MMBT4401K Datasheet MMBT4401K | P1-P3

MMBT4401K Rev. C

MMBT4401K NPN Epitaxial Silicon Transistor

tm

November 2006

MMBT4401K

NPN Epitaxial Silicon Transistor

Switching Transistor

Absolute Maximum Ratings T

a

= 25°C unless otherwise noted

Electrical Characteristics T

a

=25°C unless otherwise noted

* Pulse Test: Pulse Width≤300µs, Duty Cycle≤2%

Symbol Parameter Value Units

V

CBO

Collector-Base Voltage 60 V

V

CEO

Collector-Emitter Voltage 40 V

V

EBO

Emitter-Base Voltage 6 V

I

C

Collector Current 600 mA

P

C

Collector Dissipation 350 mW

T

J,

T

STG

Operating Junction and Storage Temperature Range -55 ~ 150 °C

Symbol Parameter Test Condition Min. Max. Units

BV

CBO

Collector-Base Breakdown Voltage I

C

= 100µA, I

E

= 0 60 V

BV

CEO

Collector-Emitter Breakdown Voltage * I

C

= 1.0mA, I

B

= 0 40 V

BV

EBO

Emitter-Base Breakdown Voltage I

E

= 100µA, I

C

= 0 6 V

I

BEV

Base Cut-off Current V

CE

= 35V, V

EB

= 0.4V 100 nA

I

CEX

Collector Cut-off Current V

CE

= 35V, V

EB

= 0.4V 100 nA

h

FE

DC Current Gain * V

CE

= 1V, I

C

= 0.1mA

V

CE

= 1V, I

C

= 1mA

V

CE

= 1V, I

C

= 10mA

V

CE

= 1V, I

C

= 150mA

V

CE

= 2V, I

C

= 500mA

20

40

80

100

40

300

V

CE

(sat) Collector-Emitter Saturation Voltage * I

C

= 150mA, I

B

= 15mA

I

C

= 500mA, I

B

= 50mA

0.4

0.75

V

BE

(sat) Base-Emitter Saturation Voltage * I

C

= 150mA, I

B

= 15mA

I

C

= 500mA, I

B

= 50mA

0.75 0.95

1.2

V

f

T

Current Gain Bandwidth Product I

C

= 20mA, V

CE

= 10V, f = 100MHz 250 MHz

C

ob

Output Capacitance V

CB

=5V, I

E

=0, f=100KHz 6.5 pF

t

ON

Turn On Time V

CC

= 30V, V

BE

= 2V

I

C

= 150mA, I

B1

= 15mA

35 ns

t

OFF

Turn Off Time V

CC

= 30V, I

C

= 150mA

I

B1

= I

B2

= 15mA

255 ns

1. Base 2. Emitter 3. Collector

SOT-23

1

2

3

2XK

Marking

2 www.fairchildsemi.com

MMBT4401K Rev. C

MMBT4401K NPN Epitaxial Silicon Transistor

Typical Performance Characteristics

Figure 1. DC current Gain Figure 2. Collector-Emitter Saturation Voltage

Figure 3. Base-Emitter Saturation Voltage Figure 4. Collector - Base Leakage Current

Figure 5. Collector-Base Capacitance Figure 6. Power Dissipation vs

Ambient Temperature

1 10 100

0

50

100

150

200

250

300

350

400

125

o

C

75

o

C

50

o

C

25

o

C

0

o

C

100

o

C

Vce=5V

hfe, Current Gain

Collector Current, [mA]

1 10 100

0.0

0.1

0.2

0.3

0.4

125

o

C

100

o

C

75

o

C

50

o

C

25

o

C

0

o

C

Ic=10Ib

Vce(sat), Saturation Current,[V]

Collector Current, [mA]

1 10 100

0.3

0.4

0.5

0.6

0.7

0.8

0.9

1.0

125

o

C

100

o

C

75

o

C

50

o

C

25

o

C

0

o

C

Ic=10Ib

Vbe(sat), Saturation Current,[V]

Collector Current, [mA]

25 50 75 100 125 150

1

10

V

CB

= 40V

Leakage current of Collector - Base(nA)

Temperature, ['C]

1 10 100

1

10

I

E

= 0

f = 100KHz

C

cb

[pF], Capacitance

V

CB

[V], Collector-Base Voltage

0 25 50 75 100 125 150

0.0

0.1

0.2

0.3

0.4

P

D

- Power Dissipation (W)

Temperature, [

O

C]

3 www.fairchildsemi.com

MMBT4401K Rev. C

MMBT4401K NPN Epitaxial Silicon Transistor

Mechanical Dimensions

0.96~1.14

0.12

0.03~0.1

0

0.38 RE

F

0.40 ±0.03

2.90 ±0.10

0.95 ±0.03 0.95 ±0.03

1.90 ±0.03

0.508REF

0.97REF 1.30

±0.10

0.45~0.60

2.40

±0.10

+0.05

–0.02

3

0.20 MI

N

0.40 ±0.03

SOT-23

Dimensions in Millimeters

MMBT4401K

MMBT4401K

Products related to this Datasheet