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BSS123W-7-F

P1-P3P4-P5
BSS123W
N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
V
(BR)DSS
R
DS(ON)
I
D
T
A
= +25°C
100V
6.0Ω @ V
GS
= 10V
170mA
Description
This MOSFET is designed to minimize the on-
state
resistance (R
DS(ON)
)
and yet maintain superior switching performance,
making it ideal for high efficiency power management applications.
Applications
• Small Servo Motor Control
• Power MOSFET Gate Drivers
• Switching Applications
Features
• Low Gate Threshold Voltage
• Low Input Capacitance
• Fast Switching Speed
• Low Input/Output Leakage
• High Drain-Source Voltage Rating
• Totally Lead-Free & Fully RoHS compliant (Notes 1 & 2)
• Halogen and Antimony Free. “Green” Device (Note 3)
• Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
• Case: SOT323
• Case Material: Molded Plastic, "Green" Molding Compound.
UL Flammability Classification Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020
• Terminal Connections: See Diagram
• Terminals: Matte Tin Finish Annealed over Alloy 42 Leadframe
(Lead Free Plating). Solderable per MIL-STD-202, Method 208
• Weight: 0.006 grams (Approximate)
Ordering Information (Note 4)
Compliance
Case
Standard
SOT323
Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
Date Code Key
Year
2002
2003
2004
2005
2006
…
2012
2013
2014
2015
2016
2017
2018
2019
Code
N P R S T … Z A B C D E F G
Month
Jan
Feb
Mar
Apr
May
Jun
Jul
Aug
Sep
Oct
Nov
Dec
Code
1
2
3
4
5
6
7
8
9
O
N
D
SOT323
Top View
Equivalent Circuit
Top View
G
S
D
e3
D
S
G
K23
YM
K23 = Product Type Marking Code
YM = Date Code Marking
Y
or Y = Year (ex: A = 2013)
M = Month (ex: 9 = September)
BSS123W
Document number: DS30368 Rev. 12 - 2
1 of 5
www.diodes.com
August 2014
© Diodes Incorporated
BSS123W
Maximum Ratings (@T
A
= +25°C, unless otherwise specified.)
Characteristic
Symbol
Value
Units
Drain-Source Voltage
V
DSS
100 V
Drain-Gate Voltage R
GS
≤
20KΩ
V
DGR
100 V
Gate-Source Voltage Continuous
V
GSS
±
20
V
Drain Current (Note 5) Continuous
Pulsed
I
D
I
DM
170
680
mA
Thermal Characteristics (@T
A
= +25°C, unless otherwise specified.)
Characteristic
Symbol
Value
Units
Total Power Dissipation (Note 5)
P
D
200 mW
Thermal Resistance, Junction to Ambient (Note 5)
R
θJA
625
°C/W
Operating and Storage Temperature Range
T
J
, T
STG
-55 to +150
°C
Electrical Characteristics (@T
A
= +25°C, unless otherwise specified.)
Characteristic
Symbol
Min
Typ
Max
Unit
Test Condition
OFF CHARACTERISTICS (Note 6)
Drain-Source Breakdown Voltage
BV
DSS
100
V
V
GS
= 0V, I
D
= 250µA
Zero Gate Voltage Drain Current
I
DSS
1.0
10
µA
nA
V
DS
= 100V, V
GS
= 0V
V
DS
= 20V, V
GS
= 0V
Gate-Body Leakage, Forward
I
GSSF
50
nA
V
GS
= 20V, V
DS
= 0V
ON CHARACTERISTICS (Note 6)
Gate Threshold Voltage
V
GS(th)
0.8
1.4
2.0
V
V
DS
= V
GS
, I
D
= 1mA
Static Drain-Source On-Resistance
R
DS(ON)
6.0
10
Ω
V
GS
= 10V, I
D
= 0.17A
V
GS
= 4.5V, I
D
= 0.17A
Forward Transconductance
g
FS
80
370
mS
V
DS
= 10V, I
D
= 0.17A, f = 1.0KHz
Drain-Source Diode Forward Voltage
V
SD
0.84
1.3
V
V
GS
= 0V, I
S
= 0.34A
DYNAMIC CHARACTERISTICS (Note 7)
Input Capacitance
C
iss
29
60
pF
V
DS
= 25V, V
GS
= 0V, f = 1.0MHz
Output Capacitance
C
oss
10 15 pF
Reverse Transfer Capacitance
C
rss
2 6 pF
SWITCHING CHARACTERISTICS(Note 7)
Turn-On Rise Time
t
r
8 ns
V
DD
= 30V, I
D
= 0.28A,
R
GEN
= 6.0Ω, V
GS
= 10V
Turn-Off Fall Time
t
f
16 ns
Turn-On Delay Time
t
D(ON)
8 ns
Turn-Off Delay Time
t
D(OFF)
13 ns
Notes: 5. Part mounted on FR-4 board with recommended pad layout, which can be found on our website at http://www.diodes.com.
6. Short duration pulse test used to minimize self-heating effect.
7. Guaranteed by design. Not subject to production testing.
BSS123W
Document number: DS30368 Rev. 12 - 2
2 of 5
www.diodes.com
August 2014
© Diodes Incorporated
BSS123W
0
0.2
0.7
0
1
3
4
5
I , DRAIN-SOURCE CURRENT (A)
D
V , DRAIN-SOURCE VOLTAGE (V)
Fig. 1 On-Region Characteristics
DS
2
0.6
0.5
0.1
0.3
0.4
0.8
1.2
1.6
0.1 0.2
R , NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
DS(ON)
I , DRAIN-SOURCE CURRENT (A)
Fig. 2 On-Resistance Variation with Gate Voltage
and Drain-Source Current
D
2.0
2.4
0.3 0.4 0.5 0.6
0.7
0.8
0.9
-50 0 75 100 125
150
V NORMAL
IZED THRESHOL
D VOLTAGE
GS(th),
T , JUNCTION TEMPERATURE (ºC)
Fig. 3 Gate Threshold Variation with Temperature
J
1
1.1
1.2
-25 25
50
V = V
I = 250 A
DS GS
D
µ
0.4
0.8
1.2
-50
0
75 100 125 150
R NORMALIZED ON-RESISTANCE
DS(ON),
T , JUNCTION TEMPERATURE (ºC)
Fig. 4 On-Resistance Variation with Temperature
J
1.6
1.8
2.2
-25 25 50
0.6
1
1.4
2
0
50
0
5
15
20
25
C, CAPACITANCE (pF)
V , DRAIN-SOURCE VOLTAGE (V)
Fig. 5 Typical Capacitance
DS
10
40
30
10
20
0
50
100
100
200
P , POWER DISSIPATION (mW)
D
T , AMBIENT TEMPERATURE (°C)
Fig. 6 Power Derating Curve, Total Package
A
150
200
250
0
BSS123W
Document number: DS30368 Rev. 12 - 2
3 of 5
www.diodes.com
August 2014
© Diodes Incorporated
P1-P3P4-P5

BSS123W-7-F

Mfr. #:
Buy BSS123W-7-F
Manufacturer:
Diodes Incorporated
Description:
MOSFET 100V 200mW
Lifecycle:
New from this manufacturer.
Delivery:
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