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BUL741
P1-P3
P4-P6
P7-P9
P10-P12
Electrical ch
aracteristics
BUL741, BUL741FP
4/12
Doc ID 13406 Rev
3
2 Electrical
characteristics
T
case
= 25 °C unless otherwise specified.
2.1 T
ypical
characteristic
T
able 4.
Electrical c
haracterist
ics
Symbol
Pa
rameter
T
est cond
itions
Min.
T
yp.
Max.
Unit
I
CES
Collector cut-off current
(V
BE
= 0)
V
CE
= 1050 V
0.2
10
µA
I
CEO
Collector cut-off current
(I
B
= 0)
V
CE
= 400 V
10
250
µA
V
(BR)EBO
Emitter-base breakdown
voltage (I
C
= 0)
I
E
= 1 mA
15
19
24
V
V
CEO(sus)
(1)
1.
Pulse test: pulse duration
≤
300 µs, duty cycle
≤
2 %
Collector-emitter
sustaining voltage (I
B
= 0)
I
C
= 10 mA
400
450
V
V
CE(sat)
(1)
Collector-emitter
saturation voltage
I
C
= 0.7 A I
B
= 0.14 A
I
C
= 2
A
I
B
= 0.6 A
0.15
0.5
0.5
1.5
V
V
V
BE(sat)
(1)
Base-emitter saturation
vol
t
a
g
e
I
C
= 2
A
I
B
= 0.6 A
1.1
1.5
V
h
FE
DC current gain
I
C
= 0.1 A
V
CE
= 5 V
I
C
= 0.45 A
V
CE
= 3 V
48
25
70
35
100
50
t
s
t
f
Resistive load
Storage time
Fa
l
l
t
i
m
e
V
CC
= 125 V
I
C
= 1 A
I
B(on)
= -I
B(off)
= 0.2 A
t
p
= 300
µs V
BB(off)
= - 5 V
2.5
350
3.5
500
µs
ns
E
ar
Repetitiv
e av
alanche
energy
L =
2
m
H
C
= 1
.
8
nF
V
BB(off)
= - 5V
5m
J
Figure 2.
Safe operating
area
Figure 3.
Derating curve
BUL741, BUL741FP
Electrical cha
racteristics
Doc ID 13406 Rev
3
5/12
Figure 4.
Output c
haracteris
tics
Figure 5.
Rev
erse
biased safe
operating area
Figure 6.
DC current gain (V
CE
= 3 V)
Figure 7.
DC current gain (V
CE
= 5 V)
Figure 8.
Base-emitter satura
tion
vol
t
a
g
e
Figure 9.
Collector
-emitter saturation
vo
lt
a
g
e
Electrical ch
aracteristics
BUL741, BUL741FP
6/12
Doc ID 13406 Rev
3
Figure 10.
Resistive load s
witching on
(h
FE
= 5)
Figure 11.
Resistive load switching on
(h
FE
= 10)
Figure 12.
Resistive load s
witching of
f
(h
FE
= 5)
Figure 13.
Resistive load switching off
(h
FE
= 10)
P1-P3
P4-P6
P7-P9
P10-P12
BUL741
Mfr. #:
Buy BUL741
Manufacturer:
STMicroelectronics
Description:
Bipolar Transistors - BJT PWR BIP/S.SIGNAL
Lifecycle:
New from this manufacturer.
Delivery:
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EMS
Payment:
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