MUN2230, MMUN2230L, MUN5230, DTC113EE, DTC113EM3, NSBC113EF3
Figure 2. V
CE(sat)
vs. I
C
1002030
I
C
, COLLECTOR CURRENT (mA)
100
1
0.1
40 50
Figure 3. DC Current Gain
Figure 4. Output Capacitance
10
1
0.1
0.01
010 40
50
I
C
, COLLECTOR CURRENT (mA)
100
10
0.1
11010
0
I
C
, COLLECTOR CURRENT (mA)
Figure 5. Output Current vs. Input Voltage
100
10
1
0.1
0 0.5
V
in
, INPUT VOLTAGE (V)
Figure 6. Input Voltage vs. Output Current
50
010 203040
3.6
2.8
0.4
1.2
0
V
R
, REVERSE VOLTAGE (V)
30
V
CE(sat)
, COLLECTOR−EMITTER VOLTAGE (V)
I
C
/I
B
= 10
150°C
25°C
V
CE
= 10 V
25°C
h
FE
, DC CURRENT GAIN
f = 10 kHz
I
E
= 0 V
T
A
= 25°C
0.8
1.6
2.0
2.4
3.2
C
ob
, OUTPUT CAPACITANCE (pF)
V
O
= 5 V
I
C
, COLLECTOR CURRENT (mA)
V
O
= 0.2 V
V
in
, INPUT VOLTAGE (V)
20
−55°C
1
0.1
150°C
−55°C
25°C
150°C
−55°C
1.0 1.5 2.0 2.5 3.0
150°C
25°C
−55°C
10
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PACKAGE DIMENSIONS
SC−59
CASE 318D−04
ISSUE H
STYLE 1:
PIN 1. BASE
2. EMITTER
3. COLLECTOR
e
A1
b
A
E
D
2
3
1
C
L
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETER.
2.4
0.094
0.95
0.037
0.95
0.037
1.0
0.039
0.8
0.031
ǒ
mm
inches
Ǔ
SCALE 10:1
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
SOLDERING FOOTPRINT*
H
E
DIM
A
MIN NOM MAX MIN
MILLIMETERS
1.00 1.15 1.30 0.039
INCHES
A1 0.01 0.06 0.10 0.001
b 0.35 0.43 0.50 0.014
c 0.09 0.14 0.18 0.003
D 2.70 2.90 3.10 0.106
E 1.30 1.50 1.70 0.051
e 1.70 1.90 2.10 0.067
L 0.20 0.40 0.60 0.008
2.50 2.80 3.00 0.099
0.045 0.051
0.002 0.004
0.017 0.020
0.005 0.007
0.114 0.122
0.059 0.067
0.075 0.083
0.016 0.024
0.110 0.118
NOM MAX
H
E

DTC113EET1G

Mfr. #:
Manufacturer:
ON Semiconductor
Description:
Bipolar Transistors - Pre-Biased NPN DIGITAL TRANSISTOR
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
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