FCX493TA Datasheet FCX493TA | P1-P3

FCX493

Datasheet Number: DS33056 Rev. 6 - 2

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100V NPN SILICON PLANAR MEDIUM POWER TRANSISTOR IN SOT89

Features

• BV

CEO

> 100V

• I

C

= 1A high Continuous Current

• Low saturation voltage V

CE(sat)

< 300mV @ 250mA

• Complementary PNP type: FCX593

• Totally Lead-Free & Fully RoHS compliant (Notes 1 & 2)

• Halogen and Antimony Free. “Green” Device (Note 3)

• Qualified to AEC-Q101 Standards for High Reliability

Application

• Load management functions

• Solenoid, relay and actuator drivers

• DC – DC modules

Mechanical Data

• Case: SOT89

• Case Material: Molded Plastic, “Green” Molding Compound

• Moisture Sensitivity: Level 1 per J-STD-020

• UL Flammability Rating 94V-0

• Terminals: Matte Tin Finish, Solderable per MIL-STD-202,

Method 208

• Weight: 0.052 grams (Approximate)

Ordering Information (Note 4)

Product Marking Reel size (inches) Tape width (mm) Quantity per reel

FCX493TA N93 7 12 1000

FCX493-13R N93 13 12 4000

Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.

2. See http://www.diodes.com for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free.

3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and

<1000ppm antimony compounds.

4. For packaging details, go to our website at http://www.diodes.com.

Marking Information

Top View

SOT89

Device symbol Top View

Pin-Out

N93 = Product Type Marking Code

C

E

B

C

E

C

B

N93

FCX493

Datasheet Number: DS33056 Rev. 6 - 2

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Maximum Ratings (@T

A

= +25°C, unless otherwise specified.)

Characteristic Symbol Value Unit

Collector-Base Voltage

V

CBO

120 V

Collector-Emitter Voltage

V

CEO

100 V

Emitter-Base Voltage

V

EBO

7 V

Continuous Collector Current

I

C

1 A

Peak Pulse Current

I

CM

2 A

Continuous Base Current

I

B

200 mA

Thermal Characteristics (@T

A

= +25°C, unless otherwise specified.)

Characteristic Symbol Value Unit

Collector Power Dissipation (Note 5)

P

D

1 W

Thermal Resistance, Junction to Ambient Air (Note 5)

R

θJA

125

°C/W

Thermal Resistance, Junction to Leads (Note 6)

R

θJL

10.01

°C/W

Operating and Storage Temperature Range

T

J,

T

STG

-65 to +150

°C

Notes: 5. For the device mounted on 15mm x 15mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions.

6. Thermal resistance from junction to solder-point (on the exposed collector pad).

Thermal Characteristics and Derating Information

100m 1 10 100

10m

100m

1

Single Pulse. T

amb

=25°C

V

CE(sat)

Limited

100µs

1ms

10ms

100ms

1s

DC

Safe Operating Area

I

C

Collector Current (A)

V

CE

Collector-Emitter Voltage (V)

0 20 40 60 80 100 120 140 160

0.0

0.2

0.4

0.6

0.8

1.0

Derating Curve

Temperature (°C)

Max Power Dissipation (W)

100µ 1m 10m 100m 1 10 100 1k

0

20

40

60

80

100

120

Transient Thermal Impedance

D=0.5

D=0.2

D=0.1

Single Pulse

D=0.05

Thermal Resistance (°C/W)

Pulse Width (s)

100µ 1m 10m 100m 1 10 100 1k

1

10

100

Single Pulse. T

amb

=25°C

Pulse Power Dissipation

Pulse Width (s)

Max Power Dissipation (W)

FCX493

Datasheet Number: DS33056 Rev. 6 - 2

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Electrical Characteristics (@T

A

= +25°C, unless otherwise specified.)

Characteristic Symbol Min Typ. Max Unit Test Condition

Collector-Base Breakdown Voltage

BV

CBO

120 - - V

I

C

= 100µA

Collector-Emitter Breakdown Voltage (Note 7)

BV

CEO

100 - - V

I

C

= 1mA

Emitter-Base Breakdown Voltage

BV

EBO

7 - - V

I

E

= 100µA

Collector Cutoff Current

I

CBO

- - 100 nA

V

CB

= 100V

Emitter Cutoff Current

I

EBO

- - 100 nA

V

EB

= 5V

Emitter Cutoff Current

I

CES

- - 100 nA

V

CES

= 100V

DC current transfer Static ratio (Note 7)

h

FE

100

60

20

-

300

-

I

C

= 1mA, V

CE

= 10V

I

C

= 250mA, V

CE

= 10V

I

C

= 500mA, V

CE

= 10V

I

C

= 1A, V

CE

= 10V

Collector-Emitter Saturation Voltage (Note 7)

V

CE(sat)

-

0.3

0.6

V

I

C

= 500mA, I

B

= 50mA

I

C

= 1A, I

B

= 100mA

Base-Emitter Saturation Voltage (Note 7)

V

BE

(

sat

)

- - 1.15 V

I

C

= 1A, I

B

= 100mA

Base-Emitter Turn-on Voltage (Note 7)

V

BE

(

on

)

- - 1.0 V

I

C

= 1A, V

CE

= 10V

Transitional Frequency

f

T

150 - - MHz

I

C

= 50mA, V

CE

= 10V

f = 100MHz

Output capacitance

C

obo

- - 10 pF

V

CB

= 10V, f = 1MHz,

Notes: 7. Measured under pulsed conditions. Pulse width ≤ 300μs. Duty cycle ≤ 2%.

FCX493TA

FCX493TA

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