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Z0109MA0,412
P1-P3
P4-P6
P7-P9
P10-P12
P13-P14
WeEn Semiconductors
Z0109MA0
4Q Triac
Z0109MA0
All information provided in this document is subject to legal disclaimers.
©
WeEn Semiconductors Co., Ltd. 2016. All rights reserved
Product data sheet
29 September 2016
6 / 13
8. Thermal characteristics
Table 5. Thermal characteristics
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
R
th(j-lead)
thermal resistance
from junction to lead
full cycle;
Fig. 6
-
-
60
K/W
R
th(j-a)
thermal resistance
from junction to
ambient free air
full cycle; printed circuit board mounted;
lead length 4 mm
-
150
-
K/W
10
-1
10
-2
1
10
Z
th(j-lead)
(K/W)
t
p
(s)
10
-5
1
10
10
-1
10
-2
10
-4
10
-3
10
2
003aac206
t
p
P
t
Fig. 6. Transient thermal impedance from junction to lead as a function of pulse width
WeEn Semiconductors
Z0109MA0
4Q Triac
Z0109MA0
All information provided in this document is subject to legal disclaimers.
©
WeEn Semiconductors Co., Ltd. 2016. All rights reserved
Product data sheet
29 September 2016
7 / 13
9. Characteristics
Table 6. Characteristics
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
Static characteristics
V
D
= 12 V; I
T
= 0.1 A; T2+ G+;
T
j
= 25 °C;
Fig. 7
0.4
-
10
mA
V
D
= 12 V; I
T
= 0.1 A; T2+ G-;
T
j
= 25 °C;
Fig. 7
0.4
-
10
mA
V
D
= 12 V; I
T
= 0.1 A; T2- G-;
T
j
= 25 °C;
Fig. 7
0.4
-
10
mA
I
GT
gate trigger current
V
D
= 12 V; I
T
= 0.1 A; T2- G+;
T
j
= 25 °C;
Fig. 7
0.4
-
10
mA
V
D
= 12 V; I
G
= 0.1 A; T2+ G+;
T
j
= 25 °C;
Fig. 8
-
-
15
mA
V
D
= 12 V; I
G
= 0.1 A; T2+ G-;
T
j
= 25 °C;
Fig. 8
-
-
30
mA
V
D
= 12 V; I
G
= 0.1 A; T2- G-;
T
j
= 25 °C;
Fig. 8
-
-
15
mA
I
L
latching current
V
D
= 12 V; I
G
= 0.1 A; T2- G+;
T
j
= 25 °C;
Fig. 8
-
-
15
mA
I
H
holding current
V
D
= 12 V; T
j
= 25 °C;
Fig. 9
-
-
10
mA
V
T
on-state voltage
I
T
= 1 A; T
j
= 25 °C;
Fig. 10
-
1.3
1.6
V
V
D
= 12 V; I
T
= 0.1 A; T
j
= 25 °C;
Fig. 11
-
-
1
V
V
GT
gate trigger voltage
V
D
= 600 V; I
T
= 0.1 A; T
j
= 125 °C;
Fig. 11
0.2
-
-
V
I
D
off-state current
V
D
= 600 V; T
j
= 125 °C
-
-
0.5
mA
Dynamic characteristics
dV
D
/dt
rate of rise of off-state
voltage
V
DM
= 402 V; T
j
= 110 °C; (V
DM
= 67%
of V
DRM
); exponential waveform; gate
open circuit;
Fig. 12
120
-
-
V/µs
dV
com
/dt
rate of change of
commutating voltage
V
D
= 400 V; T
j
= 110 °C; dI
com
/
dt = 0.44 A/ms; gate open circuit
2
-
-
V/µs
WeEn Semiconductors
Z0109MA0
4Q Triac
Z0109MA0
All information provided in this document is subject to legal disclaimers.
©
WeEn Semiconductors Co., Ltd. 2016. All rights reserved
Product data sheet
29 September 2016
8 / 13
T
j
(°C)
-50
150
100
0
50
003aaa205
2
1
3
4
0
I
GT(25°C)
I
GT
(1)
(2)
(3)
(4)
(1) T2- G+
(2) T2- G-
(3) T2+ G-
(4) T2+ G+
Fig. 7. Normalized gate trigger current as a function of
junction temperature
T
j
(°C)
-50
150
100
0
50
003aaa203
1
2
3
0
I
L
I
L(25°C)
Fig. 8. Normalized latching current as a function of
junction temperature
T
j
(°C)
-50
150
100
0
50
003aaa204
1
2
3
0
I
H(25°C)
I
H
Fig. 9. Normalized holding current as a function of
junction temperature
003aac258
0
0.4
0.8
1.2
1.6
2
0
0.4
0.8
1.2
1.6
2
V
T
(V)
I
T
(A)
(1)
(2)
(3)
V
o
= 1.13 V
R
s
= 0.31 Ω
(1) T
j
= 125 °C; typical values
(2) T
j
= 125 °C; maximum values
(3) T
j
= 25 °C; maximum values
Fig. 10. On-state current as a function of on-state
voltage
P1-P3
P4-P6
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P10-P12
P13-P14
Z0109MA0,412
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Manufacturer:
WeEn Semiconductors
Description:
Triacs 600 V 1 A TO92
Lifecycle:
New from this manufacturer.
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