LARONTROL
Electronic Devices
Distributed by
USA
3540 Bassett Street
Santa Clara, CA 95054
Phone: (408) 982-0700
FAX: (408) 496-0670
EUROPE
IXYS Semiconductor GmbH
Lampertheim Germany
Phone: +49.6206.503.0
Fax: +49.6206.503.627
www.IXYS.net
Type
Number
Repetitive
Peak
Minimum
Avalanche
Voltage
V
(BR)R
CIRCUIT DIAGRAM
IXYS reserves the right to change limits, test conditions and dimensions.
HTZ150C Series High Voltage
I
F(AV)
= 3.0 A Diode Rectifier
V
RRM
= 9600 V Module
Centre Tap
-V
RRM
-
_
+
CURRENT RATINGS - AIR COOLED
I
F(AV)
Mean forward current Half wave resistive load T
amb
= 35ºC 3.0 A
I
F
Continuous (direct) forward current T
amb
= 35ºC 3.6 A
R
th(j-a)
Thermal resistance junction to ambient 6.5 ºC/W
CURRENT RATINGS - OIL COOLED
I
F(AV)
Mean forward current Half wave resistive load T
oil
= 60ºC 6.5 A
I
T
Continuous (direct) forward current T
oil
= 60ºC 7.0 A
R
th(j-o)
Thermal resistance junction to oil 2.0 ºC/W
SURGE RATINGS
I
2
t I
2
t for fusing 10 ms half sine T
vj
= 150ºC 50 A
2
sec
I
FSM
Surge (non-repetitive) forward current T
vj
= 150ºC 100 A
TEMPERATURE AND FREQUENCY RATINGS
T
vj
Virtual junction temperature Forward (conducting) 180 ºC
Reverse (blocking) 180 ºC
T
stg
Storage temperature range -40 to 100 ºC
f Frequency range 20 to 400 Hz
CHARACTERISTICS T
case
= 25ºC unless otherwise stated
V
FM
Forward voltage At 2 Amps peak max 6.0 V
I
RM
Peak reverse current At V
RRM
; T
case
= 150°C max 0.5 mA
HTZ150C9K 9600 10200
HTZ150C8K 8400 9000
HTZ150C7K 7200 7800
HTZ150C6K 6000 6600
Dimensioned Outlines
Dimensions shown are maximum in mm
Weight typ.: 0,24 Kg
Issue 1 June 1998
32
31
130
45 45
90
115
TAPPED M5, 3 OFF
TAPPED M5, 2 OFF
MOUNTING BUSHES
ZC
