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NRVBAF440T3G

P1-P3P4-P5
© Semiconductor Components Industries, LLC, 2016
December, 2016 − Rev. 3
1 Publication Order Number:
MBRAF440T3/D
MBRAF440, NRVBAF440
Surface Mount
Schottky Power Rectifier
This device employs the Schottky Barrier principle in a large area
metal−to−silicon power diode. State−of−the−art geometry features
epitaxial construction with oxide passivation and metal overlay
contact. Ideally suited for low voltage, high frequency rectification, or
as free wheeling and polarity protection diodes in surface mount
applications where compact size and weight are critical to the system.
Features
• Low Profile Package for Space Constrained Applications
• Rectangular Package for Automated Handling
• Highly Stable Oxide Passivated Junction
• 150°C Operating Junction Temperature
• Guard−Ring for Stress Protection
• NRV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
• These are Pb−Free and Halide−Free Devices
Mechanical Charactersistics
• Case: Epoxy, Molded, Epoxy Meets UL 94, V−0
• Weight: 95 mg (approximately)
• Finish: All External Surfaces Corrosion Resistant and Terminal
Leads are Readily Solderable
• Lead and Mounting Surface Temperature for Soldering Purposes:
260°C Max. for 10 Seconds
• Cathode Polarity Band
• Device Meets MSL 1 Requirements
Device Package Shipping
†
ORDERING INFORMATION
SMA−FL
CASE 403AA
STYLE 6
SCHOTTKY BARRIER
RECTIFIER
4.0 AMPERE
40 VOLTS
www.onsemi.com
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
MBRAF440T3G SMA−FL
(Pb−Free)
5000 / Tape & Ree
l
RAF = Specific Device Code
A = Assembly Location
Y = Year
WW = Work Week
G = Pb−Free Package
MARKING DIAGRAM
NRVBAF440T3G SMA−FL
(Pb−Free)
5000 / Tape & Ree
l
RAF
AYWWG
MBRAF440, NRVBAF440
www.onsemi.com
2
MAXIMUM RATINGS
Rating Symbol Value Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
V
RRM
V
RWM
V
R
40 V
Average Rectified Forward Current
(At Rated V
R
, T
L
= 107°C)
I
O
4.0
A
Non−Repetitive Peak Surge Current
(Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz)
I
FSM
100
A
Storage/Operating Case Temperature T
stg
, T
C
−55 to +150 °C
Operating Junction Temperature (Note 1) T
J
−55 to +150 °C
Voltage Rate of Change
(Rated V
R
, T
J
= 25°C)
dv/dt
10,000
V/ms
ESD Rating Human Body Model
Machine Model
ESD
HBM
ESD
MM
3B
M4
−
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. The heat generated must be less than the thermal conductivity from Junction−to−Ambient: dP
D
/dT
J
< 1/R
q
JA
.
THERMAL CHARACTERISTICS
Characteristic
Symbol Value Unit
Thermal Resistance − Junction−to−Lead (Note 2)
Thermal Resistance − Junction−to−Ambient (Note 2)
R
θ
JL
R
θ
JA
25
90
°C/W
2. 1 inch square pad size (1 × 0.5 inch) for each lead on FR4 board.
ELECTRICAL CHARACTERISTICS
Characteristic
Symbol Value Unit
Maximum Instantaneous Forward Voltage (Note 3)
(I
F
= 4.0 A)
V
F
T
J
= 25°C T
J
= 100°C
V
0.485 0.435
Maximum Instantaneous Reverse Current
(V
R
= 40 V)
I
R
T
J
= 25°C T
J
= 100°C
mA
0.3 15
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
3. Pulse Test: Pulse Width ≤ 250 μs, Duty Cycle ≤ 2.0%.
MBRAF440, NRVBAF440
www.onsemi.com
3
TYPICAL CHARACTERISTICS
Figure 1. Typical Forward Voltage Figure 2. Maximum Forward Voltage
10
1
0.1
V
F
, INSTANTANEOUS FORWARD VOLTAGE (VOLTS)
0.10 0.30 0.50
T
J
= 125°C
T
J
= −55°C
T
J
= 25°C
I
F
, INSTANTANEOUS FORWARD
CURRENT (AMPS)
0.20 0.40 0.60
T
J
= 100°C
10
1
0.1
V
F
, MAXIMUM INSTANTANEOUS FORWARD
VOLTAGE (VOLTS)
0.10 0.30 0.50
T
J
= 125°C
T
J
= −55°C
T
J
= 25°C
I
F
, INSTANTANEOUS FORWARD
CURRENT (AMPS)
0.20 0.40
T
J
= 100°C
0.6
0
Figure 3. Typical Reverse Current Figure 4. Maximum Reverse Current
V
R
, REVERSE VOLTAGE (VOLTS)
100E−3
10E−3
10E−6
100E−6
30 4020100
I
R
, REVERSE CURRENT (AMPS)
100E−9
100E−12
T
J
= 125°C
1E−3
1E−6
10E−9
1E−9
T
J
= −55°C
T
J
= 25°C
T
J
= 100°C
V
R
, REVERSE VOLTAGE (VOLTS)
100E−3
10E−3
10E−6
100E−6
30 4
0
20100
I
R
, MAXIMUM REVERSE CURRENT (AMPS
)
T
J
= 125°C
1E−3
1E−6
T
J
= −55°C
T
J
= 25°C
T
J
= 100°C
Figure 5. Forward Power Dissipation
0.5 1.5 2 30 1 2.5
1.8
0
0.6
I
O
, AVERAGE FORWARD CURRENT (AMPS)
P
FO
, AVERAGE POWER DISSIPATION (WATTS
)
Figure 6. Capacitance
3.5 54.5
0.2
0.4
1.0
0.8
1.6
V
R
, REVERSE VOLTAGE (VOLTS)
302520151050
100
1000
C, CAPACITANCE (pF)
4
0
1.4
1.2
dc
SQUARE
WAVE
I
pk
/I
O
= p
I
pk
/I
O
= 5
I
pk
/I
O
= 10
I
pk
/I
O
= 20
35
T
J
= 25 °C
4
P1-P3P4-P5

NRVBAF440T3G

Mfr. #:
Buy NRVBAF440T3G
Manufacturer:
ON Semiconductor
Description:
Schottky Diodes & Rectifiers 4.0A, 40V Schottky Rectifier
Lifecycle:
New from this manufacturer.
Delivery:
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