Vishay Siliconix
SiR846DP
New Product
Document Number: 65171
S09-1810-Rev. A, 14-Sep-09
www.vishay.com
1
N-Channel 100-V (D-S) MOSFET
FEATURES
• Halogen-free According to IEC 61249-2-21
Definition
• TrenchFET
®
Power MOSFET
• 100 % R
g
Tested
• 100 % UIS Tested
• Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
• Primary Side Switch
• Isolated DC/DC Converters
• Full Bridge
PRODUCT SUMMARY
V
DS
(V) R
DS(on)
(Ω)
I
D
(A)
a
Q
g
(Typ.)
100
0.0078 at V
GS
= 10 V
60
35.7 nC
0.0085 at V
GS
= 7.5 V
60
Ordering Information: SiR846DP-T1-GE3 (Lead (Pb)-free and Halogen-free)
1
2
3
4
5
6
7
8
S
S
S
G
D
D
D
D
6.15 mm
5.15 mm
PowerPAK
®
SO-8
Bottom View
N-Channel MOSFET
G
D
S
Notes:
a. Package limited.
b. Surface Mounted on 1" x 1" FR4 board.
c. t = 10 s.
d. See Solder Profile (www.vishay.com/ppg?73257
). The PowerPAK SO-8 is a leadless package. The end of the lead terminal is exposed copper
(not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not
required to ensure adequate bottom side solder interconnection.
e. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.
f. Maximum under Steady State conditions is 54 °C/W.
ABSOLUTE MAXIMUM RATINGS T
A
= 25 °C, unless otherwise noted
Parameter Symbol Limit Unit
Drain-Source Voltage
V
DS
100
V
Gate-Source Voltage
V
GS
± 20
Continuous Drain Current (T
J
= 150 °C)
T
C
= 25 °C
I
D
60
a
A
T
C
= 70 °C
60
a
T
A
= 25 °C
20
b, c
T
A
= 70 °C
16
b, c
Pulsed Drain Current
I
DM
100
Continuous Source-Drain Diode Current
T
C
= 25 °C
I
S
60
a
T
A
= 25 °C
5.6
b, c
Single Pulse Avalanche Current
L = 0.1 mH
I
AS
35
Single Pulse Avalanche Energy
E
AS
61
mJ
Maximum Power Dissipation
T
C
= 25 °C
P
D
104
W
T
C
= 70 °C
66.6
T
A
= 25 °C
6.25
b, c
T
A
= 70 °C
4.0
b, c
Operating Junction and Storage Temperature Range
T
J
, T
stg
- 55 to 150
°C
Soldering Recommendations (Peak Temperature)
d, e
260
THERMAL RESISTANCE RATINGS
Parameter Symbol Typical Maximum Unit
Maximum Junction-to-Ambient
b, f
t ≤ 10 s
R
thJA
15 20
°C/W
Maximum Junction-to-Case (Drain) Steady State
R
thJC
0.9 1.2