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Document Number: 74470
S09-2550-Rev. E, 30-Nov-09
Vishay Siliconix
DG451, DG452, DG453
Notes:
a. V
IN
= input voltage to perform proper function.
b. Room = 25 °C, Full = as determined by the operating temperature suffix.
c. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing.
d. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this data sheet.
e. Guaranteed by design, not subject to production test.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
Parameter Symbol
Test Conditions
Unless Specified
V+ = 5 V, V- = - 5 V
V
L
= 5 V, V
IN
= 2.4 V, 0.8 V
a
Temp.
b
Typ.
c
- 40 °C to 125 °C - 40 °C to 85 °C
Unit Min.
d
Max.
d
Min.
d
Max.
d
Power Supplies
Power Supply Current I+
V
L
= 5 V, V
IN
= 0 or 5 V
Room
Full
0.001 - 0.5
- 5
- 0.5
- 5
µA
Negative Supply Current I-
Room
Full
- 0.001 - 0.5
- 5
- 0.5
- 5
Logic Supply Current
I
L
Room
Full
0.001 - 0.5
- 5
- 0.5
- 5
Ground Current
I
GND
Room
Full
- 0.001 - 0.5
- 5
- 0.5
- 5
SPECIFICATIONS FOR DUAL SUPPLIES
SPECIFICATIONS FOR UNIPOLAR SUPPLIES
Parameter Symbol
Test Conditions
Unless Specified
V+ = 12 V, V- = 0 V
V
L
= 5 V, V
IN
= 2.4 V, 0.8 V
a
Temp.
b
Typ.
c
- 40 °C to 125 °C - 40 °C to 85 °C
Unit Min.
d
Max.
d
Min.
d
Max.
d
Analog Switch
Analog Signal Range
e
V
ANALOG
Full 12 12 V
On-Resistance
R
ON
I
S
= - 10 mA, V
D
= 0 V to + 10 V
Room
Full
5.5 8.1
12.4
8.1
10.4
Ω
On-Resistance Match
ΔR
ON
I
S
= - 10 mA, V
D
= + 10 V
Room
Full
0.14 0.5
1
0.5
0.5
On-Resistance Flatness
R
FLATNESS
I
S
= - 10 mA,
V
D
= 0 V, + 5 V, + 10 V
Room
Full
0.94 1.5
1.7
1.5
1.5
Dynamic Characteristics
Tur n - O n T i m e
t
ON
R
L
= 300 Ω, C
L
= 35 pF
V
S
= 8 V, See Figure 2
Room
Full
132 162
238
162
210
ns
Turn-Off Time
t
OFF
Room
Full
61 91
117
91
105
Break-Before-Make
Time Delay
t
D
DG453 only, V
S
= 8 V
R
L
= 300 Ω, C
L
= 35 pF
Room 70
Charge Injection
e
Q
V
g
= 0 V, R
g
= 0 Ω, C
L
= 1 nF
Room 1 pC
Power Supplies
Power Supply Current I+
V
L
= 5 V, V
IN
= 0 or 5 V
Room
Full
0.001 0.5
5
0.5
5
µA
Negative Supply Current I-
Room
Full
- 0.001 - 0.5
- 5
- 0.5
- 5
Logic Supply Current
I
L
Room
Full
0.001 0.5
5
0.5
5
Ground Current
I
GND
Room
Full
- 0.001 - 0.5
- 5
- 0.5
- 5
Document Number: 74470
S09-2550-Rev. E, 30-Nov-09
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5
Vishay Siliconix
DG451, DG452, DG453
TYPICAL CHARACTERISTICS 25 °C, V
L
= 5 V, unless otherwise noted
On-Resistance vs. V
D
and Dual Supply Voltage
On-Resistance vs. V
D
and Temperature
Leakage Current vs. Temperature
1
2
3
4
5
6
7
8
- 20 - 15 - 10 - 5 0 5 10 15 20
V
COM
- Analog Voltage (V)
