BTA208-800B/L01,12

NXP Semiconductors
BTA208-800B
3Q Hi-Com Triac
BTA208-800B All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2014. All rights reserved
Product data sheet 11 August 2014 6 / 13
8. Thermal characteristics
Table 5. Thermal characteristics
Symbol Parameter Conditions Min Typ Max Unit
full cycle - - 2 K/WR
th(j-mb)
thermal resistance
from junction to
mounting base
half cycle - - 2.4 K/W
R
th(j-a)
thermal resistance
from junction to
ambient
in free air - 60 - K/W
NXP Semiconductors
BTA208-800B
3Q Hi-Com Triac
BTA208-800B All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2014. All rights reserved
Product data sheet 11 August 2014 7 / 13
9. Characteristics
Table 6. Characteristics
Symbol Parameter Conditions Min Typ Max Unit
Static characteristics
V
D
= 12 V; I
T
= 0.1 A; T2+ G+;
T
j
= 25 °C; Fig. 6
2 18 50 mA
V
D
= 12 V; I
T
= 0.1 A; T2+ G-;
T
j
= 25 °C; Fig. 6
2 21 50 mA
I
GT
gate trigger current
V
D
= 12 V; I
T
= 0.1 A; T2- G-;
T
j
= 25 °C; Fig. 6
2 34 50 mA
V
D
= 12 V; I
G
= 0.1 A; T2+ G+;
T
j
= 25 °C; Fig. 7
- 31 60 mA
V
D
= 12 V; I
G
= 0.1 A; T2+ G-;
T
j
= 25 °C; Fig. 7
- 34 90 mA
I
L
latching current
V
D
= 12 V; I
G
= 0.1 A; T2- G-;
T
j
= 25 °C; Fig. 7
- 30 60 mA
I
H
holding current V
D
= 12 V; T
j
= 25 °C; Fig. 8 - 31 60 mA
V
T
on-state voltage I
T
= 10 A; T
j
= 25 °C; Fig. 9 - 1.3 1.65 V
V
D
= 12 V; I
T
= 0.1 A; T
j
= 25 °C;
Fig. 10
- 0.7 1 VV
GT
gate trigger voltage
V
D
= 400 V; I
T
= 0.1 A; T
j
= 125 °C;
Fig. 10
0.25 0.4 - V
I
D
off-state current V
D
= 800 V; T
j
= 125 °C - 0.1 0.5 mA
Dynamic characteristics
dV
D
/dt rate of rise of off-state
voltage
V
DM
= 535 V; T
j
= 125 °C; (V
DM
= 67%
of V
DRM
); exponential waveform; gate
open circuit
1000 4000 - V/µs
dI
com
/dt rate of change of
commutating current
V
D
= 400 V; T
j
= 125 °C; I
T(RMS)
= 8 A;
dV
com
/dt = 20 V/µs; snubberless
condition; gate open circuit; Fig. 11
- 14 - A/ms
t
gt
gate-controlled turn-on
time
I
TM
= 12 A; V
D
= 800 V; I
G
= 0.1 A; dI
G
/
dt = 5 A/µs
- 2 - µs
NXP Semiconductors
BTA208-800B
3Q Hi-Com Triac
BTA208-800B All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2014. All rights reserved
Product data sheet 11 August 2014 8 / 13
T
j
(°C)
- 50 1501000 50
003aac888
1
2
3
0
(1)
(2)
(3)
I
GT
I
GT(25°C)
(1) T2- G-
(2) T2+ G-
(3) T2+ G+
Fig. 6. Normalized gate trigger current as a function of
junction temperature
T
j
(°C)
-50 1501000 50
001aab100
1
2
3
0
I
L
I
L(25°C)
Fig. 7. Normalized latching current as a function of
junction temperature
T
j
(°C)
-50 1501000 50
001aab099
1
2
3
0
I
H
I
H(25°C)
Fig. 8. Normalized holding current as a function of
junction temperature
003aaa971
V
T
(V)
0 321
10
15
5
20
25
I
T
(A)
0
(1) (2) (3)
V
o
= 1.264 V; R
s
= 0.0378 Ω
(1) T
j
= 125 °C; typical values
(2) T
j
= 125 °C; maximum values
(3) T
j
= 25 °C; maximum values
Fig. 9. On-state current as a function of on-state
voltage

BTA208-800B/L01,12

Mfr. #:
Manufacturer:
WeEn Semiconductors
Description:
Triacs 3 QUADRANT TRIAC
Lifecycle:
New from this manufacturer.
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