VS-15ETH03S-M3, VS-15ETH03-1-M3
www.vishay.com
Vishay Semiconductors
Revision: 24-Oct-17
1
Document Number: 96230
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Hyperfast Rectifier, 15 A FRED Pt
®
FEATURES
• Hyperfast recovery time
• Low forward voltage drop
• Low leakage current
• 175 °C operating junction temperature
• Meets MSL level 1, per J-STD-020, LF maximum
peak of 245 °C
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
DESCRIPTION / APPLICATIONS
Vishay Semiconductors 300 V series are the state of the art
hyperfast recovery rectifiers designed with optimized
performance of forward voltage drop and hyperfast
recovery time.
The planar structure and the platinum doped life time control
guarantee the best overall performance, ruggedness and
reliability characteristics.
These devices are intended for use in the output rectification
stage of SMPS, UPS, DC/DC converters as well as
freewheeling diodes in low voltage inverters and chopper
motor drives.
Their extremely optimized stored charge and low recovery
current minimize the switching losses and reduce over
dissipation in the switching element and snubbers.
PRIMARY CHARACTERISTICS
I
F(AV)
15 A
V
R
300 V
V
F
at I
F
0.85 V
t
rr
(typ.) 40 ns
T
J
max. 175 °C
Package D
2
PAK (TO-263AB), TO-262AA
Circuit configuration Single
D
2
PAK (TO-263AB)
TO-262AA
1
3
2
1
3
2
Anode
1
3
Ba
se
cathode
2
N/C
Anode
1
3
2
N/C
VS-15ETH03S-M3 VS-15ETH03-1-M3
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS MAX. UNITS
Repetitive peak reverse voltage V
RRM
300 V
Average rectified forward current I
F(AV)
T
C
= 142 °C 15
A
Non-repetitive peak surge current I
FSM
T
J
= 25 °C 140
Operating junction and storage temperatures T
J
, T
Stg
-65 to +175 °C
ELECTRICAL SPECIFICATIONS (T
J
= 25 °C unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Breakdown voltage,
blocking voltage
V
BR
,
V
R
I
R
= 100 μA 300 - -
V
Forward voltage V
F
I
F
= 15 A - 1.05 1.25
I
F
= 15 A, T
J
= 125 °C - 0.85 1.00
Reverse leakage current I
R
V
R
= V
R
rated - 0.05 40
μA
T
J
= 125 °C, V
R
= V
R
rated - 12 400
Junction capacitance C
T
V
R
= 300 V - 45 - pF
Series inductance L
S
Measured lead to lead 5 mm from package body - 8 - nH
