ADG719SRJZ-EP-RL7

CMOS 1.8 V to 5.5 V, 2.5 Ω
2:1 Mux/SPDT Switch in SOT-23
ADG719-EP
Rev. 0
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FEATURES
1.8 V to 5.5 V single supply
4 Ω (max) on resistance
0.75 Ω (typ) on resistance flatness
−3 dB bandwidth > 200 MHz
Rail-to-rail operation
6-lead SOT-23 package
Fast switching times:
t
ON
= 12 ns
t
OFF
= 6 ns
Typical power consumption: (< 0.01 μW)
TTL/CMOS compatible
Military temperature range: −55°C to +125°C
APPLICATIONS
Battery-powered systems
Communication systems
Sample-and-hold systems
Audio signal routing
Video switching
Mechanical reed relay replacement
FUNCTIONAL BLOCK DIAGRAM
08842-001
IN
ADG719-EP
S2
S1
D
NOTES
1. SWITCHES SHOWN
FOR A LOGIC 1 INPUT.
Figure 1.
GENERAL DESCRIPTION
The ADG719-EP is a monolithic CMOS SPDT switch. This
switch is designed on a submicron process that provides low
power dissipation yet gives high switching speed, low on
resistance, and low leakage currents.
The ADG719-EP can operate from a single-supply range of 1.8 V
to 5.5 V, making it ideal for use in battery-powered instruments
and with the new generation of DACs and ADCs from Analog
Devices, Inc.
Each switch of the ADG719-EP conducts equally well in both
directions when on. The ADG719-EP exhibits break-before-
make switching action.
Because of the advanced submicron process, −3 dB bandwidths
of greater than 200 MHz can be achieved.
The ADG719-EP is available in a 6-lead SOT-23 package.
Full details about this enhanced product are available in the
ADG719 data sheet, which should be consulted in conjunction
with this data sheet.
PRODUCT HIGHLIGHTS
1. Supports defense and aerospace applications
(AQEC standard).
2. Military temperature range: −55°C to +125°C.
3. Controlled manufacturing baseline.
4. One assembly and test site.
5. One fabrication site.
6. Enhanced product change notification.
7. Qualification data available on request.
ADG719-EP
Rev. 0 | Page 2 of 12
TABLE OF CONTENTS
Features .............................................................................................. 1
Applications ....................................................................................... 1
Functional Block Diagram .............................................................. 1
General Description ......................................................................... 1
Product Highlights ........................................................................... 1
Revision History ............................................................................... 2
Specifications ..................................................................................... 3
Absolute Maximum Ratings ............................................................5
ESD Caution...................................................................................5
Pin Configuration and Function Descriptions ..............................6
Typical Performance Characteristics ..............................................7
Test Circuits ........................................................................................9
Outline Dimensions ....................................................................... 11
Ordering Guide .......................................................................... 11
REVISION HISTORY
4/10—Revision 0: Initial Version
ADG719-EP
Rev. 0 | Page 3 of 12
SPECIFICATIONS
V
DD
= 5 V ± 10%, GND = 0 V.
Table 1.
Parameter +2C −55°C to +125°C Unit Test Conditions/Comments
ANALOG SWITCH
Analog Signal Range 0 V to V
DD
V
On Resistance (R
ON
) 2.5 Ω typ V
S
= 0 V to V
DD
, I
S
= −10 mA;
4 7 Ω max see Figure 13
On Resistance Match Between
Channels (ΔR
ON
)
0.1 Ω typ V
S
= 0 V to V
DD
, I
S
= −10 mA
0.4 Ω max
On Resistance Flatness (R
FLAT(ON)
) 0.75 Ω typ V
S
= 0 V to V
DD
, I
S
= −10 mA
1.5 Ω max
LEAKAGE CURRENTS I
S
(Off) V
DD
= 5.5 V
Source Off Leakage ±0.01 nA typ V
S
= 4.5 V/1 V, V
D
= 1 V/4.5 V;
±0.25 1 nA max see Figure 14
Channel On Leakage I
D
, I
S
(On) ±0.01 nA typ V
S
= V
D
= 1 V or V
S
= V
D
= 4.5 V;
±0.25 5 nA max see Figure 15
DIGITAL INPUTS
Input High Voltage, V
INH
2.4 V min
Input Low Voltage, V
INL
0.8 V max
Input Current
I
INL
or I
INH
0.005 μA typ V
IN
= V
INL
or V
INH
±0.1 μA max
DYNAMIC CHARACTERISTICS
1
t
ON
7 ns typ R
L
= 300 Ω, C
L
= 35 pF
12 ns max V
S
= 3 V; see Figure 16
t
OFF
3 ns typ R
L
= 300 Ω, C
L
= 35 pF
6 ns max V
S
= 3 V; see Figure 16
Break-Before-Make Time Delay, t
D
8 ns typ R
L
= 300 Ω, C
L
= 35 pF,
1 ns min V
S1
= V
S2
= 3 V; see Figure 17
Off Isolation −67 dB typ R
L
= 50 Ω, C
L
= 5 pF, f = 10 MHz
−87 dB typ R
L
= 50 Ω, C
L
= 5 pF, f = 1 MHz;
see Figure 18
Channel-to-Channel Crosstalk −62 dB typ R
L
= 50 Ω, C
L
= 5 pF, f = 10 MHz
−82 dB typ R
L
= 50 Ω, C
L
= 5 pF, f = 1 MHz;
see Figure 19
Bandwidth −3 dB 200 MHz typ R
L
= 50 Ω, C
L
= 5 pF; see Figure 20
C
S
(Off) 7 pF typ
C
D
, C
S
(On) 27 pF typ
POWER REQUIREMENTS V
DD
= 5.5 V
Digital inputs = 0 V or 5.5 V
I
DD
0.001 μA typ
1.0 μA max
1
Guaranteed by design, not subject to production test.

ADG719SRJZ-EP-RL7

Mfr. #:
Manufacturer:
Analog Devices Inc.
Description:
Analog Switch ICs 2.5 Ohm 1.8V CMOS 2:1 Mux/SPDT
Lifecycle:
New from this manufacturer.
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