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APT25GT120BRDQ2G

P1-P3P4-P6P7-P9
052-6269 Rev C 6-2008
APT25GT120BRDQ2(G)
V
GE
=15V,T
J
=125°C
V
GE
=15V,T
J
=25°C
V
CE
= 800V
R
G
= 5Ω
L = 100µH
SWITCHING ENERGY LOSSES (µJ) E
ON2
, TURN ON ENERGY LOSS (µJ) t
r,
RISE TIME (ns) t
d(ON)
, TURN-ON DELAY TIME (ns)
SWITCHING ENERGY LOSSES (µJ) E
OFF
, TURN OFF ENERGY LOSS (µJ) t
f,
FALL TIME (ns) t
d
(OFF)
, TURN-OFF DELAY TIME (ns)
I
CE
, COLLECTOR TO EMITTER CURRENT (A) I
CE
, COLLECTOR TO EMITTER CURRENT (A)
FIGURE9,Turn-OnDelayTimevsCollectorCurrent FIGURE10,Turn-OffDelayTimevsCollectorCurrent
I
CE
, COLLECTOR TO EMITTER CURRENT (A) I
CE
, COLLECTOR TO EMITTER CURRENT (A)
FIGURE11,CurrentRiseTimevsCollectorCurrent FIGURE12,CurrentFallTimevsCollectorCurrent
I
CE
, COLLECTOR TO EMITTER CURRENT (A) I
CE
, COLLECTOR TO EMITTER CURRENT (A)
FIGURE13,Turn-OnEnergyLossvsCollectorCurrent FIGURE14,TurnOffEnergyLossvsCollectorCurrent
R
G
, GATE RESISTANCE (OHMS) T
J
,JUNCTIONTEMPERATURE(°C)
FIGURE15,SwitchingEnergyLossesvs.GateResistance FIGURE16,SwitchingEnergyLossesvsJunctionTemperature
V
CE
= 800V
V
GE
= +15V
R
G
= 5Ω
V
CE
= 800V
T
J
= 25°C, or 125°C
R
G
= 5Ω
L = 100µH
30
25
20
15
10
5
0
70
60
50
40
30
20
10
0
10,000
8,000
6,000
4,000
2,000
0
18,000
16,000
14,000
12,000
10,000
8,000
6,000
4,000
2,000
0
200
180
160
140
120
100
80
60
40
20
0
50
45
40
35
30
25
20
15
10
5
0
2500
2000
1500
1000
500
0
9,000
8,000
7,000
6,000
5,000
4,000
3,000
2,000
1,000
0
V
GE
= 15V
V
CE
= 800V
V
GE
= +15V
R
G
= 5Ω
V
CE
= 800V
V
GE
= +15V
R
G
= 5Ω
10 15 20 25 30 35 40 45 50 55 10 15 20 25 30 35 40 45 50 55
10 15 20 25 30 35 40 45 50 55 10 15 20 25 30 35 40 45 50 55
10 15 20 25 30 35 40 45 50 55 10 15 20 25 30 35 40 45 50 55
0 10 20 30 40 50 0 25 50 75 100 125
R
G
= 5Ω, L = 100µH, V
CE
= 800V
T
J
= 125°C
T
J
= 25°C
T
J
= 125°C
T
J
= 25°C
R
G
= 5Ω, L = 100µH, V
CE
= 800V
T
J
= 25 or 125°C,V
GE
= 15V
T
J
= 125°C, V
GE
= 15V
T
J
= 25°C, V
GE
= 15V
E
on2,
50A
E
off,
50A
E
on2,
25A
E
off,
25A
E
on2,
12.5A
E
off,
12.5A
V
CE
= 800V
V
GE
= +15V
T
J
= 125°C
E
on2,
50A
E
off,
50A
E
on2,
25A
E
off,
25A
E
on2,
12.5A
E
off,
12.5A
052-6269 Rev C 6-2008
APT25GT120BRDQ2(G)
TYPICAL PERFORMANCE CURVES
0.40
0.35
0.30
0.25
0.20
0.15
0.10
0.05
0
Z
θ
JC
, THERMAL IMPEDANCE (°C/W)
0.3
D = 0.9
0.7
SINGLE PULSE
RECTANGULAR PULSE DURATION (SECONDS)
Figure19a,MaximumEffectiveTransientThermalImpedance,Junction-To-CasevsPulseDuration
10
-5
10
-4
10
-3
10
-2
10
-1
1.0
3,000
1,000
500
100
50
10
80
70
60
50
40
30
20
10
0
C, CAPACITANCE (
P
F)
I
C
, COLLECTOR CURRENT (A)
V
CE
, COLLECTOR-TO-EMITTER VOLTAGE (VOLTS) V
CE
, COLLECTOR TO EMITTER VOLTAGE
Figure17,CapacitancevsCollector-To-EmitterVoltage Figure18,MinimimSwitchingSafeOperatingArea
0 10 20 30 40 50 0 200 400 600 800 1000 1200 1400
FIGURE 19b, TRANSIENT THERMAL IMPEDANCE MODEL
5 10 15 20 25 30 35 40 45 50
F
MAX
, OPERATING FREQUENCY (kHz)
I
C
, COLLECTOR CURRENT (A)
Figure20,OperatingFrequencyvsCollectorCurrent
140
50
10
5
1
0.5
0.1
0.05
F
max
= min (f
max
, f
max2
)
0.05
f
max1
=
t
d(on)
+ t
r
+ t
d(off)
+ t
f
P
diss
- P
cond
E
on2
+ E
off
f
max2
=
P
diss
=
T
J
- T
C
R
θJC
C
oes
C
res
C
ies
0.178
0.182
0.0101
0.136
Power
(watts)
RC MODEL
Junction
temp. (°C)
Case temperature. (°C)
Peak T
J
= P
DM
x Z
θJC
+
T
C
Duty Factor D =
t
1
/
t
2
t
2
t
1
P
DM
Note:
052-6269 Rev C 6-2008
APT25GT120BRDQ2(G)
APT40DQ120
I
C
A
D.U.T.
V
CE
Figure21,InductiveSwitchingTestCircuit
V
CC
Figure22,Turn-onSwitchingWaveformsandDenitions
Figure23,Turn-offSwitchingWaveformsandDenitions
T
J
= 125°C
Collector Current
Collector Voltage
Gate Voltage
Switching Energy
5%
10%
t
d(on)
90%
10%
t
r
5%
T
J
= 125°C
Collector Voltage
Collector Current
Gate Voltage
Switching Energy
0
90%
t
d(off)
10%
t
f
90%
P1-P3P4-P6P7-P9

APT25GT120BRDQ2G

Mfr. #:
Buy APT25GT120BRDQ2G
Manufacturer:
Microchip / Microsemi
Description:
IGBT Transistors FG, IGBT, 1200V, TO-247, RoHS
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
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