H5N2522LS Preliminary
R07DS0057EJ0200 Rev.2.00 Page 2 of 6
Jul 23, 2010
Electrical Characteristics
(Ta = 25°C)
Item Symbol Min Typ Max Unit Test conditions
Drain to source breakdown voltage V
(BR)DSS
250 — — V I
D
= 10 mA, V
GS
= 0
Zero gate voltage drain current I
DSS
— — 10 A V
DS
= 250 V, V
GS
= 0
Gate to source leak current I
GSS
— — 0.1 A V
GS
= 30 V, V
DS
= 0
Gate to source cutoff voltage V
GS(off)
1.5 — 4.0 V V
DS
= 10 V, I
D
= 1 mA
Static drain to source on state
resistance
R
DS(on)
— 0.14 0.18 I
D
= 10 A, V
GS
= 10 V
Note4
Input capacitance Ciss — 1300 — pF
Output capacitance Coss — 185 — pF
Reverse transfer capacitance Crss — 62 — pF
V
DS
= 25 V
V
GS
= 0
f = 1 MHz
Turn-on delay time t
d(on)
— 27 — ns
Rise time t
r
— 41 — ns
Turn-off delay time t
d(off)
— 88 — ns
Fall time t
f
— 16 — ns
I
D
= 10 A
V
GS
= 10 V
R
L
= 12.5
Rg = 10
Total gate charge Qg — 47 — nC
Gate to source charge Qgs — 7 — nC
Gate to drain charge Qgd — 24.5 — nC
V
DD
= 200 V
V
GS
= 10 V
I
D
= 20 A
Body-drain diode forward voltage V
DF
— 0.99 1.54 V I
F
= 20 A, V
GS
= 0
Note4
Body-drain diode reverse recovery time t
rr
— 120 — ns
I
F
= 20 A, V
GS
= 0
di
F
/dt = 100 A/s
Notes: 4. Pulse test
