NTMFS4921NT1G

NTMFS4921N
http://onsemi.com
4
0
10
20
30
40
50
60
70
80
90
0123456
Figure 1. OnRegion Characteristics
V
DS
, DRAINTOSOURCE VOLTAGE (V)
I
D
, DRAIN CURRENT (A)
10 V
T
J
= 25°C
V
GS
= 4.5 V
5.0 V
4.0 V
3.8 V
3.6 V
3.4 V
3.2 V
3.0 V
2.8 V
2.6 V
0
10
20
30
40
50
60
70
80
90
100
0123456
I
D
, DRAIN CURRENT (A)
Figure 2. Transfer Characteristics
V
GS
, GATETOSOURCE VOLTAGE (V)
V
DS
10 V
T
J
= 25°C
T
J
= 125°C
T
J
= 55°C
0
0.01
0.02
0.03
0.04
246810
Figure 3. OnResistance vs. GatetoSource
Voltage
V
GS
, GATETOSOURCE VOLTAGE (V)
ID = 30 A
T
J
= 25°C
R
DS(on)
, DRAINTOSOURCE RESISTANCE (W)
0.002
0.0045
0.007
0.0095
0.012
0.0145
0.017
0.0195
30 40 50 60 70 80 90 100
Figure 4. OnResistance vs. Drain Current and
Gate Voltage
I
D
, DRAIN CURRENT (A)
R
DS(on)
, DRAINTOSOURCE RESISTANCE (W)
V
GS
= 4.5 V
V
GS
= 11.5 V
T
J
= 25°C
0.6
0.8
1
1.2
1.4
1.6
1.8
50 25 0 25 50 75 100 125 150
Figure 5. OnResistance Variation with
Temperature
T
J
, JUNCTION TEMPERATURE (°C)
R
DS(on)
, DRAINTOSOURCE
RESISTANCE (NORMALIZED)
ID = 30 A
V
GS
= 10 V
10
100
1000
10000
5 1015202530
Figure 6. DraintoSource Leakage Current
vs. Voltage
V
DS
, DRAINTOSOURCE VOLTAGE (V)
I
DSS
, LEAKAGE (nA)
T
J
= 150°C
V
GS
= 0 V
T
J
= 125°C
NTMFS4921N
http://onsemi.com
5
0
200
400
600
800
1000
1200
1400
1600
1800
2000
0 5 10 15 20 25 30
Figure 7. Capacitance Variation
GATETOSOURCE OR DRAINTOSOURCE VOLTAGE (V)
C, CAPACITANCE (pF)
T
J
= 25°C
C
oss
C
iss
C
rss
0
2
4
6
8
10
12
0 4 8 12162024
Figure 8. GatetoSource and
DraintoSource Voltage vs. Total Charge
Q
g
, TOTAL GATE CHARGE (nC)
V
GS
, GATETOSOURCE VOLTAGE (V)
ID = 30 A
T
J
= 25°C
QT
V
GS
Q
gd
Q
gs
1
10
100
1000
1 10 100
Figure 9. Resistive Switching Time Variation
vs. Gate Resistance
R
G
, GATE RESISTANCE (W)
t, TIME (ns)
V
DD
= 15 V
I
D
= 30 A
V
GS
= 11.5 V
t
f
t
r
t
d(off)
t
d(on)
0
5
10
15
20
25
30
0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1
Figure 10. Diode Forward Voltage vs. Current
V
SD
, SOURCETODRAIN VOLTAGE (V)
I
S
, SOURCE CURRENT (A)
V
GS
= 0 V
T
J
= 25°C
0.1
1
10
100
1000
0.1 1 10 100
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
V
DS
, DRAINTOSOURCE VOLTAGE (V)
I
D
, DRAIN CURRENT (A)
10 ms
100 ms
1 ms
10 ms
dc
V
GS
= 20 V
Single Pulse
T
C
= 25°C
R
DS(on)
Limit
Thermal Limit
Package Limit
0
10
20
30
40
50
60
70
80
90
100
25 50 75 100 125 150
Figure 12. Maximum Avalanche Energy vs.
Starting Junction Temperature
T
J
, STARTING JUNCTION TEMPERATURE(°C)
E
AS
, SINGLE PULSE DRAINTO
SOURCE AVALANCHE ENERGY (mJ)
I
D
= 24 A
NTMFS4921N
http://onsemi.com
6
0
10
20
30
40
50
60
70
80
90
0 102030405060708090
Figure 13. g
FS
vs. Drain Current
DRAIN CURRENT (A)
g
FS
(S)
V
DS
= 1.5 V
0.1
1
10
100
0.1 1 10 100 1000 10000
Figure 14. Avalanche Characteristics
PULSE WIDTH (ms)
I
d
(A)
125°C
100°C
25°C

NTMFS4921NT1G

Mfr. #:
Manufacturer:
ON Semiconductor
Description:
MOSFET N-CH 30V 8.8A SO8FL
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
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