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BC847BLD-7

P1-P3P4-P4
BC847BLD
SMALL SIGNAL NPN TRANSISTOR WITH CONTROLLED BASE-EMITTER VOLTAGE
Features
• Low Deviation in Base-Emitter Voltage
• Surface Mount Package
• Ideally Suited for Automated Assembly Processes
• Lead Free by Design/RoHS Compliant (Note 1)
• "Green" Device (Note 2)
• Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
• Case: SOT-23
• Case material: Molded Plastic. “Green” Molding
Compound. UL Flammability Classification Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020D
• Terminal Connections: See Diagram
• Terminals: Finish - Matte Tin annealed over Alloy 42
leadframe. Solderable per MIL-STD-202, Method 208
• Marking Information: See Page 3
• Ordering Information: See Page 3
• Weight: 0.008 grams (approximate)
SOT-23
C
12
3
E
B
Schematic & Pin Configuration
Maximum Ratings @T
A
= 25°C unless otherwise specified
Characteristic Symbol Value Unit
Collector-Base Voltage
V
CBO
50 V
Collector-Emitter Voltage
V
CEO
45 V
Emitter-Base Voltage
V
EBO
6 V
Output Current - Continuous (Note 3)
I
C
200 mA
Peak Collector Current
I
CM
200 mA
Peak Emitter Current
I
EM
200 mA
Power Dissipation (Note 3)
P
d
300 mW
Power Deration
P
der
2.4 mW/°C
Thermal Characteristics
Characteristic Symbol Value Unit
Thermal Resistance, Junction to Ambient Air (Note 3)
R
θ
JA
417 °C/W
Operating and Storage Junction Temperature Range
T
j
, T
STG
-55 to +150 °C
Notes: 1. No purposefully added lead.
2. Diode’s Inc.’s “Green” policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
3. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on page 4 or on Diodes Inc. suggested pad layout document
AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.
DS30824 Rev. 4 - 2 1 of 4
www.diodes.com
BC847BLD
© Diodes Incorporated
Please click here to visit our online spice models database.
Electrical Characteristics: NPN Transistor @T
A
= 25°C unless otherwise specified
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 4)
Collector-Base Breakdown Voltage
V
(BR)CBO
50 — — V
I
C
= 10μA, I
E
= 0
Collector-Emitter Breakdown Voltage
V
(BR)CEO
45 — — V
I
C
= 1.0mA, I
B
= 0
Emitter-Base Breakdown Voltage
V
(BR)EBO
6 — — V
I
E
= 10μA, I
C
= 0
Collector Cutoff Current
I
CEX
— — 15 nA
V
CE
= 50V, V
EB(OFF)
= 3.0V
Base Cutoff Current (I
BEX
) I
BL
— — 15 nA
V
CE
= 40V, V
EB(OFF)
= 3.0V
15 nA
V
CB
= 40V, I
E
= 0
Collector-Base Cut Off Current — —
I
CBO
5
μA
V
CB
= 30V, T
A
= 150
o
C
Collector-Emitter Cut Off Current, I
O(OFF)
I
CEO
— — 50 nA
V
CE
= 40V, I
B
= 0
Emitter-Base Cut Off Current
I
EBO
— — 50 nA
V
EB
= 5V, I
C
= 0
ON CHARACTERISTICS (Note 4)
180 — — —
V
CE
= 5V, I
C
= 100μA
150 — — —
V
CE
= 5V, I
C
= 500μA
220 — — —
V
CE
= 5V, I
C
= 1mA
DS30824 Rev. 4 - 2 2 of 4
www.diodes.com
BC847BLD
© Diodes Incorporated
220 — — —
V
CE
= 5V, I
C
= 2mA
150 — — —
V
CE
= 5V, I
C
= 5mA
DC Current Gain
h
fe
150 — — —
V
CE
= 5V, I
C
= 10mA
