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HFA08TB60STRL

P1-P3P4-P6
Document Number: 93045 For technical questions, contact: diodes-tech@vishay.com
www.vishay.com
Revision: 22-Oct-08 1
HEXFRED
®
Ultrafast Soft Recovery Diode, 8 A
HFA08TB60S
Vishay High Power Products
FEATURES
• Ultrafast recovery
• Ultrasoft recovery
• Very low I
RRM
• Very low Q
rr
• Specified at operating conditions
• Designed and qualified for industrial level
BENEFITS
• Reduced RFI and EMI
• Reduced power loss in diode and switching transistor
• Higher frequency operation
• Reduced snubbing
• Reduced parts count
DESCRIPTION
HFA08TB60S is a state of the art ultrafast recovery diode.
Employing the latest in epitaxial construction and advanced
processing techniques it features a superb combination of
characteristics which result in performance which is
unsurpassed by any rectifier previously available. With basic
ratings of 600 V and 8 A continuous current, the
HFA08TB60S is especially well suited for use as the
companion diode for IGBTs and MOSFETs. In addition to
ultrafast recovery time, the HEXFRED
®
product line features
extremely low values of peak recovery current (I
RRM
) and
does not exhibit any tendency to “snap-off” during the t
b
portion of recovery. The HEXFRED features combine to offer
designers a rectifier with lower noise and significantly lower
switching losses in both the diode and the switching
transistor. These HEXFRED advantages can help to
significantly reduce snubbing, component count and
heatsink sizes. The HEXFRED HFA08TB60S is ideally
suited for applications in power supplies (PFC boost diode)
and power conversion systems (such as inverters), motor
drives, and many other similar applications where high
speed, high efficiency is needed.
PRODUCT SUMMARY
V
R
600 V
V
F
at 8 A at 25 °C 1.7 V
I
F(AV)
8 A
t
rr
(typical) 18 ns
T
J
(maximum) 150 °C
Q
rr
(typical) 65 nC
dI
(rec)M
/dt (typical) 240 A/µs
I
RRM
5.0 A
D
2
PAK
N/C
Base
cathode
Anode
1
3
2
+
-
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Cathode to anode voltage V
R
600 V
Maximum continuous forward current I
F
T
C
= 100 °C 8.0
ASingle pulse forward current I
FSM
60
Maximum repetitive forward current I
FRM
24
Maximum power dissipation P
D
T
C
= 25 °C 36
W
T
C
= 100 °C 14
Operating junction and storage temperature range T
J
, T
Stg
- 55 to + 150 °C
www.vishay.com For technical questions, contact: diodes-tech@vishay.com
Document Number: 93045
2 Revision: 22-Oct-08
HFA08TB60S
Vishay High Power Products
HEXFRED
®
Ultrafast Soft Recovery Diode, 8 A
ELECTRICAL SPECIFICATIONS (T
J
= 25 °C unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Cathode to anode
breakdown voltage
V
BR
I
R
= 100 µA 600 - -
V
Maximum forward voltage V
FM
I
F
= 8.0 A
See fig. 1
-1.41.7
I
F
= 16 A - 1.7 2.1
I
F
= 8.0 A, T
J
= 125 °C - 1.4 1.7
Maximum reverse
leakage current
I
RM
V
R
= V
R
rated
T
J
= 125 °C, V
R
= 0.8 x V
R
rated
See fig. 2
-0.35.0
µA
- 100 500
Junction capacitance C
T
V
R
= 200 V See fig. 3 - 10 25 pF
Series inductance L
S
Measured lead to lead 5 mm from package body - 8.0 - nH
DYNAMIC RECOVERY CHARACTERISTICS (T
J
= 25 °C unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Reverse recovery time
See fig. 5, 6
t
rr
I
F
= 1.0 A, dI
F
/dt = 200 A/µs, V
R
= 30 V - 18 -
nst
rr1
T
J
= 25 °C
I
F
= 8.0 A
dI
F
/dt = 200 A/µs
V
R
= 200 V
-3755
t
rr2
T
J
= 125 °C - 55 90
Peak recovery current
I
RRM1
T
J
= 25 °C - 3.5 5.0
A
I
RRM2
T
J
= 125 °C - 4.5 8.0
Reverse recovery charge
See fig. 7
Q
rr1
T
J
= 25 °C - 65 138
nC
Q
rr2
T
J
= 125 °C - 124 360
Peak rate of fall of
recovery current during t
b
See fig. 8
dI
(rec)M
/dt1 T
J
= 25 °C - 240 -
A/µs
dI
(rec)M
/dt2 T
J
= 125 °C - 210 -
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Lead temperature T
lead
0.063" from case (1.6 mm) for 10 s - - 300 °C
Thermal resistance,
junction to case
R
thJC
--3.5
K/W
Thermal resistance,
junction to ambient
R
thJA
Typical socket mount - - 80
Weight
-2.0- g
-0.07- oz.
Marking device Case style D
2
PAK HFA08TB60S
Document Number: 93045 For technical questions, contact: diodes-tech@vishay.com
www.vishay.com
Revision: 22-Oct-08 3
HFA08TB60S
HEXFRED
®
Ultrafast Soft Recovery Diode, 8 A
Vishay High Power Products
Fig. 1 - Maximum Forward Voltage Drop vs.
Instantaneous Forward Current
Fig. 2 - Typical Reverse Current vs. Reverse Voltage
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage
Fig. 4 - Maximum Thermal Impedance Z
thJC
Characteristics
1
10
0.4 3.20.8 1.2
V
FM
- Forward Voltage Drop (V)
I
F
- Instantaneous Forward Current (A)
100
2.0 2.8
0.1
2.41.6
T
J
= 150 °C
T
J
= 125 °C
T
J
= 25 °C
0.01
0.1
1
10
100
0
V
R
- Reverse Voltage (V)
I
R
- Reverse Current (µA)
T
J
= 125 °C
T
J
= 25 °C
1000
100 600500
300
0.001
T
J
= 150 °C
400200
10
100
1 10 100 1000
1
V
R
- Reverse Voltage (V)
C
T
- Junction Capacitance (pF)
T
J
= 25 °C
0.01
0.1
1
0.00001 0.0001 0.001 0.01 0.1
1
t
1
- Rectangular Pulse Duration (s)
Z
thJC
- Thermal Response
Single pulse
(thermal response)
P
DM
t
1
t
2
Notes:
1. Duty factor D = t
1
/t
2
2. Peak T
J
= P
DM
x Z
thJC
+ T
C
10
D = 0.50
D = 0.20
D = 0.10
D = 0.05
D = 0.02
D = 0.01
P1-P3P4-P6

HFA08TB60STRL

Mfr. #:
Buy HFA08TB60STRL
Manufacturer:
Vishay Semiconductors
Description:
Rectifiers RECOMMENDED ALT 78-VS-HFA08TB60SL-M3
Lifecycle:
New from this manufacturer.
Delivery:
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