NZF220DFT1G

© Semiconductor Components Industries, LLC, 2011
November, 2011 Rev. 9
1 Publication Order Number:
NZF220DFT1/D
NZF220DFT1G,
SNZF220DFT1G
EMI Filter with ESD
Protection
Features
2 EMI/RFI Bidirectional “Pi” LowPass Filters
ESD Protection Meets IEC6100042
Diode Capacitance: 7 10 pF
Zener/Resistor Line Capacitance: 22 ±20% pF
Low Zener Diode Leakage: 1 mA Maximum
Zener Breakdown Voltage; 6 8 V
AECQ101 Qualified and PPAP Capable SNZF220DFT1G
S Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements
These are PbFree Devices
Benefits
Designed to suppress EMI/RFI Noise in Systems Subjected to
Electromagnetic Interference
Nominal Cutoff Frequency of 220 MHz (per Figure 2)
Small Package Size Minimizes Parasitic Inductance, Thus a More
“Ideal” Low Pass Filtering Response
Typical Applications
Cellular Phones
Communication Systems
Computers
Portable Products with Input/Output Conductors
MAXIMUM RATINGS
Rating Symbol Value Unit
Peak Power Dissipation (Note 1)
8
× 20 ms Pulse
P
PK
14 W
Maximum Junction Temperature T
J
150 °C
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1. Between I/O Pins
SC88A
DF SUFFIX
CASE 419A
Device Package Shipping
ORDERING INFORMATION
CIRCUIT DESCRIPTION
MARKING DIAGRAM
4
132
5
Pin 4 Pin 5
Pin 3 Pin 1Pin 2
(GND)
http://onsemi.com
NZF220DFT1G SC88A
(PbFree)
3000 / Tape &
Reel
For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
FA D
G
FA = Specific Device Code
D = Date Code
G = PbFree Package
SNZF220DFT1G SC88A
(PbFree)
3000 / Tape &
Reel
NZF220DFT1G, SNZF220DFT1G
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS
Symbol Characteristic Min Typ Max Unit
V
Z
Zener Breakdown Voltage, @ I
ZT
= 1 mA 6.0 8.0 V
I
r
Zener Leakage Current, @ V
R
= 3 V N/A 1.0
mA
V
F
Zener Forward Voltage, @ I
F
= 50 mA N/A 1.5 V
Capacitance Zener Internal Capacitance, @ 0 V Bias 7.0 10 pF
Capacitance Zener/Resistor Array Line Capacitance 17.6 26.4 pF
Resistor Resistance 90 110
W
F
C
(Note 2) Cutoff Frequency 220 MHz
2. 50 W Source and 50 W Lead Termination per Figure 2.
Applications Information
Suppressing Noise at the Source
Filter all I/O signals leaving the noisy environment
Locate I/O driver circuits close to the connector
Use the longest rise/fall times possible for all digital signals
Reducing Noise at the Receiver
Filter all I/O signals entering the unit
Locate the I/O filters as close as possible to the connector
Minimizing Noise Coupling
Use multilayer PCBs to minimize power and ground inductance
Keep clock circuits away from the I/O connector
Ground planes should be used whenever possible
Minimize the loop area for all high speed signals
Provide for adequate power decoupling
ESD Protection
Locate the suppression devices as close to the I/O connector as possible
Minimize the PCB trace length to the suppression device
Minimize the PCB trace length for the ground return for the suppression device
NZF220DFT1G, SNZF220DFT1G
http://onsemi.com
3
FREQUENCY RESPONSE SPECIFICATION
50 W
50 W
NZF220DF
SPECTRUM
ANALYZER
TRACKING
GENERATOR
V
in
V
out
V
G
Test Conditions:
Source Impedance = 50 W
Load Impedance = 50 W
Input Power = 0 dB
TEST BOARD
TG OUTPUT RF INPUT
Figure 1. Measurement Conditions
NZF220DF
Figure 2. Typical EMI Filter Response
(50 W Source and 50 W Lead Termination)
GAIN (dB)
1.0 10 100 1000
f, FREQUENCY (MHz)
6.3
3000
OUTPUT
3 dB = 220 MHz
Y
Y
50
40
30
20
10
0

NZF220DFT1G

Mfr. #:
Manufacturer:
ON Semiconductor
Description:
EMI Filter Circuits 2 Line EMI Filter w/6V TVS Array
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
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