RHP020N06T100

1/4
www.rohm.com
c
2009 ROHM Co., Ltd. All rights reserved.
2009.03 - Rev.A
4V Drive Nch MOSFET
RHP020N06
zStructure zDimensions (Unit : mm)
Silicon N-channel MOSFET
zFeatures
1) Low On-resistance.
2) High speed switching.
3) Wide SOA.
zApplications
Switching
zPackaging specifications and h
FE zInner circuit
Package
Code
Taping
Basic ordering unit (pieces)
RHP020N06
T100
1000
Type
zAbsolute maximum ratings (Ta=25°C)
1
2
1
Parameter
VV
DSS
Symbol
VV
GSS
AI
D
AI
DP
AI
S
AI
SP
mW
W
P
D
°CTch
°CTstg
Limits Unit
Drain-source voltage
Gate-source voltage
Drain current
Total power dissipation
Channel temperature
Range of storage temperature
Continuous
Pulsed
Continuous
Pulsed
Source current
60
150
55 to +150
±20
±2
±8
2
500
8
2
1 Pw10µs, Duty cycle1%
2 When mounted on a 40 40 0.7mm ceramic board
+
+
zThermal resistance
Parameter
°C/W
°C/W
Rth(ch-a)
Symbol Limits Unit
C
hannel to ambient
250
62.5
When mounted on a 40 40 0.7mm ceramic board
+
+
MPT3
(1)Gate
(2)Drain
(3)Source
1.5
0.4
1.6
0.5
3.0
0.40.4
1.51.5
(3)(2)(1)
4.5
0.5
4.0
2.5
1.0
Abbreviated symbol : LR
SOURCE
DRAIN
GATE
1 ESD PROTECTION DIODE
2 BODY DIODE
2
1
RHP020N06
Data Sheet
2/4
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c
2009 ROHM Co., Ltd. All rights reserved.
2009.03 - Rev.A
zElectrical characteristics (Ta=25°C)
Parameter Symbol
I
GSS
Y
fs
Min.
Typ. Max.
Unit
Conditions
V
(BR) DSS
I
DSS
V
GS (th)
R
DS (on)
C
iss
C
oss
C
rss
t
d (on)
t
r
t
d (off)
t
f
Q
g
Q
gs
Q
gd
Gate-source leakage
Drain-source breakdown voltage
Zero gate voltage drain current
Gate threshold voltage
Static drain-source on-state
resistance
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Total gate charge
Gate-source charge
Gate-drain charge
Pulsed
−±10 µAV
GS
= ±20V, V
DS
=0V
V
DD
30V
60 −−VI
D
= 1mA, V
GS
=0V
−−1 µAV
DS
= 60V, V
GS
=0V
1.0 2.5 V V
DS
= 10V, I
D
= 1mA
150 200 I
D
= 2A, V
GS
= 10V
200 280 m
m
m
I
D
= 2A, V
GS
= 4.5V
240 340 I
D
= 2A, V
GS
= 4V
2.0 −−SV
DS
= 10V, I
D
= 2A
140 pF V
DS
= 10V
50
40
pF V
GS
=0V
7
pF f=1MHz
10
ns
22
ns
18
ns
7
ns
1
14 nC
2
nC V
GS
= 10V
−−nC I
D
= 2A
VDD 30V
I
D
= 1A
V
GS
= 10V
R
L
=30
R
G
=10
zBody diode characteristics (Source-drain) (Ta=25°C)
V
SD
−−1.2 V I
S
= 2A, V
GS
=0V
Forward voltage
Parameter Symbol
Min. Typ. Max.
Unit
Conditions
RHP020N06
Data Sheet
3/4
www.rohm.com
c
2009 ROHM Co., Ltd. All rights reserved.
2009.03 - Rev.A
zElectrical characteristics curves
0
2
4
6
8
10
0 0.2 0.4 0.6 0.8 1
Ta=25°C
Pulsed
V
GS
= 10V
V
GS
= 5.0V
V
GS
= 4.5V
V
GS
= 4.0V
V
GS
= 3.5V
V
GS
= 2.8V
V
GS
= 2.4V
0.001
0.01
0.1
1
10
01234
V
DS
= 10V
Pulsed
Ta= 125°C
Ta= 75°C
Ta= 25°C
Ta= - 25°C
0.01
0.1
1
10
0.01 0.1 1 10
V
GS
= 4.0V
V
GS
= 4.5V
V
GS
= 10V
Ta= 25°C
Pulsed
0.01
0.1
1
10
00.511.5
V
GS
=0V
Pulsed
Ta=125°C
Ta=75°C
Ta=25°C
Ta=-25°C
0
2
4
6
8
10
0246810
V
GS
= 2.4V
V
GS
= 10V
V
GS
= 5.0V
V
GS
= 4.0V
V
GS
= 4.5V
V
GS
= 3.0V
Ta=25°C
Pulsed
0
0
1
10
0.01 0.1 1 10
V
GS
= 4.5V
Pulsed
Ta=125°C
Ta=75°C
Ta=25°C
Ta= -25°C
0.01
0.1
1
10
0.01 0.1 1 10
V
GS
= 10V
Pulsed
Ta=125°C
Ta=75°C
Ta=25°C
Ta= -25°C
0.1
1
10
0.01 0.1 1 10
V
DS
= 10V
Pulsed
Ta= -25°C
Ta=2C
Ta=7C
Ta=125°C
0.01
0.1
1
10
0.01 0.1 1 10
V
GS
= 4.0V
Pulsed
Ta=125°C
Ta=7C
Ta=2C
Ta= -25°C
Fig.1 Typical Output Characteristics(
) Fig.2 Typical Output Characteristics(
) Fig.3 Typical Transfer Characteristics
Fig.4 Static Drain-Source On-State
Resistance vs. Drain Current(
)
Fig.5 Static Drain-Source On-State
Resistance vs. Drain Current(
)
Fig.6 Static Drain-Source On-State
Resistance vs. Drain Current(
)
Fig.7 Static Drain-Source On-State
Resistance vs. Drain Current(
)
Fig.9 Reverse Drain Current
vs. Sourse-Drain Voltage
Fig.8 Forward Transfer Admittance
vs. Drain Current
DRAIN CURRENT : I
D
[A]
DRAIN-SOURCE VOLTAGE : V
DS
[V] DRAIN-SOURCE VOLTAGE : V
DS
[V]
DRAIN CURRENT : I
D
[A]
DRAIN CURRENT : I
D
[A]
GATE-SOURCE VOLTAGE : V
GS
[V]
DRAIN-CURRENT : I
D
[A]
STATIC DRAIN-SOURCE ON-STATE
RESISTANCE : R
DS
(on)[
]
DRAIN-CURRENT : I
D
[A]
STATIC DRAIN-SOURCE ON-STATE
RESISTANCE : R
DS
(on)[
]
DRAIN-CURRENT : I
D
[A]
STATIC DRAIN-SOURCE ON-STATE
RESISTANCE : R
DS
(on)[
]
DRAIN-CURRENT : I
D
[A]
STATIC DRAIN-SOURCE ON-STATE
RESISTANCE : R
DS
(on)[
]
FORWARD TRANSFER
ADMITTANCE : |Yfs| [S]
DRAIN-CURRENT : I
D
[A]
REVERSE DRAIN CURRENT : Is
[
A
]
SOURCE-DRAIN VOLTAGE : V
SD
[V]

RHP020N06T100

Mfr. #:
Manufacturer:
Description:
MOSFET N-CH 60V 200MA
Lifecycle:
New from this manufacturer.
Delivery:
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