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BUH150G

P1-P3P4-P6P7-P9P10-P10
BUH150G
http://onsemi.com
4
TYPICAL STATIC CHARACTERISTICS
Figure 1. DC Current Gain @ 1 Volt
100
10
1
1010.10.001
I
C
, COLLECTOR CURRENT (AMPS)
h
FE
, DC CURRENT GAIN
T
J
= 125°C
T
J
= 25°C
T
J
= -20°C
V
CE
= 1 V
Figure 2. DC Current Gain @ 3 Volt
100
10
1
1010.10.001
I
C
, COLLECTOR CURRENT (AMPS)
h
FE
, DC CURRENT GAIN
T
J
= 125°C
T
J
= 25°C
T
J
= -20°C
V
CE
= 3 V
0.01 0.01
Figure 3. DC Current Gain @ 5 Volt
100
10
1
10010.10.01
I
C
, COLLECTOR CURRENT (AMPS)
h
FE
, DC CURRENT GAIN
T
J
= 125°C
T
J
= 25°C
T
J
= -20°C
V
CE
= 5 V
10
Figure 4. Collector−Emitter Saturation Voltage
10
1
0.01
10010.10.001
I
C
, COLLECTOR CURRENT (AMPS)
T
J
= 125°C
T
J
= 25°C
T
J
= -20°C
I
C
/I
B
= 5
V
CE
, VOLTAGE (VOLTS)
0.1
Figure 5. Collector−Emitter Saturation Voltage
10
1
0.01
1010.10.001
I
C
, COLLECTOR CURRENT (AMPS)
T
J
= 125°C
T
J
= 25°C
V
CE
, VOLTAGE (VOLTS)
0.1
0.01
Figure 6. Base−Emitter Saturation Region
1.5
1
0
10010.010.001
I
C
, COLLECTOR CURRENT (AMPS)
V
BE
, VOLTAGE (VOLTS)
T
J
= 125°C
T
J
= 25°C
T
J
= -20°C
I
C
/I
B
= 5
0.5
0.1
0.01 10
I
C
/I
B
= 10
10
100
100
100
BUH150G
http://onsemi.com
5
TYPICAL STATIC CHARACTERISTICS
Figure 7. Base−Emitter Saturation Region
1.5
0.5
0
10010.10.001
I
C
, COLLECTOR CURRENT (AMPS)
V
BE
, VOLTAGE (VOLTS)
T
J
= 125°C
T
J
= 25°C
T
J
= -20°C
1
0.01
I
C
/I
B
= 10
Figure 8. Collector Saturation Region
2
1
0
10010.10.01
I
B
, BASE CURRENT (A)
V
CE(sat)
(I
C
= 1 A)
V
CE
, VOLTAGE (VOLTS)
T
J
= 25°C
8 A
5 A
1.5
0.5
20 A
15 A
Figure 9. Capacitance
10000
10
100101
V
R
, REVERSE VOLTAGE (VOLTS)
C, CAPACITANCE (pF)
100
C
ib
(pF)
T
J
= 25°C
f
(test)
= 1 MHz
1000
Figure 10. Resistive Breakdown
900
700
400
100010010
R
BE
(W)
BVCER (VOLTS)
T
J
= 25°C
BVCER @ 10 mA
800
600
500
BVCER(sus) @ 200 mA
10 10
10 A
C
ob
(pF)
BUH150G
http://onsemi.com
6
t, TIME (s)μ
TYPICAL SWITCHING CHARACTERISTICS
Figure 11. Resistive Switching, t
on
2000
1000
0
1530
I
C
, COLLECTOR CURRENT (AMPS)
6
t, TIME (ns)
1400
800
I
B1
= I
B2
V
CC
= 300 V
PW = 40 ms
Figure 12. Resistive Switch Time, t
off
12
6
0
15100
I
C
, COLLECTOR CURRENT (AMPS)
Figure 13. Inductive Storage Time, t
si
8
0
1551
I
C
, COLLECTOR CURRENT (AMPS)
6
3
8
4
2
7
T
J
= 125°C
T
J
= 25°C
I
B1
= I
B2
V
CC
= 15 V
V
Z
= 300 V
L
C
= 200 mH
1800
I
C
/I
B
= 5
Figure 14. Inductive Storage Time,
t
c
& t
fi
@ I
C
/I
B
= 5
550
50
1571
I
C
, COLLECTOR CURRENT (AMPS)
t, TIME (ns)
150
5
T
J
= 125°C
T
J
= 25°C
t
c
t
fi
350
912
I
C
/I
B
= 10
I
C
/I
B
= 5
125°C
25°C
5
T
J
= 25°C
T
J
= 125°C
I
B1
= I
B2
V
CC
= 300 V
PW = 20 ms
I
C
/I
B
= 10
I
C
/I
B
= 5
t, TIME (s)μ
Figure 13 Bis. Inductive Storage Time, t
si
8
0
1041
I
C
, COLLECTOR CURRENT (AMPS)
7
4
7
T
J
= 125°C
T
J
= 25°C
I
B1
= I
B2
V
CC
= 15 V
V
Z
= 300 V
L
C
= 200 mH
t, TIME (s)μ
6
5
3
I
C
/I
B
= 10
I
B1
= I
B2
V
CC
= 15 V
V
Z
= 300 V
L
C
= 200 mH
Figure 15. Inductive Storage Time,
t
c
& t
fi
@ I
C
/I
B
= 10
800
0
1080
I
C
, COLLECTOR CURRENT (AMPS)
t, TIME (ns)
200
4
T
C
= 125°C
T
C
= 25°C
t
c
t
fi
400
I
B1
= I
B2
V
CC
= 15 V
V
Z
= 300 V
L
C
= 200 mH
600
1600
1200
600
400
200
10
7
4
5
1
2
391113
2
1
450
250
391113
700
500
300
100
2
6
125°C
25°C
P1-P3P4-P6P7-P9P10-P10

BUH150G

Mfr. #:
Buy BUH150G
Manufacturer:
ON Semiconductor
Description:
TRANS NPN 700V 15A TO-220AB
Lifecycle:
New from this manufacturer.
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