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NJVNJD2873T4G-VF01

P1-P3P4-P5
© Semiconductor Components Industries, LLC, 2017
January, 2017 − Rev. 18
1 Publication Order Number:
NJD2873T4/D
NJD2873
Power Transistors
NPN Silicon DPAK For Surface Mount
Applications
Designed for high−gain audio amplifier applications.
Features
• High DC Current Gain
• Low Collector−Emitter Saturation Voltage
• High Current−Gain − Bandwidth Product
• Epoxy Meets UL 94 V−0 @ 0.125 in
• NJV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS
Rating Symbol Value Unit
Collector−Base Voltage V
CB
50 Vdc
Collector−Emitter Voltage V
CEO
50 Vdc
Emitter−Base Voltage V
EB
5 Vdc
Collector Current − Continuous I
C
2 Adc
Collector Current − Peak I
CM
3 Adc
Base Current I
B
0.4 Adc
Total Device Dissipation
@ T
C
= 25°C
Derate above 25°C
P
D
15
0.1
W
W/°C
Total Device Dissipation
@ T
A
= 25°C*
Derate above 25°C
P
D
1.68
0.011
W
W/°C
Operating and Storage Junction
Temperature Range
T
J
, T
stg
−65 to +175 °C
ESD − Human Body Model HBM 3B V
ESD − Machine Model MM C V
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
Device Package Shipping
†
ORDERING INFORMATION
SILICON
POWER TRANSISTORS
2 AMPERES
50 VOLTS
15 WATTS
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
MARKING DIAGRAM
A = Assembly Location
Y = Year
WW = Work Week
G = Pb−Free Device
DPAK
CASE 369C
STYLE 1
AYWW
J
2873G
www.onsemi.com
NJD2873T4G DPAK
(Pb−Free)
2,500
Units / Ree
l
NJVNJD2873T4G DPAK
(Pb−Free)
2,500
Units / Ree
l
1
1
BASE
3
EMITTER
COLLECTOR
2,4
2
3
4
NJD2873
www.onsemi.com
2
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Thermal Resistance
Junction−to−Case
Junction−to−Ambient (Note 1)
R
q
JC
R
q
JA
10
89.3
°C/W
1. These ratings are applicable when surface mounted on the minimum pad sizes recommended.
ELECTRICAL CHARACTERISTICS (T
C
= 25°C unless otherwise noted)
Characteristic
Symbol Min Max Unit
OFF CHARACTERISTICS
Collector−Emitter Sustaining Voltage (Note 2)
(I
C
= 10 mAdc, I
B
= 0)
V
CEO(sus)
50 −
Vdc
Collector Cutoff Current
(V
CB
= 50 Vdc, I
E
= 0)
I
CBO
− 100
nAdc
Emitter Cutoff Current (V
BE
= 5 Vdc, I
C
= 0) I
EBO
− 100 nAdc
ON CHARACTERISTICS
DC Current Gain (Note 2)
(I
C
= 0.5 A, V
CE
= 2 V)
(I
C
= 2 Adc, V
CE
= 2 Vdc)
(I
C
= 0.75 Adc, V
CE
= 1.6 Vdc, −40°C ≤ T
J
≤ 150°C)
h
FE
120
40
80
360
−
360
−
Collector−Emitter Saturation Voltage (Note 2)
(I
C
= 1 A, I
B
= 0.05 A)
V
CE(sat)
− 0.3
Vdc
Base−Emitter Saturation Voltage (Note 2) (I
C
= 1 A, I
B
= 0.05 Adc) V
BE(sat)
− 1.2 Vdc
Base−Emitter On Voltage (Note 2)
(I
C
= 1 Adc, V
CE
= 2 Vdc)
(I
C
= 0.75 Adc, V
CE
= 1.6 Vdc, −40°C ≤ T
J
≤ 150°C)
V
BE(on)
−
−
1.2
0.95
Vdc
DYNAMIC CHARACTERISTICS
Current−Gain − Bandwidth Product (Note 3)
(I
C
= 100 mAdc, V
CE
= 10 Vdc, f
test
= 10 MHz)
f
T
65 −
MHz
Output Capacitance
(V
CB
= 10 Vdc, I
E
= 0, f = 0.1 MHz)
C
ob
− 80
pF
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
2. Pulse Test: Pulse Width = 300 ms, Duty Cycle [ 2%.
3. f
T
= ⎪h
fe
⎪• f
test
.
NJD2873
www.onsemi.com
3
TYPICAL CHARACTERISTICS
−40°C
0.4
0.01 0.1 1 1
0
I
C
, COLLECTOR CURRENT (AMPS)
V
CE(sat)
, COLLECTOR−EMITTER
SATURATION VOLTAGE (V)
Ic/Ib = 20
−40°C
1.2
0.01 0.1 1 10
I
C
, COLLECTOR CURRENT (AMPS)
V
BE(sat)
, BASE−EMITTER SATURATION
VOLTAGE (V)
100°C
25°C
Ic/Ib = 20
1.0
0.8
0.6
0.4
0.2
−40°C
100
1000
0.01 0.1 1 10
I
C
, COLLECTOR CURRENT (AMPS)
h
FE
, DC CURRENT GAIN
100°C
V
CE
= 2.0 V
10
25
25
Figure 1. Power Derating
T, TEMPERATURE (°C)
0
50 75 100 125 150
15
10
5
20
P
D
, POWER DISSIPATION (WATTS)
Figure 2. DC Current Gain Figure 3. Collector−Emitter Saturation Voltage
Figure 4. Base−Emitter Saturation Voltage Figure 5. Base−Emitter Voltage
25°C
150°C
175°C
25°C
100°C
150°C
175°C
175°C
150°C
−40°C
I
C
, COLLECTOR CURRENT (AMPS)
V
BE(on)
, BASE−EMITTER VOLTAGE (V)
100°C
25°C
V
CE
= 2.0 V
175°C
150°C
0.3
0.2
0.1
0
1.1
0.9
0.7
0.5
0.3
1.2
1.0
0.8
0.6
0.4
0.2
1.1
0.9
0.7
0.5
0.3
0.01 0.1 1 1
0
175 2000
P1-P3P4-P5

NJVNJD2873T4G-VF01

Mfr. #:
Buy NJVNJD2873T4G-VF01
Manufacturer:
ON Semiconductor
Description:
Bipolar Transistors - BJT BIPOLAR XTSR 2A/50V
Lifecycle:
New from this manufacturer.
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