VSSAF3L45
www.vishay.com
Vishay General Semiconductor
Revision: 06-May-15
1
Document Number: 89935
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Surface Mount Trench MOS Barrier Schottky Rectifier
FEATURES
• Very low profile - typical height of 0.95 mm
• Ideal for automated placement
• Trench MOS Schottky technology
• Low power losses, high efficiency
• Low forward voltage drop
• Meets MSL level 1, per J-STD-020, LF maximum peak
of 260 °C
• AEC-Q101 qualified available
- Automotive ordering code; base P/NHM3
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
For use in low voltage, high frequency inverters,
freewheeling, DC/DC converters, and polarity protection in
commercial, industrial, and automotive applications.
MECHANICAL DATA
Case: DO-221AC (SlimSMA)
Molding compound meets UL 94 V-0 flammability rating
Base P/N-M3 - halogen-free, RoHS-compliant, and
commercial grade
Base P/NHM3 - halogen-free, RoHS-compliant, and
AEC-Q101 qualified
Base P/NHM3_X - halogen-free, RoHS-compliant, and
AEC-Q101 qualified
(“_X” denotes revision code e.g. A, B,.....)
Terminals: matte tin plated leads, solderable per
J-STD-002 and JESD22-B102
M3 and HM3 suffix meets JESD 201 class 2 whisker test
Polarity: color band denotes cathode end
Note
(1)
Free air, mounted on recommended copper pad area
PRIMARY CHARACTERISTICS
I
F(AV)
3.0 A
V
RRM
45 V
I
FSM
80 A
I
R
at V
R
= 45 V (125 °C) 5 mA
V
F
at I
F
= 3.0 A (125 °C) 0.37 V
T
J
max. 150 °C
Package DO-221AC (SlimSMA)
Diode variations Single die
DO-221AC
TMBS
®
SlimSMA
TM
Top View
Bottom View
MAXIMUM RATINGS (T
A
= 25 °C unless otherwise noted)
PARAMETER SYMBOL VSSAF3L45 UNIT
Device marking code 3L45
Maximum repetitive peak reverse voltage V
RRM
45 V
Maximum DC forward rectified current I
F(AV)
(1)
3.0 A
Peak forward surge current 10 ms single half sine-wave
superimposed on rated load
I
FSM
80 A
Operating junction and storage temperature range T
J
, T
STG
-40 to +150 °C