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Document Number: 65154
S10-1042-Rev. A, 03-May-10
Vishay Siliconix
Si4204DY
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
SPECIFICATIONS T
J
= 25 °C, unless otherwise noted
Parameter Symbol Test Conditions Min. Typ. Max. Unit
Static
Drain-Source Breakdown Voltage V
DS
V
GS
= 0 V, I
D
= 250 µA 20 V
V
DS
Temperature Coefficient ΔV
DS
/T
J
I
D
= 250 µA 20
mV/°C
V
GS(th)
Temperature Coefficient ΔV
GS(th)
/T
J
I
D
= 250 µA - 5.8
Gate Threshold Voltage V
GS(th)
V
DS
= V
GS
, I
D
= 250 µA 1.0 2.4 V
Gate-Body Leakage I
GSS
V
DS
= 0 V, V
GS
= ± 20 V 100 nA
Zero Gate Voltage Drain Current I
DSS
V
DS
= 20 V, V
GS
= 0 V 1
µA
V
DS
= 20 V, V
GS
= 0 V, T
J
= 55 °C 10
On-State Drain Current
b
I
D(on)
V
DS
= 5 V, V
GS
= 10 V 20 A
Drain-Source On-State Resistance
b
R
DS(on)
V
GS
= 10 V, I
D
= 10 A 0.0038 0.0046
Ω
V
GS
= 4.5 V, I
D
= 8 A 0.0047 0.0060
Forward Transconductance
b
g
fs
V
DS
= 15 V, I
D
= 10 A 50 S
Dynamic
a
Input Capacitance C
iss
V
DS
= 10 V, V
GS
= 0 V, I
D
= 1 MHz
2110
pFOutput Capacitance C
oss
926
Reverse Transfer Capacitance C
rss
235
Total Gate Charge Q
g
V
DS
= 10 V, V
GS
= 10 V, I
D
= 10 A 30 45
nC
V
DS
= 10 V, V
GS
= 4.5 V, I
D
= 10 A
14.5 22
Gate-Source Charge Q
gs
4.5
Gate-Drain Charge Q
gd
3.9
Gate Resistance R
g
f = 1 MHz 0.4 1.4 2.8 Ω
Tur n - O n D e l ay Time t
d(on)
V
DD
= 10 V, R
L
= 1 Ω
I
D
≅ 10 A, V
GEN
= 10 V, R
g
= 1 Ω
816
ns
Rise Time t
r
15 30
Turn-Off Delay Time t
d(off)
24 45
Fall Time t
f
918
Tur n - O n D e l ay Time t
d(on)
V
DD
= 10 V, R
L
= 1 Ω
I
D
≅ 10 A, V
GEN
= 4.5 V, R
g
= 1 Ω
18 35
Rise Time t
r
24 45
Turn-Off Delay Time t
d(off)
26 50
Fall Time t
f
13 26
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current I
S
T
C
= 25 °C 2.7
A
Pulse Diode Forward Current
a
I
SM
50
Body Diode Voltage V
SD
I
S
= 3 A 0.70 1.2 V
Body Diode Reverse Recovery Time t
rr
N-Channel
I
F
= 10 A, dI/dt = 100 A/µs, T
J
= 25 °C
20 40 ns
Body Diode Reverse Recovery Charge Q
rr
10 20 nC
Reverse Recovery Fall Time t
a
11
nS
Reverse Recovery Rise Time t
b
9
