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STP75N75F4

P1-P3P4-P6P7-P9P10-P12
This is information on a product in full production.
July 2012 Doc ID 023484 Rev 1 1/12
12
STP75N75F4
N-channel 75 V, 0.0092 Ω typ., 78 A STripFET™ DeepGATE™
Power MOSFET in a TO-220 package
Datasheet — production data
Features
■ N-channel enhancement mode
■ 100% avalanched rated
■ Low gate charge
■ Very low on-resistance
Applications
■ Switching applications
Description
This device is an N-channel Power MOSFET
developed using ST’s STripFET™ DeepGATE™
technology. The device has a new gate structure
and is specially designed to minimize on-state
resistance to provide superior switching
performance.
Figure 1. Internal schematic diagram
Type V
DSS
R
DS(on)
max I
D
STP75N75F4 75 V < 0.011 Ω 78 A
TO-220
1
2
3
TAB
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Table 1. Device summary
Order codes Marking Package Packaging
STP75N75F4 75N75F4 TO-220 Tube
www.st.com
Contents STP75N75F4
2/12 Doc ID 023484 Rev 1
Contents
1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
3 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
STP75N75F4 Electrical ratings
Doc ID 023484 Rev 1 3/12
1 Electrical ratings
Table 2. Absolute maximum ratings
Symbol Parameter Value Unit
V
DS
Drain-source voltage 75 V
V
GS
Gate-source voltage ± 20 V
I
D
Drain current (continuous) at T
C
= 25 °C 78 A
I
D
Drain current (continuous) at T
C
= 100 °C 55 A
I
DM
(1)
1. Pulse width limited by safe operating area
Drain current (pulsed) 312 A
P
TOT
Total dissipation at T
C
= 25 °C 150 W
Derating factor 1 W/°C
E
AS
(2)
2. Starting T
j
= 25 °C, I
D
= 35 A, V
DD
= 50 V
Single pulse avalanche energy 185 mJ
T
stg
Storage temperature
– 55 to 175 °C
T
j
Operating junction temperature
Table 3. Thermal data
Symbol Parameter Value Unit
R
thj-case
Thermal resistance junction-case max 1 °C/W
R
thj-a
Thermal resistance junction-ambient max 62.5 °C/W
P1-P3P4-P6P7-P9P10-P12

STP75N75F4

Mfr. #:
Buy STP75N75F4
Manufacturer:
STMicroelectronics
Description:
MOSFET N-Ch 75V 0.0092 Ohm 78A STripFET DGATE
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
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