NTMFS4921N
http://onsemi.com
4
0
10
20
30
40
50
60
70
80
90
0123456
Figure 1. On−Region Characteristics
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
I
D
, DRAIN CURRENT (A)
10 V
T
J
= 25°C
V
GS
= 4.5 V
5.0 V
4.0 V
3.8 V
3.6 V
3.4 V
3.2 V
3.0 V
2.8 V
2.6 V
0
10
20
30
40
50
60
70
80
90
100
0123456
I
D
, DRAIN CURRENT (A)
Figure 2. Transfer Characteristics
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
V
DS
≥ 10 V
T
J
= 25°C
T
J
= 125°C
T
J
= −55°C
0
0.01
0.02
0.03
0.04
246810
Figure 3. On−Resistance vs. Gate−to−Source
Voltage
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
ID = 30 A
T
J
= 25°C
R
DS(on)
, DRAIN−TO−SOURCE RESISTANCE (W)
0.002
0.0045
0.007
0.0095
0.012
0.0145
0.017
0.0195
30 40 50 60 70 80 90 100
Figure 4. On−Resistance vs. Drain Current and
Gate Voltage
I
D
, DRAIN CURRENT (A)
R
DS(on)
, DRAIN−TO−SOURCE RESISTANCE (W)
V
GS
= 4.5 V
V
GS
= 11.5 V
T
J
= 25°C
0.6
0.8
1
1.2
1.4
1.6
1.8
−50 −25 0 25 50 75 100 125 150
Figure 5. On−Resistance Variation with
Temperature
T
J
, JUNCTION TEMPERATURE (°C)
R
DS(on)
, DRAIN−TO−SOURCE
RESISTANCE (NORMALIZED)
ID = 30 A
V
GS
= 10 V
10
100
1000
10000
5 1015202530
Figure 6. Drain−to−Source Leakage Current
vs. Voltage
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
I
DSS
, LEAKAGE (nA)
T
J
= 150°C
V
GS
= 0 V
T
J
= 125°C