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TK65G10N1,RQ

P1-P3P4-P6P7-P9
TK65G10N1
4
6.4.
6.4.
6.4.
6.4. Source-Drain Characteristics (T
Source-Drain Characteristics (T
Source-Drain Characteristics (T
Source-Drain Characteristics (T
a
a
a
a
= 25
= 25
= 25
= 25
unless otherwise specified)
unless otherwise specified)
unless otherwise specified)
unless otherwise specified)
Characteristics
Reverse drain current (DC)
Reverse drain current (pulsed)
Diode forward voltage
Reverse recovery time
Reverse recovery charge
(Note 6)
(Note 6)
(Note 7)
(Note 7)
Symbol
I
DR
I
DRP
V
DSF
t
rr
Q
rr
Test Condition
I
DR
= 65 A, V
GS
= 0 V
I
DR
= 65 A, V
GS
= 0 V
-dI
DR
/dt = 100 A/µs
Min
Typ.
76
152
Max
65
283
-1.2
Unit
A
V
ns
nC
Note 6: Ensure that the channel temperature does not exceed 150.
Note 7: Ensure that V
DS
peak does not exceed V
DSS
.
7.
7.
7.
7. Marking
Marking
Marking
Marking
Fig.
Fig.
Fig.
Fig. 7.1
7.1
7.1
7.1 Marking
Marking
Marking
Marking
2014-06-30
Rev.4.0
TK65G10N1
5
8.
8.
8.
8. Characteristics Curves (Note)
Characteristics Curves (Note)
Characteristics Curves (Note)
Characteristics Curves (Note)
Fig.
Fig.
Fig.
Fig. 8.1
8.1
8.1
8.1 I
I
I
I
D
D
D
D
- V
- V
- V
- V
DS
DS
DS
DS
Fig.
Fig.
Fig.
Fig. 8.2
8.2
8.2
8.2 I
I
I
I
D
D
D
D
- V
- V
- V
- V
DS
DS
DS
DS
Fig.
Fig.
Fig.
Fig. 8.3
8.3
8.3
8.3 I
I
I
I
D
D
D
D
- V
- V
- V
- V
GS
GS
GS
GS
Fig.
Fig.
Fig.
Fig. 8.4
8.4
8.4
8.4 V
V
V
V
DS
DS
DS
DS
- V
- V
- V
- V
GS
GS
GS
GS
Fig.
Fig.
Fig.
Fig. 8.5
8.5
8.5
8.5 R
R
R
R
DS(ON)
DS(ON)
DS(ON)
DS(ON)
- I
- I
- I
- I
D
D
D
D
Fig.
Fig.
Fig.
Fig. 8.6
8.6
8.6
8.6 R
R
R
R
DS(ON)
DS(ON)
DS(ON)
DS(ON)
- T
- T
- T
- T
a
a
a
a
2014-06-30
Rev.4.0
TK65G10N1
6
Fig.
Fig.
Fig.
Fig. 8.7
8.7
8.7
8.7 I
I
I
I
DR
DR
DR
DR
- V
- V
- V
- V
DS
DS
DS
DS
Fig.
Fig.
Fig.
Fig. 8.8
8.8
8.8
8.8 Capacitance - V
Capacitance - V
Capacitance - V
Capacitance - V
DS
DS
DS
DS
Fig.
Fig.
Fig.
Fig. 8.9
8.9
8.9
8.9 V
V
V
V
th
th
th
th
- T
- T
- T
- T
a
a
a
a
Fig.
Fig.
Fig.
Fig. 8.10
8.10
8.10
8.10 Dynamic Input/Output Characteristics
Dynamic Input/Output Characteristics
Dynamic Input/Output Characteristics
Dynamic Input/Output Characteristics
Fig.
Fig.
Fig.
Fig. 8.11
8.11
8.11
8.11 P
P
P
P
D
D
D
D
- T
- T
- T
- T
c
c
c
c
(Guaranteed Maximum)
(Guaranteed Maximum)
(Guaranteed Maximum)
(Guaranteed Maximum)
2014-06-30
Rev.4.0
P1-P3P4-P6P7-P9

TK65G10N1,RQ

Mfr. #:
Buy TK65G10N1,RQ
Manufacturer:
Toshiba
Description:
MOSFET UMOSVIII 100V 4.5m max(VGS=10V) D2PAK
Lifecycle:
New from this manufacturer.
Delivery:
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