2003 Aug 20 3
NXP Semiconductors Product data sheet
Very low V
F
MEGA
Schottky barrier rectifiers
PMEG2005AEA; PMEG3005AEA;
PMEG4005AEA
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
Notes
1. Refer to SOD323 (SC-76) standard mounting conditions.
2. For Schottky barrier diodes thermal runaway has to be considered, as in some applications the reverse power losses
P
R
are a significant part of the total power losses. Nomograms for determination of the reverse power losses P
R
and
I
F(AV)
rating will be available on request.
THERMAL CHARACTERISTICS
Notes
1. Refer to SOD323 (SC-76) standard mounting conditions.
2. For Schottky barrier diodes thermal runaway has to be considered, as in some applications the reverse power losses
P
R
are a significant part of the total power losses. Nomograms for determination of the reverse power losses P
R
and
I
F(AV)
rating will be available on request.
3. Device mounted on an FR4 printed-circuit board with copper clad 10 × 10 mm.
4. Solder point of cathode tab.
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
R
continuous reverse voltage
PMEG2005AEA − 20 V
PMEG3005AEA − 30 V
PMEG4005AEA − 40 V
I
F
continuous forward current note 1 − 0.5 A
I
FRM
repetitive peak forward current t
p
≤ 1 ms; δ ≤ 0.5 − 3.5 A
I
FSM
non-repetitive peak forward current t
p
= 8 ms; square wave − 10 A
T
j
junction temperature note 2 − 150 °C
T
amb
operating ambient temperature note 2 −65 +150 °C
T
stg
storage temperature −65 +150 °C
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
th j-a
thermal resistance from junction to
ambient
in free air; notes 1 and 2 450 K/W
in free air; notes 2 and 3 210 K/W
R
th j-s
thermal resistance from junction to
soldering point
note 4 90 K/W
