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APT40SM120S

P1-P3P4-P6
PRELIMINARY
1
050-7698 Rev C 09/2016
APT40SM120B
PRELIMINARY
1200V, 41A, 80mΩ
Symbol Parameter Ratings Unit
V
DSS
Drain Source Voltage 1200 V
I
D
Continuous Drain Current @ T
C
= 25°C 41
A
Continuous Drain Current @ T
C
= 100°C 29
I
DM
Pulsed Drain Current
1
100
V
GS
Gate-Source Voltage -10 to +25 V
P
D
Total Power Dissipation
@ T
C
= 25°C 273 W
Linear Derating Factor 1.82 W/°C
TO-247
Package
APT40SM120B
G
D
S
DESCRIPTION
FEATURES / TYPICAL APPLICATIONS
MAXIMUM RATINGS
THERMAL AND MECHANICAL CHARACTERISTICS
Silicon Carbide N-Channel Power MOSFET
Symbol Characteristic Min Typ Max Unit
R
θ
JC
Junction to Case Thermal Resistance 0.36 0.55 °C/W
T
j
Operating Junction Temperature -55 175
°C
T
stg
Storage Junction Temperature Range -55
150
T
L
Soldering Temperature for 10 Seconds (1.6mm from case) 260
Torque Mounting Torque (TO-247 Package), 6-32 or M3 screw
10 in·lbf
1.1 N·m
Silicon carbide (SiC) power MOSFET product line from Microsemi increase your performance over
silicon MOSFET and silicon IGBT solutions while lowering your total cost of ownership for high-voltage
applications.
SiC MOSFET Features:
• Low capacitances and low gate charge
• Fast switching speed due to low internal
gate resistance (ESR)
• Stable operation at high junction
temperature, Tj(max) = +175C
• Fast and reliable body diode
• Superior avalanche ruggedness
SiC MOSFET Benets:
• Higheciencytoenablelighter/compact
system
• Simple to drive and easy to parallel
• Improved thermal capabilities and lower
switching losses
• Eliminates the need of external Free
Wheeling Diode
• Lower system cost of ownership
Applications:
• PV inverter, converter and industrial motor
drives
• Smart grid transmission & distribution
• Induction heating, and welding
• H/EV powertrain and EV charger
• Power supply and distribution
PRELIMINARY
2
050-7698 Rev C 09/2016
Symbol Parameter Test Conditions Min Typ Max Unit
C
iss
Input Capacitance
V
GS
= 0V, V
DD
= 1000V
f = 1MHz
2085
pFC
rss
Reverse Transfer Capacitance 25
C
oss
Output Capacitance 115
Q
g
Total Gate Charge
V
GS
= 0/20V
V
DD
= 800V
I
D
= 20A
130
nCQ
gs
Gate-Source Charge 19
Q
gd
Gate-Drain Charge 35
t
d(on)
Turn-On Delay Time
V
DD
= 800V
V
GS
= 0/20V
I
D
= 20A
R
G
=0.7Ω
3
L = 115 µH
T
c
=
25°C
Freewheeling Diode = APT10SCE120B
10
ns
t
r
Current Rise Time 6
t
d(o)
Turn-ODelayTime 32
t
f
Current Fall Time 16
E
on2
Turn-On Switching Energy
4
225
µJ
E
o
Turn-OSwitchingEnergy 50
t
d(on)
Turn-On Delay Time
V
DD
= 800V
V
GS
= 0/20V
I
D
= 20A
R
G
=0.7Ω
3
L = 115 µH
T
c
=
150°C
Freewheeling Diode = APT10SCE120B
8
ns
t
r
Current Rise Time 6
t
d(o)
Turn-ODelayTime 36
t
f
Current Fall Time 17
E
on2
Turn-On Switching Energy
4
225
µJ
E
o
Turn-OSwitchingEnergy 60
ESR Equivalent Series Resistance f = 1MHz, 25mV, Drain Short 1.2 Ω
