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ALD212908APAL

P1-P3P4-P6P7-P9P10-P12
ALD212908A/ALD212908 Advanced Linear Devices 7 of 12
TYPICAL PERFORMANCE CHARACTERISTICS (cont.)
OUTPUT CHARACTERISTICS
DRAIN SOURCE ON VOLTAGE - V
DS(ON)
(V)
100
80
60
40
20
0
DRAIN SOURCE ON CURRENT
I
DS(ON)
(mA)
543210
V
GS
= V
GS(th)
+ 3V
+125°C
+70°C
-55°C
+25°C
0°C
ZERO TEMPERATURE COEFFICIENT (ZTC)
GATE SOURCE OVERDRIVE VOLTAGE
V
GS
- V
GS(th)
(V)
1000
600
0
+0.3 +0.5
0
+0.4
+0.2+0.1
DRAIN SOURCE ON CURRENT
I
DS(ON)
(µA)
800
400
200
+125°C
- 55°C
+25°C
V
DS
= + 0.1V
Zero Temperature
Coefficient (ZTC)
GATE SOURCE OVERDRIVE VOLTAGE
vs. DRAIN SOURCE ON CURRENT
0 10 20
30 40 706050
DRAIN SOURCE ON CURRENT - I
DS(ON)
(mA)
GATE SOURCE OVERDRIVE VOLTAGE
V
GS-
V
GS(th)
(V)
4
3
2
5
1
0
+125°C
+25°C
+70°C
-55°C
0°C
V+ = V
DS
= + 5V
GATE THRESHOLD VOLTAGE vs.
AMBIENT TEMPERATURE
2.0
0
GATE THRESHOLD VOLTAGE
V
GS(th)
(V)
AMBIENT TEMPERATURE - T
A
(°C)
-50
-25
0 +25 +50
+125
+100+75
-1.0
-2.0
1.0
V
DS
= + 0.1V
I
D
= 20µA
V
GS(th)
= 0.8V
V
GS(th)
= 0.0V
V
GS(th)
= -1.4V
DRAIN SOURCE ON CURRENT vs.
GATE SOURCE OVERDRIVE VOLTAGE
100
80
60
40
20
0
543210
DRAIN SOURCE ON CURRENT
I
DS(ON)
(mA)
GATE SOURCE OVERDRIVE VOLTAGE
V
GS
- V
GS(th)
(V)
V
DS
= + 1.0V
-55°C
+25°C
+70°C
+125°C
0°C
5
4
3
2
1
0
1086420
GATE SOURCE OVERDRIVE VOLTAGE
vs. DRAIN SOURCE ON CURRENT
GATE SOURCE OVERDRIVE VOLTAGE
V
GS-
V
GS(th)
(V)
DRAIN SOURCE ON CURRENT - I
DS(ON)
(mA)
V
DS
= + 0.1V
+25°C
- 55°C
0°C
+125°C
+70°C
ALD212908A/ALD212908 Advanced Linear Devices 8 of 12
TYPICAL PERFORMANCE CHARACTERISTICS (cont.)
OFFSET VOLTAGE vs.
AMBIENT TEMPERATURE
+10
+8
+6
+4
+2
-2
0
-10
OFFSET VOLTAGE
V
OS
(mV)
-50 -25 0 +25 +50 +125+100+75
AMBIENT TEMPERATURE - T
A
(°C)
-8
-6
-4
REPRESENTATIVE UNITS
V
OS
= V
GS(th)
M1 - V
GS(th)
M2
DRAIN OFF LEAKAGE CURRENT I
DS(OFF)
vs. AMBIENT TEMPERATURE
AMBIENT TEMPERATURE - T
A
(°C)
-50
-25
0
+25 +50 +125+100+75
500
400
DRAIN OFF LEAKAGE CURRENT
I
DS(OFF)
(pA)
300
200
600
100
0
I
DS(OFF)
ALD212908A/ALD212908 Advanced Linear Devices 9 of 12
DIFFERENTIAL AMPLIFIER
CURRENT SOURCE MULTIPLICATION
CURRENT SOURCE MIRROR
CURRENT SOURCE WITH GATE CONTROL
TYPICAL APPLICATIONS
I
SET
R
SET
M
3
V
+
= +5V
I
SOURCE
M
1
, M
2
: N - Channel MOSFET
M
3
, M
4
: P - Channel MOSFET
M
1
M
2
V
+
= +5V
M
4
M3, M4:
ALD1102,
ALD1117,
1/2 ALD1103,
1/2 ALD1105,
1/2 ALD1107, or
1/2 ALD3107xx
M1, M2:
ALD1101,
ALD1116,
ALD1109xx,
ALD2129xx,
1/2 ALD1103,
1/2 ALD1105,
1/2 ALD1106,
1/2 ALD1108xx, or
1/2 ALD2108xx
R
SOURCE
I
SOURCE
= I
SET
=
V
+
- Vt
R
SET
where Vt = V
GS
- V
GS(th)
= V
DS
V
+
= +5V
I
SOURCE
R
SET
M
3
I
SET
ON
OFF
Digital Logic Control
of Current Source
M
1
: N - Channel MOSFET
M
3,
M
4
: P - Channel MOSFET
M
4
M
1
R
SOURCE
M1:
1/2 ALD1101,
1/2 ALD1116,
1/2 ALD1109xx,
1/2 ALD2129xx,
1/4 ALD1103,
1/4 ALD1105,
1/4 ALD1106,
1/4 ALD1108xx, or
1/4 ALD2108xx
M3, M4:
ALD1102,
ALD1117,
1/2 ALD1103,
1/2 ALD1105,
1/2 ALD1107, or
1/2 ALD3107xx
V
+
PMOS PAIR
M
4
V
OUT
V
IN
-
NMOS PAIR
M
2
M
1
V
IN
+
Current
Source
M
3
M
1
, M
2
: N - Channel MOSFET
M
3
, M
4
: P - Channel MOSFET
M3, M4:
ALD1102,
ALD1117,
1/2 ALD1103,
1/2 ALD1105,
1/2 ALD1107, or
1/2 ALD3107xx
M1, M2:
ALD1101,
ALD1116,
ALD1109xx,
ALD2129xx,
1/2 ALD1103,
1/2 ALD1105,
1/2 ALD1106,
1/2 ALD1108xx, or
1/2 ALD2108xx
P1-P3P4-P6P7-P9P10-P12

ALD212908APAL

Mfr. #:
Buy ALD212908APAL
Manufacturer:
Advanced Linear Devices
Description:
MOSFET Dual N-Ch Matched Pr VGS=0.0V
Lifecycle:
New from this manufacturer.
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