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MRF4427

P1-P3P4-P5
MRF4427.PDF 4-24-03
Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein
Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct.
MRF4427, R1, R2
DESCRIPTION: Designed for general-purpose RF amplifier applications,
such as; pre-drivers, Oscillators, etc.
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C)
Symbol Parameter Value Unit
V
CEO
Collector-Emitter Voltage 20 Vdc
V
CBO
Collector-Base Voltage 40 Vdc
V
EBO
Emitter-Base Voltage 2.0 Vdc
I
C
Collector Current 400 mA
Thermal Data
P
D
Total Device Dissipation @ TC = 25ºC
Derate above 25ºC
1.5
12.5
Watts
mW/ ºC
T
stg
Storage Temperature
-65 to + 150 ºC
R
θJA
Thermal Resistance, Junction to Ambient
125 ºC/W
SO-8
Features
• Low Cost SO-8 Plastic Surface Mount Package.
• S-Parameter Characterization
• Tape and Reel Packaging Options Available
• Low Voltage Version of MRF3866
• Maximum Available Gain – 20dB(typ) @ 200MHz
RF & MICROWAVE DISCRETE
LOW POWER TRANSISTORS
R1 suffix–Tape and Reel, 500 units
R2 suffix–Tape and Reel, 2500 units
MRF4427.PDF 4-24-03
Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein
Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct.
MRF4427, R1, R2
ELECTRICAL SPECIFICATIONS (Tcase = 25°C)
STATIC
(off)
Symbol Test Conditions Value
Min. Typ. Max. Unit
BVCEO Collector-Emitter Breakdown Voltage
(IC = 5.0 mAdc, IB = 0) 20 - - Vdc
BVCBO Collector-Base Breakdown Voltage
(IC = 0.1 mAdc, IE = 0) 40 - - Vdc
BVEBO Emitter-Base Breakdown Voltage
(IE = 0.1 mAdc, IC = 0) 2.0 - - Vdc
ICEO Collector Cutoff Current
(VCE = 20 Vdc, VBE = 0 Vdc) - - .02 mA
(on)
HFE DC Current Gain
(IC = 100 mAdc, VCE = 5 Vdc)
(IC = 360 mAdc, VCE = 5 Vdc)
10
5.0
-
-
200
-
VCE(sat) Collector-Emitter Saturation Voltage
(IC = 100 mAdc, IB = 20 mA) 60 -
mVdc
DYNAMIC
Symbol Test Conditions Value
Min. Typ. Max. Unit
Ftau Current-Gain Bandwidth Product
(IC = 50 mAdc, VCE = 12 Vdc, f = 200 MHz)
-
1.3 - GHz
Cob Output Capacitance
(VCB = 12 Vdc, IE = 0, f = 1.0 MHz)
-
- 3.4 GHz
MRF4427.PDF 4-24-03
Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein
Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct.
MRF4427, R1, R2
FUNCTIONAL
Symbol Test Conditions Value
Min. Typ. Max. Unit
G
U max
Maximum Unilateral Gain
IC = 50 mAdc, VCE = 12 Vdc, f = 200 MHz 16 18
-
dB
MAG Maximum Available Gain
IC = 50 mAdc, VCE = 12 Vdc, f = 200 MHz 18 20
-
dB
|S
21
|
2
Insertion Gain (calculated)
IC = 50 mAdc, VCE = 12 Vdc, f = 200 MHz 12 14 - dB
Table 1. Common Emitter S-Parameters, @ VCE = 12 V, IC = 50 mA
f
S11
S21
S12
S22
(MHz) |S11|
∠ φ
|S21|
∠ φ
|S12|
∠ φ
|S22|
∠ φ
50 .672 -145 20.15 112 .021 45 .447 -59
100 .721 -163 10.78 96 .026 44 .271 -67
200 .743 -174 5.37 85 .037 54 .199 -72
500 .768 170 2.18 63 .070 59 .264 -86
750 .775 161 1.53 48 .096 62 .356 -98
1000 .778 152 1.07 36 .122 65 .437 -109
P1-P3P4-P5

MRF4427

Mfr. #:
Buy MRF4427
Manufacturer:
Advanced Semiconductor, Inc.
Description:
RF Bipolar Transistors RF Transistor
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
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