— 0.09 0.18 V
I
C
= 10mA, I
B
= 0.5mA
Collector-Emitter Saturation Voltage
V
CE(SAT)
— 0.2 0.4 V
I
C
= 100mA, I
B
= 5mA
Base-Emitter Turn-On Voltage
V
BE(ON)
647 657 667 mV
V
CE
= 5V, I
C
= 2mA
— — 0.8 V
I
C
= 10mA, I
B
= 0.5mA
Base-Emitter Saturation Voltage
V
BE(SAT)
— — 0.9 V
I
C
= 100mA, I
B
= 5mA
SMALL SIGNAL CHARACTERISTICS
Output Capacitance
C
OBO
— 3 — pF
V
CB
= 5.0V, f = 1.0 MHz,
I
E
= 0
Input Impedance
h
ie
— 4.5 —
KΩ
Voltage Feedback Ratio
h
re
— 2 — x 10E-4
Small Signal Current Gain
h
fe
— 200 — —
Output Admittance
h
oe
— 30 —
μS
V
CE
= 5.0V, I
C
= 2mA,
f = 1.0KHz
Current Gain-Bandwidth Product
f
T
100
—
— MHz
V
CE
= 20V, I
C
= 10 mA,
f = 100 MHz
Noise Figure NF — — 10 dB
V
CE
= 5V, I
C
= 100µA,
R
S
= 1KΩ, f = 1kHz
Notes: 4. Short duration pulse test used to minimize self-heating effect.
0
50
100
25 50 75 100
125
150
175
P
,
P
O
WE
R
DISSI
P
A
T
I
O
N (mW)
D
T , AMBIENT TEMPERATURE (°C)
Fig. 1 Maximum Power Dissipation vs.
Ambient Temperature
A
150
200
250
300
350
0
R
θ
JA
= 417 C/W
o
110
100
1,000
I , COLLECTOR CURRENT (mA)
Fig. 2 Typical h vs. I
C
FE C
h
D
C
C
U
R
R
E
N
T
G
A
I
N
F
E
,
0
50
100
150
200
250
300
350
400
450
T = 150°C
A
T = 125°C
A
T = 85°C
A
T = 25°C
A
T = -55°C
A
V= 5V
C E
1
10
100
1,000
V
C
O
LLE
C
T
O
R
EMI
T
T
E
R
SATURATION VOLTAGE (V)
CE(SAT),
I , COLLECTOR CURRENT (mA)
Fig. 4 Typical V vs. I
C
CE(SAT) C
0
0.1
0.2
0.3
0.4
0.5
0.6
0.1
I/I=10
cb
T = 150°C
A
T = 85°C
A
T = 25°C
A
T = 125°C
A
T = -55°C
A
1
1
I , COLLECTOR CURRENT (A)
C
V , COLLECTOR EMITTER VOLTAGE (V)
Fig. 3 Typical I vs. V
CE
CCE
0
0.02
0.04
0.06
0.08
0.1
0.12
0.14
0.16
0.18
0.2
0.2 0.4
0.6
0.8 1.2
1.4 1.6
1.8
2
I = 4mA
b
I 1.5mA
b
I = 1mA
b
I = 0.5mA
b
I = 2mA
b
I 3.5mA
b
=
I = 3mA
b
I = 4.5mA
b
I 2.5mA
b
=
I 5mA
b
=
1
10
100 1,000
V BASE EMI
T
T
E
R
SATURATION VOLTAGE (V)
BE(SAT),
I , COLLECTOR CURRENT (mA)
Fig. 6 Typical V vs. I
C
BE(SAT) C
0
0.1
I/I=10
cb
T = -55°C
A
T = 150°C
A
T = 125°C
A
T = 85°C
A
T = 25°C
A
1
10
100 1,000
V BASE EMI
T
T
E
R
V
O
L
T
A
G
E (V)
BE,
I , COLLECTOR CURRENT (mA)
Fig. 5 Typical V vs. I
C
BE C
0
0.1
V= 1V
CE
T = -55°C
A
T = 150°C
A
T = 85°C
A
T = 125°C
A
T = 25°C
A
Ordering Information (Note 5)
DS30824 Rev. 4 - 2 3 of 4
www.diodes.com
BC847BLD
© Diodes Incorporated
Device
Packaging Shipping
BC847BLD-7
SOT-23 3000/Tape & Reel
Notes: 5. For packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.
Marking Information
KLD = Product Type Marking Code
YM = Date Code Marking
Y = Year ex: T = 2006
M = Month ex: 9 = September
KLD
YM
Date Code Key
Year 2006 2007 2008 2009 2010 2011 2012 2013 2014 2015
Code T U V W X Y Z A B C
Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec
Code 1 2 3 4 5 6 7 8 9 O N D
P1-P3P4-P4

BC847BLD-7

Mfr. #:
Buy BC847BLD-7
Manufacturer:
Diodes Incorporated
Description:
Bipolar Transistors - BJT NPN BIPOLAR
Lifecycle:
New from this manufacturer.
Delivery:
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