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RSA30LDDTE25

P1-P3
Data Sheet
www.rohm.com
© 2011 ROHM Co., Ltd. All rights reserved.
ESD protection device (TVS)
RSA30L
Applications Dimensions (Unit : mm) Land size figure (Unit : mm)
For terminal protection device
Features
1) Small power mold type. (PMDS)
2) High reliability
Construction
Silicon epitaxial planar Structure
Taping specifications (Unit : mm)
Absolute maximum ratings (Ta=25°C)
Symbol Unit
Ppk W
V
RMN
V
Tj °C
Tstg °C
Electrical characteristics (Ta=25°C)
Symbol Min. Typ. Max. Unit Conditions
V
BR
28.5 - 31.5 V I
R
=1.0mA
V
C
- - 41.4 V I
pp
=14.4A
I
R
--5uA
V
RMN
=25.6V
Parameter Limits
Peak pulse (tp=10×1000us) 600
Stand off power 25.6
Junction temperature 150
Clamping voltage
Reverse current
Storage temperature
55 to 150
Parameter
Breakdown voltage
4.0±0.12.9±0.1
4.0±0.1
2.0±0.05
φ1.55±0.05
5.5±0.05
1.75±0.1
12±0.2
φ1.55
9.5±0.1
0.3
5.3±0.1
　 0.05
2.8MAX
PMDS
2.0
4.2
2.0
ROHM : PMDS
JEDEC : SOD-106
①
Manufacture Date
②
①
②
30
L
0.1±0.02
　　　 0.1
2.6±0.2
2.0±0.2
5.0±0.3
1.2±0.3
4.5±0.2
1.5±0.2
1/2 2011.05 - Rev.C
www.rohm.com
© 2011 ROHM Co., Ltd. All rights reserved.
Data Sheet
RSA30L
REVERSE VOLTAGE：VR(V)
VR-IR CHARACTERISTICS
REVERSE CURRENT:IR (nA)
REVERSE CURRENT:IR(nA)
IR DISRESION MAP
CAPACITANCE BETWEEN
TERMINALS:Ct(nF)
REVERSE VOLTAGE:VR(V)
VR-Ct CHARACTERISTICS
Ct DISRESION MAP
CAPACITANCE
BETWEENTERMINALS:Ct(nF)
ZENER CURRENT:Iz(mA)
ZENER VOLTAGE:Vz(V)
Vz-Iz CHARACTERISTICS
DYNAMIC IMPEDANCE:Zz(Ω)
ZENER CURRENT(mA)
Zz-Iz CHARACTERISTICS
Vz DISRESION MAP
ZENER VOLTAGE:Vz(Ｖ)
TIME:t(s)
Rth-t CHARACTERISTICS
TRANSIENT
THAERMAL IMPEDANCE:Rth (℃/W)
0.0001
0.001
0.01
0.1
1
10
100
1000
10000
0 5 10 15 20 25
Ta=25℃
Ta=-25℃
Ta=75℃
Ta=125℃Ta=150℃
0
0.02
0.04
0.06
0.08
0.1
0.12
0.14
0.16
0.18
0.2
Ta=25℃
VR=3.5V
n=30pcs
AVE:0.0143nA
0.1
1
10
0 5 10 15 20 25
f=1MHz
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1
AVE:0.884nF
Ta=25℃
f=1MHz
VR=0V
n=10pcs
0.001
0.01
0.1
1
10
25 26 27 28 29 30 31 32 33 34
Ta=75℃
Ta=-25℃
Ta=25℃
Ta=125℃
Ta=150℃
1
10
100
0.1 1 10
27
28
29
30
31
32
AVE:29.651V
Ta=25℃
IF=1mA
n=30pcs
0.1
1
10
100
1000
0.001 0.01 0.1 1 10 100 1000
Rth(j-a)
Rth(j-c)
1ms
IM=10mA IF=0.5A
300us
time
Mounted on epoxy board
0
5
10
15
20
25
30
No break at 30kV
C=100pF
R=1.5kΩ
C=200pF
R=0Ω
No break at 30kV
ELECTROSTATIC
DISCHARGE TEST ESD(KV)
ESD DISPERSION MAP
2/2 2011.05 - Rev.C
R1120A
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© 2011 ROHM Co., Ltd. All rights reserved.
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Notes
P1-P3

RSA30LDDTE25

Mfr. #:
Buy RSA30LDDTE25
Manufacturer:
Description:
TVS Diodes / ESD Suppressors Capacitive Sensor Switch Control ICs
Lifecycle:
New from this manufacturer.
Delivery:
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