FGA15N120FTDTU Datasheet FGA15N120FTDTU | P1-P3

FGA15N120FTD Rev. C0

FGA15N20FTD 1200 V, 15 A Field Stop Trench IGBT

March 2013

Absolute Maximum Ratings

Notes:

1: Repetitive rating: Pulse width limited by max. junction temperature

Thermal Characteristics

Symbol Description Ratings Unit

V

CES

Collector to Emitter Voltage 1200 V

V

GES

Gate to Emitter Voltage  25 V

I

C

Collector Current @ T

C

= 25

o

C 30 A

Collector Current @ T

C

= 100

o

C 15 A

I

CM (1)

Pulsed Collector Current 45 A

I

F

Diode Continuous Forward Current

@ T

C

= 100

o

C

15 A

I

FM

Diode Maximum Forward Current

90 A

P

D

Maximum Power Dissipation @ T

C

= 25

o

C 220 W

Maximum Power Dissipation @ T

C

= 100

o

C 88 W

T

J

Operating Junction Temperature -55 to +150

o

C

T

stg

Storage Temperature Range -55 to +150

o

C

T

L

Maximum Lead Temp. for soldering

Purposes, 1/8” from case for 5 seconds

300

o

C

Symbol Parameter Typ. Max. Unit

R

JC

(IGBT) Thermal Resistance, Junction to Case - 0.57

o

C/W

R

JC

(Diode) Thermal Resistance, Junction to Case - 2.1

o

C/W

R

JA

Thermal Resistance, Junction to Ambient - 62.5

o

C/W

G

E

C

TO-3PN

GEC

FGA15N120FTD

1200 V, 15 A Field Stop Trench IGBT

Features

• Field Stop Trench Technology

• High Speed Switching

• Low Saturation Voltage: V

CE(sat)

= 1.58 V @ I

C

= 15 A

• High Input Impedance

• RoHS Complaint

Applications

• Induction Heating, Microwave Oven

General Description

Using advanced field stop trench technology, Fairchild

®

’s

1200V trench IGBTs offer superior conduction and switching

performances for soft switching applications. The device can

operate in parallel configuration with exceptional avalanche rug

-

gedness. This device is designed for induction heating and

microwave oven.

FGA15N120FTD 1200 V, 15 A Field Stop Trench IGBT

FGA15N120FTD Rev. C0

Package Marking and Ordering Information

Electrical Characteristics of the IGBT T

C

= 25°C unless otherwise noted

Device Marking Device Package Reel Size Tape Width Quantity

FGA15N120FTD FGA15N120FTDTU TO-3PN - - 30

Symbol Parameter Test Conditions Min. Typ. Max. Unit



Off Characteristics

BV

CES

Collector to Emitter Breakdown Voltage V

GE

= 0V, I

C

= 1mA 1200 - - V

I

CES

Collector Cut-Off Current V

CE

= V

CES

, V

GE

= 0V - - 1 mA

I

GES

G-E Leakage Current V

GE

= V

GES

, V

CE

= 0V - - ±250 nA



On Characteristics

V

GE(th)

G-E Threshold Voltage I

C

= 15mA, V

CE

= V

GE

3.5 6 7.5 V

V

CE(sat)

Collector to Emitter Saturation Voltage

I

C

= 15A, V

GE

= 15V - 1.58 2 V

I

C

= 15A, V

GE

= 15V,

T

C

= 125

o

C

- 1.83 - V



Dynamic Characteristics

C

ies

Input Capacitance

V

CE

= 30V

,

V

GE

= 0V,

f = 1MHz

- 2350 - pF

C

oes

Output Capacitance - 70 - pF

C

res

Reverse Transfer Capacitance - 45 - pF



Switching Characteristics

t

d(on)

Turn-On Delay Time

V

CC

= 600V, I

C

= 15A,

R

G

= 15, V

GE

= 15V,

Resistive Load, T

C

= 25

o

C

- 33 - ns

t

r

Rise Time - 80 - ns

t

d(off)

Turn-Off Delay Time - 160 - ns

t

f

Fall Time - 255 330 ns

E

on

Turn-On Switching Loss - 0.3 - mJ

E

off

Turn-Off Switching Loss - 0.58 0.74 mJ

E

ts

Total Switching Loss - 0.88 - mJ

t

d(on)

Turn-On Delay Time

V

CC

= 600V, I

C

= 15A,

R

G

= 15, V

GE

= 15V,

Resistive Load, T

C

= 125

o

C

- 30 - ns

t

r

Rise Time - 115 - ns

t

d(off)

Turn-Off Delay Time - 170 - ns

t

f

Fall Time - 390 - ns

E

on

Turn-On Switching Loss - 0.38 - mJ

E

off

Turn-Off Switching Loss - 0.89 - mJ

E

ts

Total Switching Loss - 1.27 - mJ

Q

g

Total Gate Charge

V

CE

= 600V, I

C

= 15A,

V

GE

= 15V

- 100 - nC

Q

ge

Gate to Emitter Charge - 19 - nC

Q

gc

Gate to Collector Charge - 45 - nC

FGA15N120FTD 1200 V, 15 A Field Stop Trench IGBT

FGA15N120FTD Rev. C0

Electrical Characteristics of the Diode T

C

= 25°C unless otherwise noted

Symbol Parameter Test Conditions Min. Typ. Max Unit

V

FM

Diode Forward Voltage I

F

= 15A

T

C

= 25

o

C - 1.4 1.8

V

T

C

= 125

o

C - 1.42 -

t

rr

Diode Reverse Recovery Time

I

ES

=15A,

dI/dt = 200A/s

T

C

= 25

o

C - 575 -

ns

T

C

= 125

o

C - 577 -

I

rr

Diode Peak Reverse Recovery Cyrrent

T

C

= 25

o

C - 30 -

A

T

C

= 125

o

C - 37 -

Q

rr

Diode Reverse Recovery Charge

T

C

= 25

o

C - 8.7 -

C

T

C

= 125

o

C - 10.7 -

FGA15N120FTDTU

FGA15N120FTDTU

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