DRAM Operating Conditions
Recommended AC operating conditions are given in the DDR4 component data sheets.
Component specifications are available at micron.com. Module speed grades correlate
with component speed grades, as shown below.
Table 12: Module and Component Speed Grades
DDR4 components may exceed the listed module speed grades; module may not be available in all listed speed grades
Module Speed Grade Component Speed Grade
-2G6 -075
-2G4 -083E
-2G3 -083
-2G1 -093E
-1G9 -107E
Design Considerations
Simulations
Micron memory modules are designed to optimize signal integrity through carefully de-
signed terminations, controlled board impedances, routing topologies, trace length
matching, and decoupling. However, good signal integrity starts at the system level. Mi-
cron encourages designers to simulate the signal characteristics of the system's memo-
ry bus to ensure adequate signal integrity of the entire memory system.
Power
Operating voltages are specified at the edge connector of the module, not at the DRAM.
Designers must account for any system voltage drops at anticipated power levels to en-
sure the required supply voltage is maintained.
8GB (x72, ECC, DR) 288-Pin DDR4 UDIMM
DRAM Operating Conditions
PDF: 09005aef84f8c394
asf18c1gx72az.pdf – Rev. F 12/15 EN
16
Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2013 Micron Technology, Inc. All rights reserved.
I
DD
Specifications
Table 13: DDR4 I
DD
Specifications and Conditions – 8GB (Die Revision B)
Values are for the MT40A512M8 DDR4 SDRAM only and are computed from values specified in the 4Gb (512 Meg x 8) com-
ponent data sheet
Parameter Symbol 2666 2400 2133 Units
One bank ACTIVATE-PRECHARGE current I
DD0
1
891 801 738 mA
One bank ACTIVATE-PRECHARGE, Word Line Boost, IPP current I
PP0
1
54 54 54 mA
One bank ACTIVATE-READ-PRECHARGE current I
DD1
1
936 846 783 mA
Precharge standby current I
DD2N
2
900 810 756 mA
Precharge standby ODT current I
DD2NT
1
801 711 693 mA
Precharge power-down current I
DD2P
2
612 522 486 mA
Precharge quite standby current I
DD2Q
2
720 666 630 mA
Active standby current I
DD3N
2
1170 1080 990 mA
Active standby I
PP
current I
PP3N
2
54 54 54 mA
Active power-down current I
DD3P
2
720 720 720 mA
Burst read current I
DD4R
1
1836 1566 1458 mA
Burst write current I
DD4W
1
2061 1836 1638 mA
Burst refresh current (1x REF) I
DD5B
1
1881 1836 1773 mA
Burst refresh I
PP
current (1x REF) I
PP5B
1
225 225 225 mA
Self refresh current: Normal temp range (0–85°C) I
DD6N
2
324 324 324 mA
Self refresh current: Extended temp range (0–95°C) I
DD6E
2
432 432 432 mA
Self refresh current: Reduced temp range (0–45°C) I
DD6R
2
216 216 216 mA
Auto self refresh current (25°C) I
DD6A
2
162 162 162 mA
Auto self refresh current (45°C) I
DD6A
2
216 216 216 mA
Auto self refresh current (75°C) I
DD6A
2
324 324 324 mA
Bank interleave read current I
DD7
1
2106 1971 1728 mA
Bank interleave read IPP current I
PP7
1
171 153 135 mA
Maximum Power Down Current I
DD8
2
288 288 288 mA
Notes:
1. One module rank in the active I
DD/PP
, the other rank in I
DD2P/PP3N
.
2. All ranks in this I
DD/PP
condition.
8GB (x72, ECC, DR) 288-Pin DDR4 UDIMM
I
DD
Specifications
PDF: 09005aef84f8c394
asf18c1gx72az.pdf – Rev. F 12/15 EN
17
Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2013 Micron Technology, Inc. All rights reserved.
Temperature Sensor With SPD EEPROM
The temperature sensor continuously monitors the module's temperature and can be
read back at any time over the I
2
C bus shared with the serial presence-detect (SPD) EE-
PROM. Refer to JEDEC JC-42.4 EE1004 and TSE2004 device specifications for complete
details.
SPD Data
For the latest SPD data, refer to Micron's SPD page: micron.com/SPD.
Table 14: Temperature Sensor With SPD EEPROM Operating Conditions
Parameter/Condition Symbol Min Nom Max Units
Supply voltage V
DDSPD
2.5 V
Input low voltage: logic 0; all inputs V
IL
–0.5 V
DDSPD
× 0.3 V
Input high voltage: logic 1; all inputs V
IH
V
DDSPD
× 0.7 V
DDSPD
+ 0.5 V
Output low voltage: 3mA sink current V
DDSPD
> 2V V
OL
0.4 V
Input leakage current: (SCL, SDA) V
IN
= V
DDSPD
or V
SSSPD
I
LI
±5 µA
Output leakage current: V
OUT
= V
DDSPD
or V
SSSPD
, SDA in High-Z I
LO
±5 µA
Table 15: Temperature Sensor and EEPROM Serial Interface Timing
Parameter/Condition Symbol Min Max Units
Clock frequency
f
SCL 10 1000 kHz
Clock pulse width HIGH time
t
HIGH 260 ns
Clock pulse width LOW time
t
LOW 500 ns
Detect clock LOW timeout
t
TIMEOUT 25 35 ms
SDA rise time
t
R 120 ns
SDA fall time
t
F 120 ns
Data-in setup time
t
SU:DAT 50 ns
Data-in hold time
t
HD:DI 0 ns
Data out hold time
t
HD:DAT 0 350 ns
Start condition setup time
t
SU:STA 260 ns
Start condition hold time
t
HD:STA 260 ns
Stop condition setup time
t
SU:STO 260 ns
Time the bus must be free before a new transi-
tion can start
t
BUF 500 ns
Write time
t
W 5 ms
Warm power cycle time off
t
POFF 1 ms
Time from power-on to first command
t
INIT 10 ms
8GB (x72, ECC, DR) 288-Pin DDR4 UDIMM
Temperature Sensor With SPD EEPROM
PDF: 09005aef84f8c394
asf18c1gx72az.pdf – Rev. F 12/15 EN
18
Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2013 Micron Technology, Inc. All rights reserved.

MTA18ASF1G72AZ-2G1A1

Mfr. #:
Manufacturer:
Micron
Description:
IC SDRAM DDR4 1GX72 1.2V EUDIMM
Lifecycle:
New from this manufacturer.
Delivery:
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Payment:
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