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STP12IE90F4

P1-P3P4-P6P7-P9P10-P11
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Electrical characteristics STP12IE90F4
4/11
2 Electrical characteristics
(T
case
= 25°C unless otherwise specified)
Table 3. Electrical characteristics
Symbol Parameter Test Conditions Min. Typ. Max. Unit
I
CS(SS)
Collector-source current
(V
BS
= V
GS
= 0)
V
CE
= 900V
100 µA
I
BS(OS)
Base-source current
(I
C
= 0, V
GS
= 0)
V
BS(OS)
= 30V
10 µA
I
SB(OS)
Source-base current
(I
C
= 0, V
GS
= 0)
V
SB(OS)
= 17V
100 µA
I
GS(OS)
Gate-source leakage
V
GS
= ± 17V
100 nA
V
CS(ON)
Collector-source ON
voltage
V
GS
= 10V _I
C
= 12A I
B
= 2.4A
V
GS
= 10V_ I
C
= 6A I
B
= 0.6A
1
0.6
V
V
h
FE
DC current gain
V
GS
= 10V_ I
C
= 12A V
CS
= 1V
V
GS
= 10V_ I
C
= 6A_ V
CS
= 1V
5
15
V
BS(ON)
Base Source ON voltage
V
GS
= 10V_ I
C
= 12A I
B
= 2.4A
V
GS
= 10V_ I
C
= 6A_ I
B
= 0.6A
1.5
1.2
V
V
V
GS(th)
Gate threshold voltage
V
BS
= V
GS
______I
B
= 250µA
23
4V
C
iss
Input capacitance
V
CS
=25V f =1MHz
V
GS
=0V
520 pF
Q
GS(tot)
Gate-source Charge
V
CS
=25V V
GS
=10V
V
CB
=0V I
C
=4A
21.3 nC
t
s
t
f
INDUCTIVE LOAD
Storage time
Fall time
V
GS
=10V R
G
=47Ω
V
Clamp
=720V t
p
=4µs
I
C
=6A I
B
=1.2A
610
10
ns
ns
t
s
t
f
INDUCTIVE LOAD
Storage time
Fall time
V
GS
=10V R
G
=47Ω
V
Clamp
=720V t
p
=4µs
I
C
=6A I
B
=0.6A
360
10
ns
ns
V
CSW
Maximum collector-
source voltage switched
without snubber
R
G
=47Ω h
FE
=5
I
C
= 12A
900 V
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STP12IE90F4 Electrical characteristics
5/11
2.1 Electrical characteristics (curves)
V
CS(dyn)
Collector-source
dynamic voltage
(500ns)
V
CC
=V
Clamp
=400V
V
GS
=10V I
C
= 6A
I
B
= 1.2A t
peak
=500ns
R
G
=47Ω I
Bpeak
= 6A (I
C
)
3.37 V
V
CS(dyn)
Collector-source
dynamic voltage
(1µs)
V
CC
=V
Clamp
=400V
V
GS
=10V I
C
= 6A
I
B
= 1.2A t
peak
=500ns
R
G
=47Ω I
Bpeak
= 6A (I
C
)
1.75 V
Table 3. Electrical characteristics
Symbol Parameter Test Conditions Min. Typ. Max. Unit
Figure 1. DC current gain Figure 2. Collector-source On voltage
Figure 3. Collector-source On voltage Figure 4. Base-source On voltage
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Electrical characteristics STP12IE90F4
6/11
Figure 5. Reverse biased SOA Figure 6. Dynamic collector-emitter
voltage
Figure 7. Inductive load switching time Figure 8. Inductive load switching time
P1-P3P4-P6P7-P9P10-P11

STP12IE90F4

Mfr. #:
Buy STP12IE90F4
Manufacturer:
STMicroelectronics
Description:
Gate Drivers Swtch Bi Transistr ESBT 900 V 12
Lifecycle:
New from this manufacturer.
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