BAT54W-G
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Vishay Semiconductors
Rev. 1.1, 22-Feb-18
1
Document Number: 85885
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Small Signal Schottky Diode
DESIGN SUPPORT TOOLS
MECHANICAL DATA
Case: SOD-123
Weight: approx. 9.4 mg
Packaging codes/options:
18/10K per 13" reel (8 mm tape), 10K/box
08/3K per 7" reel (8 mm tape), 15K/box
FEATURES
• These diodes feature very low turn-on voltage
and fast switching
• These devices are protected by a PN junction
guard ring against excessive voltage, such as
electrostatic discharges
• AEC-Q101 qualified available
(part number on request)
• Base P/N-G3 - green, commercial grade
• Material categorization:
for definitions of compliance please see
www.vishay.com/doc?99912
Note
(1)
Valid provided that electrodes are kept at ambient temperature
Note
(1)
Valid provided that electrodes are kept at ambient temperature
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PARTS TABLE
PART ORDERING CODE CIRCUIT CONFIGURATION TYPE MARKING REMARKS
BAT54W-G BAT54W-G3-08 or BAT54W-G3-18 Single L8 Tape and reel
ABSOLUTE MAXIMUM RATINGS (T
amb
= 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION SYMBOL VALUE UNIT
Repetitive peak reverse voltage V
RRM
30 V
Forward continuous current
(1)
I
F
200 mA
Repetitive peak forward current
(1)
t
p
< 1 s, G < 0.5 I
FRM
300 mA
Surge forward current
(1)
t
p
= 10 ms I
FSM
600 mA
Power dissipation
(1)
P
tot
150 mW
THERMAL CHARACTERISTICS (T
amb
= 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION SYMBOL VALUE UNIT
Thermal resistance junction to ambient air
(1)
R
thJA
650 K/W
Maximum junction temperature T
j
125 °C
Storage temperature range T
stg
-65 to +150 °C
Operating temperature range T
op
-55 to +125 °C