STP9NK50Z - STP9NK50ZFP - STB9NK50Z - STB9NK50Z-1
2/13
ABSOLUTE MAXIMUM RATINGS
( ) Pulse width limited by safe operating area
(1) I
SD
≤7.2A, di/dt ≤200A/µs, V
DD
≤ V
(BR)DSS
,T
j
≤ T
JMAX.
(*) Limited only by maximum temperature allowed
THERMAL DATA
AVALANCHE CHARACTERISTICS
GATE-SOURCE ZENER DIODE
PROTECTION FEATURES OF GATE-TO-SOURCE ZENER DIODES
The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s
ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be
applied from gate to souce. In this respect the Zener voltage is appropriate to achieve an efficient and cost-
effective intervention to protect the device’s integrity. These integrated Zener diodes thus avoid the usage
of external components.
Symbol Parameter Value Unit
STP9NK50Z
STB9NK50Z
STB9NK50Z-1
STP9NK50ZFP
V
DS
Drain-source Voltage (V
GS
=0)
500 V
V
DGR
Drain-gate Voltage (R
GS
=20kΩ)
500 V
V
GS
Gate- source Voltage ± 30 V
I
D
Drain Current (continuous) at T
C
=25°C
7.2 7.2 (*) A
I
D
Drain Current (continuous) at T
C
= 100°C
4.5 4.5 (*) A
I
DM
( )
Drain Current (pulsed) 28.8 28.8 (*) A
P
TOT
Total Dissipation at T
C
=25°C
110 30 W
Derating Factor 0.88 0.24 W/°C
V
ESD(G-S)
Gate source ESD(HBM-C=100pF, R=1.5KΩ) 3500 V
dv/dt (1) Peak Diode Recovery voltage slope 4.5 V/ns
V
ISO
Insulation Withstand Voltage (DC) - 2500 V
T
j
T
stg
Operating Junction Temperature
Storage Temperature
-55to150
-55to150
°C
°C
TO-220 / D
2
PAK /
I
2
PAK
TO-220FP
Rthj-case Thermal Resistance Junction-case Max 1.14 4.2 °C/W
Rthj-amb Thermal Resistance Junction-ambient Max 62.5 °C/W
T
l
Maximum Lead Temperature For Soldering Purpose
300 °C
Symbol Parameter Max Value Unit
I
AR
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by T
j
max)
7.2 A
E
AS
Single Pulse Avalanche Energy
(starting T
j
=25°C, I
D
=I
AR
,V
DD
=50V)
190 mJ
Symbol Parameter Test Conditions Min. Typ. Max. Unit
BV
GSO
Gate-Source Breakdown
Voltage
Igs=± 1mA (Open Drain) 30 V
