Important notice
Dear Customer,
On 7 February 2017 the former NXP Standard Product business became a new company with the
tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS
semiconductors with its focus on the automotive, industrial, computing, consumer and wearable
application markets
In data sheets and application notes which still contain NXP or Philips Semiconductors references, use
the references to Nexperia, as shown below.
Instead of http://www.nxp.com, http://www.philips.com/ or http://www.semiconductors.philips.com/,
use http://www.nexperia.com
Instead of sales.addresses@www.nxp.com or sales.addresses@www.semiconductors.philips.com, use
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Replace the copyright notice at the bottom of each page or elsewhere in the document, depending on
the version, as shown below:
- © NXP N.V. (year). All rights reserved or © Koninklijke Philips Electronics N.V. (year). All rights
reserved
Should be replaced with:
- © Nexperia B.V. (year). All rights reserved.
If you have any questions related to the data sheet, please contact our nearest sales office via e-mail
or telephone (details via salesaddresses@nexperia.com). Thank you for your cooperation and
understanding,
Kind regards,
Team Nexperia
S
O
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2
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NX7002AK
60 V, single N-channel Trench MOSFET
6 August 2015 Product data sheet
Scan or click this QR code to view the latest information for this product
1. General description
N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23
(TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET
technology.
2. Features and benefits
Very fast switching
Trench MOSFET technology
ESD protected
3. Applications
Relay driver
High-speed line driver
Low-side loadswitch
Switching circuits
4. Quick reference data
Table 1. Quick reference data
Symbol Parameter Conditions Min Typ Max Unit
V
DS
drain-source voltage - - 60 V
V
GS
gate-source voltage
T
j
= 25 °C
-20 - 20 V
V
GS
= 10 V; T
sp
= 25 °C - - 300 mAI
D
drain current
V
GS
= 10 V; T
amb
= 25 °C [1] - - 190 mA
Static characteristics
R
DSon
drain-source on-state
resistance
V
GS
= 10 V; I
D
= 100 mA; T
j
= 25 °C - 3 4.5 Ω
[1]
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 1 cm
2
.
NXP Semiconductors
NX7002AK
60 V, single N-channel Trench MOSFET
NX7002AK All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2015. All rights reserved
Product data sheet 6 August 2015 2 / 16
5. Pinning information
Table 2. Pinning information
Pin Symbol Description Simplified outline Graphic symbol
1 G gate
2 S source
3 D drain
1 2
3
TO-236AB (SOT23)
6. Ordering information
Table 3. Ordering information
PackageType number
Name Description Version
NX7002AK TO-236AB plastic surface-mounted package; 3 leads SOT23
7. Marking
Table 4. Marking codes
Type number Marking code
[1]
NX7002AK %CM
[1] % = placeholder for manufacturing site code

NX7002AKVL

Mfr. #:
Manufacturer:
Nexperia
Description:
MOSFET NX7002AK/TO-236AB/REEL 11" Q3/
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

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