Electrical characteristics TSV321-TSV358-TSV324
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2 Electrical characteristics
Table 3. Electrical characteristics at V
CC
= +3V, V
DD
= 0V, R
L
, C
L
connected to V
CC
/2,
and T
amb
= 25°C (unless otherwise specified)
Symbol Parameter Test conditions Min. Typ. Max. Unit
V
io
Input offset voltage
V
icm
= V
out
= V
CC
/2
TSV321/358/324
T
min
≤ T
amb
≤ T
max
TSV321A/358A/324A
T
min
≤ T
amb
≤ T
max
0.2
0.1
3
6
1
3
mV
ΔV
io
Input offset voltage drift 2 µV/°C
I
io
Input offset current
V
icm
= V
out
= V
CC
/2
(1)
T
min
≤ T
amb
≤ T
max
330
60
nA
I
ib
Input bias current
V
icm
= V
out
= V
CC
/2
(1)
T
min
≤ T
amb
≤ T
max
40 125
150
nA
CMR
Common mode rejection ratio
20 log (ΔV
ic
/ΔV
io
)
0 ≤ V
icm
≤ V
CC
, V
out
= V
CC
/2 60 80 dB
A
vd
Large signal voltage gain
V
out
= 0.5V to 2.5V
R
L
= 2kΩ
R
L
= 600Ω
80
74
92
95
dB
V
OH
High level output voltage
V
id
= 100mV
R
L
= 2kΩ
R
L
= 600Ω
T
min
≤ T
amb
≤ T
max,
R
L
= 2kΩ
T
min
≤ T
amb
≤ T
max,
R
L
= 600Ω
2.82
2.80
2.82
2.80
2.95
2.95
V
V
OL
Low level output voltage
V
id
= -100mV
R
L
= 2kΩ
R
L
= 600Ω
T
min
≤ T
amb
≤ T
max,
R
L
= 2kΩ
T
min
≤ T
amb
≤ T
max,
R
L
= 600Ω
88
115
120
160
120
160
mV
I
o
Output source current V
id
= 100mV, V
O
= V
DD
20 80
mA
Output sink current V
id
= -100mV, V
O
= V
CC
20 80
I
CC
Supply current (per amplifier)
A
VCL
= 1, no load
T
min
≤ T
amb
≤ T
max
420 650
690
µA
GBP Gain bandwidth product R
L
=10kΩ, C
L
= 100pF, f = 100kHz 1 1.3 MHz
SR Slew rate R
L
=10kΩ, C
L
= 100pF 0.42 0.6 V/µs
φm Phase margin C
L
= 100pF 53 Degrees
en Input voltage noise 27 nV/√Hz
THD Total harmonic distortion 0.01 %
1. Maximum values include unavoidable inaccuracies of the industrial tests.