R
ON
- On-Resistance (Ω)
± 8 V
T
A
= + 25 °C
I
S
= 10 mA
± 5.0 V
± 10 V
± 15 V
± 13.5 V
± 20 V
± 12 V
V
COM
- Analog Voltage (V)
R
ON
- On-Resistance (Ω)
0
1
2
3
4
5
6
7
8
9
10
- 15 - 10 - 5 0 5 10 15
+ 125 °C
+ 85 °C
+ 25 °C
- 40 °C
V+ = + 15 V
V- = - 15 V
I
S
= 10 mA
1
10
100
1000
10 000
- 60 - 40 - 20 0 20 40 60 80 100 120 14
0
Temperature (°C)
Leakage Current (pA)
V+ = + 15 V
V- = - 15 V
I
D
(off)
I
D
(on)
I
S
(off)
On-Resistance vs. V
D
and Single Supply Voltage
On-Resistance vs. V
D
and Temperature
Leakage Current vs. Temperature
0
5
10
15
20
0 4 8 12162024283236
V
COM
- Analog Voltage (V)
R
ON
- On-Resistance (Ω)
T
A
= + 25 °C
I
S
= 10 mA
V+ = 10.8 V
V+ = 36 V
V+ = 12 V
V+ = 15 V
V+ = 20 V
V+ = 8 V
V+ = 5 V
V
D
- Analog Voltage (V)
R
ON
- On-Resistance (Ω)
2
3
4
5
6
7
8
9
10
11
12
024681012
+ 125 °C
+ 85 °C
+ 25 °C
- 40 °C
V+ = + 12 V
V- = 0 V
I
S
= 10 mA
1
10
100
1000
10 000
100 000
- 60 - 40 - 20 0 20 40 60 80 100 120 140
Temperature (°C)
Leakage Current (pA)
V+ = + 13.2 V
V- = 0 V
I
D
(off)
I
D
(on)
I
S
(off)
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Document Number: 74470
S09-2550-Rev. E, 30-Nov-09
Vishay Siliconix
DG451, DG452, DG453
TYPICAL CHARACTERISTICS 25 °C, V
L
= 5 V, unless otherwise noted
Charge Injection vs. Analog Voltage
Switching Time vs. Dual Supply Voltage
Switching Time vs. Single Supply Voltage
- 60
- 40
- 20
0
20
40
60
80
100
120
140
- 20 - 15 - 10 - 5 0 5 10 15 20
Analog Voltage (V)
Q - Charge Injection (pC)
C
L
=1 nF
Drain
V+ = + 15 V
V- = - 15 V
V+ = + 5 V
V- = - 5 V
V+ = + 12 V
V- = - 0 V
20
40
60
80
100
120
140
160
180
200
4 6 8 101214161820
Dual Supply Voltage (V)
t
ON
/t
OFF
(ns)
T = 25 °C
t
OFF
0
50
100
150
200
250
300
350
510152025303540
Single Supply Voltage (V)
t
ON
/t
OFF
(ns)
T = 25 °C
t
OFF
t
ON
Switching Time vs. Temperature and
Dual Supply Voltage
Switching Time vs. Temperature and
Single Supply Voltage
Switching Threshold vs. Supply Voltage
25
50
75
100
125
150
175
200
225
250
275
- 55 - 35 - 15 5 25 45 65 85 105 125
Temperature (°C)
t
ON
/t
OFF
(ns)
t
ON
V = ± 15 V
t
OFF
V = ± 5 V
t
OFF
V = ± 15 V
t
ON
V = ± 5 V
0
50
100
150
200
250
300
350
- 55 - 35 - 15 5 25 45 65 85 105 125
Temperature (°C)
t
ON
/t
OFF
(ns)
t
ON
V = + 12 V
t
OFF
V = + 12 V
0.0
0.5
1.0
1.5
2.0
2.5
3.0
0 5 10 15 20 25 30 35 40
Supply Voltage (V)
V
T
- Switching Threshold (V)
with V
L
= 5 V

DG451EY-T1-E3

Mfr. #:
Manufacturer:
Vishay / Siliconix
Description:
Analog Switch ICs Hi-Volt Quad SPST
Lifecycle:
New from this manufacturer.
Delivery:
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