SCWT Short Circuit Withstand Time V
DS
= 960V, V
GS
= 20V,
T
C
=
25°C 5 µS
E
AS
Avalanche Energy, Single Pulse V
DS
= 145V, V
GS
= 20V, I
D
= 20A,
T
C
=
25°C 2500 mJ
APT40SM120B
T
J
= 25°C unless otherwise specied
STATIC CHARACTERISTICS
Symbol Parameter Test Conditions Min Typ Max Unit
V
(BR)DSS
Drain-Source Breakdown Voltage V
GS
= 0V, I
D
= 1mA 1200 V
R
DS(on)
Drain-Source On Resistance
2
V
GS
= 20V, I
D
= 20A 80 100 mΩ
V
GS(th)
Gate-Source Threshold Voltage
V
GS
= V
DS
, I
D
= 1mA
1.7 3.0 V
∆V
GS(th)
/∆T
J
ThresholdVoltageTemperatureCoecient -4.8 mV/°C
I
DSS
Zero Gate Voltage Drain Current
V
DS
= 1200V
V
GS
= 0V
T
J
= 25°C 100
µA
T
J
= 125°C 500
I
GSS
Gate-Source Leakage Current V
GS
= +20V / -10V ±100 nA
DYNAMIC CHARACTERISTICS
T
J
= 25°C unless otherwise specied
Symbol Parameter Test Conditions Min Typ Max Unit
V
SD
Diode Forward Voltage
I
SD
= 20A, V
GS
= 0V
3.8
V
t
rr
Reverse Recovery Time
I
SD
= 20A, V
DD
= 800V
dI/dt = -1000A/µs
90
ns
Q
rr
Reverse Recovery Charge 265
nC
I
rrm
Reverse Recovery Current 7.8
A
Source-Drain Diode Characteristics
1 Repetitive Rating: Pulse width and case temperature limited by maximum junction temperature
2 Pulse test: Pulse Width < 380µs, duty cycle < 2%.
3
R
G
is total external gate resistance including internal gate driver impedance.
4
E
on2
includes energy of APT10SCE120B free wheeling diode.
PRELIMINARY
3
050-7698 Rev C 09/2016
0
5
10
15
20
0
200
400
600
800
0 20 40 60 80 100 120 140
0.9
1
1.1
1.2
1.3
1.4
1.5
1.6
1.7
−50 −25 0255075 100 125 150 175
0
20
40
60
80
0510 15 20 25
0
20
40
60
80
0510 15 20 25
0
20
40
60
80
0510 15 20 25
0
10
20
30
40
50
60
70
80
0246810 12 14
T
J
= 125°C
APT40SM120B
T
J
= 25°C
T
J
, JUNCTION TEMPERATURE (°C)
Figure 5, R
DS(on)
vs Junction Temperature
V
DS
, DRAIN-TO-SOURCE VOLTAGE (V)
Figure 1, Output Characteristics
I
D
, DRAIN CURRENT (A)
V
GS
= 20V
T
J
= 25°C
V
DS
, DRAIN-TO-SOURCE VOLTAGE (V)
Figure 2, Output Characteristics
I
D
, DRAIN CURRENT (A)
T
J
= 150°C
V
DS
, DRAIN-TO-SOURCE VOLTAGE (V)
Figure 3, Output Characteristics
I
D
, DRAIN CURRENT (A)
T
J
= 175°C
20V
10V
18V
14V
V
DS
, DRAIN-TO-SOURCE VOLTAGE (V)
Figure 4, Output Characteristics
I
D
, DRAIN CURRENT (A)
16V
12V
8V
6V
20V
10V
18V
14V
16V
12V
8V
6V
20V
10V
18V
14V
16V
12V
8V
T
J
= 175°C
R
DS(on)
, DRAIN-TO-SOURCE ON RESISTANCE
(NORMALIZED TO 25°C)
Q
G
, GATE CHARGE (nC)
Figure 6, Gate Charge Characteristics
V
GS
, GATE-TO-SOURCE VOLTAGE (V)
Q
GD
Q
GS
V
DS
V
GS
Q
G
V
DS
, DRAIN-TO-SOURCE VOLTAGE (V)
T
J
= 150°C
I
GS
= 1mA
I
DS
= 20A
V
DS
= 800V
NORMALIZED TO
T
J
= 25°C
V
GS
= 20V @ 20A
T
J
= 75°C
P1-P3P4-P6

APT40SM120S

Mfr. #:
Buy APT40SM120S
Manufacturer:
Microchip / Microsemi
Description:
MOSFET Power MOSFET - SiC
Lifecycle:
New from this manufacturer.
Delivery:
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