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PHB33NQ20T,118

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PHB33NQ20T_2 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 02 — 3 February 2009 3 of 12
NXP Semiconductors
PHB33NQ20T
N-channel TrenchMOS standard level FET
Fig 1. Normalized continuous drain current as a
function of mounting base temperature
Fig 2. Normalized total power dissipation as a
function of mounting base temperature
Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage
T
mb
(°C)
0 20015050 100
03aa24
40
80
120
I
der
(%)
0
T
mb
(°C)
0 20015050 100
03aa16
40
80
120
P
der
(%)
0
03ao10
10
-1
1
10
10
2
1 10 10
2
10
3
V
DS
(V)
I
D
(A)
DC
100
μ
s
10 ms
Limit R
DSon
= V
DS
/ I
D
1 ms
t
p
= 10
μ
s
PHB33NQ20T_2 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 02 — 3 February 2009 4 of 12
NXP Semiconductors
PHB33NQ20T
N-channel TrenchMOS standard level FET
5. Thermal characteristics
Table 5. Thermal characteristics
Symbol Parameter Conditions Min Typ Max Unit
R
th(j-a)
thermal resistance from
junction to ambient
mounted on a printed circuit board;
minimum footprint; vertical in still air
-50-K/W
R
th(j-mb)
thermal resistance from
junction to mounting
base
see Figure 4 - - 0.65 K/W
Fig 4. Transient thermal impedance from junction to mounting base as a function of pulse duration
03ao09
10
-3
10
-2
10
-1
1
10
10
-5
10
-4
10
-3
10
-2
10
-1
1
t
p
(s)
Z
th(j-mb)
(K/W)
single pulse
δ
= 0.5
0.2
0.1
0.05
0.02
t
p
T
P
t
t
p
T
δ =
PHB33NQ20T_2 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 02 — 3 February 2009 5 of 12
NXP Semiconductors
PHB33NQ20T
N-channel TrenchMOS standard level FET
6. Characteristics
Table 6. Characteristics
Symbol Parameter Conditions Min Typ Max Unit
Static characteristics
V
(BR)DSS
drain-source
breakdown voltage
I
D
=250µA; V
GS
=0V; T
j
=-55°C 180 - - V
I
D
=250µA; V
GS
=0V; T
j
=25°C 200 - - V
V
GS(th)
gate-source threshold
voltage
I
D
=1mA; V
DS
= V
GS
; T
j
= 175 °C;
see Figure 7; see Figure 8
1- - V
I
D
=1mA; V
DS
= V
GS
; T
j
=25°C;
see Figure 7
; see Figure 8
234V
I
D
=1mA; V
DS
= V
GS
; T
j
=-55°C;
see Figure 7
; see Figure 8
--4.4V
I
DSS
drain leakage current V
DS
=160V; V
GS
=0V; T
j
= 175 °C - - 500 µA
V
DS
=160V; V
GS
=0V; T
j
=25°C --1µA
I
GSS
gate leakage current V
GS
=20V; V
DS
=0V; T
j
= 25 °C - 10 100 nA
V
GS
=-20V; V
DS
=0V; T
j
= 25 °C - 10 100 nA
R
DSon
drain-source on-state
resistance
V
GS
=10V; I
D
=15A; T
j
=25°C;
see Figure 9; see Figure 10
-6577mΩ
V
GS
=10V; I
D
=15A; T
j
= 175 °C;
see Figure 9
; see Figure 10
- 182 215 mΩ
Dynamic characteristics
Q
G(tot)
total gate charge I
D
=25A; V
DS
=100V; V
GS
=10V;
T
j
=25°C; see Figure 11
- 32.2 - nC
Q
GS
gate-source charge - 6.5 - nC
Q
GD
gate-drain charge - 9.6 - nC
C
iss
input capacitance V
DS
=25V; V
GS
= 0 V; f = 1 MHz;
T
j
=25°C; see Figure 12
- 1870 - pF
C
oss
output capacitance - 230 - pF
C
rss
reverse transfer
capacitance
-70-pF
t
d(on)
turn-on delay time V
DS
=100V; R
L
=4Ω; V
GS
=10V;
R
G(ext)
=6Ω; T
j
=25°C
-12-ns
t
r
rise time - 35 - ns
t
d(off)
turn-off delay time - 43 - ns
t
f
fall time - 45 - ns
Source-drain diode
V
SD
source-drain voltage I
S
=25A; V
GS
=0V; T
j
=25°C;
see Figure 13
- 0.87 1.2 V
t
rr
reverse recovery time I
S
=20A; dI
S
/dt = -100 A/µs; V
GS
=0V;
V
DS
=25V; T
j
=25°C
- 150 - ns
Q
r
recovered charge - 645 - nC
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PHB33NQ20T,118

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Manufacturer:
Nexperia
Description:
MOSFET TRENCHMOS
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