KSC5042FTU

©2002 Fairchild Semiconductor Corporation Rev. B, December 2002

KSC5042F

NPN Triple Diffused Planar Silicon Transistor

Absolute Maximum Ratings

T

C

=25°C unless otherwise noted

Electrical Characteristics

T

C

=25°C unless otherwise noted

Symbol Parameter Value Units

V

CBO

Collector-Base Voltage 1500 V

V

CEO

Collector-Emitter Voltage 900 V

V

EBO

Emitter-Base Voltage 5 V

I

C

Collector Current (DC) 100 mA

I

CP

Collector Current (Pulse) 300 mA

P

C

Collector Dissipation (T

C

=25°C) 6 W

T

J

Junction Temperature 150 °C

T

STG

Storage Temperature - 55 ~ 150 °C

Symbol Parameter Test Condition Min. Typ. Max. Units

BV

CBO

Collector-Base Breakdown Voltage I

C

= 1mA, I

E

= 0 1500 V

BV

CEO

Collector-Emitter Breakdown Voltage I

C

= 5mA, I

B

= 0 900 V

BV

EBO

Emitter-Base Breakdown Voltage I

E

= 1mA, I

C

= 0 5 V

I

CBO

Collector Cut-off Current V

CB

= 900V, I

E

= 0 10 µA

I

EBO

Emitter Cut-off Current V

EB

= 4V, I

C

= 0 10 µA

h

FE

DC Current Gain V

CE

= 5V, I

C

= 10mA 30

V

CE

(sat) Collector-Emitter Saturation Voltage I

C

= 20mA, I

B

= 4mA 5 V

V

BE

(sat) Base-Emitter Saturation Voltage I

C

= 20mA, I

B

= 4mA 2 V

C

ob

Output Capacitance V

CB

= 100V, f = 1MHz 2.8 pF

KSC5042F

High Voltage Switchihg Dynamic Focus

Application

• High Collector-Emitter Breakdown Voltage : BV

CEO

=900V

•Small C

ob

=2.8pF (Typ.)

•Wide S.O.A

• High reliability

1

1.Base 2.Collector 3.Emitter

TO-220F

©2002 Fairchild Semiconductor Corporation Rev. B, December 2002

KSC5042F

Typical Characteristics

Figure 1. Static Characteristic Figure 2. DC current Gain

Figure 3. Base-Emitter Saturation Voltage

Collector-Emitter Saturation Voltage

Figure 4. Collector-Base Capacitance

Figure 5. Safe Operating Area Figure 6. Power Derating

0246810

0

20

40

60

80

100

I

B

= 1mA

I

B

= 0mA

I

B

= 2mA

I

B

= 3mA

I

B

= 4mA

I

B

= 5mA

I

B

= 6mA

I

B

= 7mA

I

B

= 8mA

I

B

= 9mA

I

B

= 10mA

I

C

[A], COLLECTOR CURRENT

V

CE

[V], COLLECTOR-EMITTER VOLTAGE

110100

1

10

100

V

CE

= 5V

h

FE

, DC CURRENT GAIN

I

C

[mA], COLLECTOR CURRENT

1 10 100

0.01

0.1

1

10

I

C

= 5 I

B

V

CE

(sat)

V

BE

(sat)

V

BE

(sat), V

CE

(sat)[V], SATURATION VOLTAGE

I

C

[mA], COLLECTOR CURRENT

0.1 1 10 100

1

10

f = 1MHz

C

ob

[pF], CAPACITANCE

V

CB

[V], COLLECTOR-BASE VOLTAGE

1 10 100 1000

1

10

100

DC

10

m

s

1

m

s

500

µ

s

200

µ

s

100

µ

s

I

CP

(max)

I

C

(max)

I

C

[mA], COLLECTOR CURRENT

V

CE

[V], COLLECTOR-EMITTER VOLTAGE

0 25 50 75 100 125 150 175

0

1

2

3

4

5

6

7

8

T

a

T

c

P

C

[W], POWER DISSIPATION

T

C

[

o

C], TEMPERATURE

Package Dimensions

©2002 Fairchild Semiconductor Corporation Rev. B, December 2002

KSC5042F

Dimensions in Millimeters

(7.00)

(0.70)

MAX1.47

(30°)

#1

3.30

±0.10

15.80

±0.20

15.87

±0.20

6.68

±0.20

9.75

±0.30

4.70

±0.20

10.16

±0.20

(1.00x45°)

2.54

±0.20

0.80

±0.10

9.40

±0.20

2.76

±0.20

0.35

±0.10

ø3.18

±0.10

2.54TYP

[2.54

±0.20

]

2.54TYP

[2.54

±0.20

]

0.50

+0.10

–0.05

TO-220F

KSC5042FTU

Mfr. #:

Manufacturer:

ON Semiconductor / Fairchild

Description:

Bipolar Transistors - BJT NPN Triple Diffused Planar Silicon

Lifecycle:

New from this manufacturer.

Delivery:

DHL FedEx Ups TNT EMS

Payment:

T/T Paypal Visa MoneyGram Western Union

Products related to this Datasheet