2004 Nov 10 3
Philips Semiconductors Product specification
PNP high voltage transistors BF421; BF423
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
Note
1. Transistor mounted on a printed-circuit board.
THERMAL CHARACTERISTICS
Note
1. Transistor mounted on a printed-circuit board.
CHARACTERISTICS
T
amb
=25°C unless otherwise specified.
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
CBO
collector-base voltage open emitter
BF421 −−300 V
BF423 −−250 V
V
CEO
collector-emitter voltage open base
BF421 −−300 V
BF423 −−250 V
V
EBO
emitter-base voltage open collector −−5V
I
C
collector current (DC) −−50 mA
I
CM
peak collector current −−100 mA
I
BM
peak base current −−50 mA
P
tot
total power dissipation T
amb
≤ 25 °C; note 1 − 830 mW
T
stg
storage temperature −65 +150 °C
T
j
junction temperature − 150 °C
T
amb
ambient temperature −65 +150 °C
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
th(j-a)
thermal resistance from junction to ambient note 1 150 K/W
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
I
CBO
collector-base cut-off current V
CB
= −200 V; I
E
=0 A −−10 nA
V
CB
= −200 V; I
E
= 0 A; T
j
= 150 °C −−10 µA
I
EBO
emitter-base cut-off current V
EB
= −5 V; I
C
=0 A −−50 nA
h
FE
DC current gain V
CE
= −20 V; I
C
= −25 mA 50 −
V
CEsat
collector-emitter saturation voltage I
C
= −30 mA; I
B
= −5mA −−0.6 V
C
re
feedback capacitance V
CE
= −30 V; I
C
=i
c
= 0 A; f = 1 MHz − 1.6 pF
f
T
transition frequency V
CE
= −10 V; I
C
= −10 mA; f = 100 MHz 60 − MHz
