IPA90R340C3XKSA1 Datasheet IPA90R340C3XKSA1 | P1-P3

IPA90R340C3

CoolMOS

™

Power Transistor

Features

• Lowest figure-of-merit R

ON

x Q

g

• Extreme dv/dt rated

• High peak current capability

• Qualified according to JEDEC

1)

for target applications

• Pb-free lead plating; RoHS compliant

• Worldwide best R

DS,on

in TO220 Fullpak

• Ultra low gate charge

CoolMOS™ 900V is designed for:

• Quasi Resonant Flyback / Forward topologies

• PC Silverbox and consumer applications

• Industrial SMPS

Maximum ratings, at T

J

=25 °C, unless otherwise specified

Parameter Symbol Conditions Unit

Continuous drain current

2)

I

D

T

C

=25 °C

A

T

C

=100 °C

Pulsed drain current

3)

I

D,pulse

T

C

=25 °C

Avalanche energy, single pulse

E

AS

I

D

=3.1 A, V

DD

=50 V

678 mJ

Avalanche energy, repetitive t

AR

3),4)

E

AR

I

D

=3.1 A, V

DD

=50 V

Avalanche current, repetitive t

AR

3),4)

I

AR

A

MOSFET dv /dt ruggedness dv /dt

V

DS

=0...400 V

V/ns

Gate source voltage

V

GS

static V

AC (f>1 Hz)

Power dissipation

P

tot

T

C

=25 °C

W

Operating and storage temperature

T

J

, T

stg

°C

Mounting torque M2.5 screws 50 Ncm

Value

15

9.5

34

±30

35

-55 ... 150

1

3.1

50

±20

V

DS

@ T

J

=25°C 900 V

R

DS(on),max

@ T

J

= 25°C 0.34

Ω

Q

g,typ

94 nC

Product Summary

Type Package Marking

IPA90R340C3 PG-TO220 FP 9R340C

PG-TO220 FP

Rev. 1.0 page 1 2008-07-29

IPA90R340C3

Maximum ratings, at T

J

=25 °C, unless otherwise specified

Parameter Symbol Conditions Unit

Continuous diode forward current

2)

I

S

A

Diode pulse current

3)

I

S,pulse

34

Reverse diode dv /dt

5)

dv /dt 4 V/ns

Parameter Symbol Conditions Unit

min. typ. max.

Thermal characteristics

Thermal resistance, junction - case

R

thJC

- - 3.6 K/W

R

thJA

leaded - - 62

Soldering temperature,

wavesoldering only allowed at leads

T

sold

1.6 mm (0.063 in.)

from case for 10 s

- - 260 °C

Electrical characteristics, at T

J

=25 °C, unless otherwise specified

Static characteristics

Drain-source breakdown voltage

V

(BR)DSS

V

GS

=0 V, I

D

=250 µA

900 - - V

Gate threshold voltage

V

GS(th)

V

DS

=V

GS

, I

D

=1 mA

2.5 3 3.5

Zero gate voltage drain current

I

DSS

V

DS

=900 V, V

GS

=0 V,

T

j

=25 °C

--2µA

V

DS

=900 V, V

GS

=0 V,

T

j

=150 °C

-20-

Gate-source leakage current

I

GSS

V

GS

=20 V, V

DS

=0 V

- - 100 nA

Drain-source on-state resistance

R

DS(on)

V

GS

=10 V, I

D

=9.2 A,

T

j

=25 °C

- 0.28 0.34

Ω

V

GS

=10 V, I

D

=9.2 A,

T

j

=150 °C

- 0.76 -

Gate resistance

R

G

f =1 MHz, open drain - 1.3 -

Ω

Values

Thermal resistance, junction -

ambient

Value

T

C

=25 °C

9.2

Rev. 1.0 page 2 2008-07-29

IPA90R340C3

Parameter Symbol Conditions Unit

min. typ. max.

Dynamic characteristics

Input capacitance

C

iss

- 2400 - pF

Output capacitance

C

oss

- 120 -

Effective output capacitance, energy

C

o(er)

-71-

Effective output capacitance, time

C

o(tr)

- 280 -

Turn-on delay time

t

d(on)

-70-ns

Rise time

t

r

-20-

Turn-off delay time

t

d(off)

- 400 -

Fall time

t

f

-25-

Gate Charge Characteristics

Gate to source charge

Q

gs

-11-nC

Gate to drain charge

Q

gd

-41-

Gate charge total

Q

g

- 94 tbd

Gate plateau voltage

V

plateau

- 4.6 - V

Reverse Diode

Diode forward voltage

V

SD

V

GS

=0 V, I

F

=9.2 A,

T

j

=25 °C

- 0.8 1.2 V

Reverse recovery time

t

rr

- 510 - ns

Reverse recovery charge

Q

rr

-11-µC

Peak reverse recovery current

I

rrm

-41-A

6)

C

o(er)

is a fixed capacitance that gives the same stored energy as C

oss

while V

DS

is rising from 0 to 50% V

DSS.

7)

C

o(tr)

is a fixed capacitance that gives the same charging time as C

oss

while V

DS

is rising from 0 to 50% V

DSS.

Values

V

GS

=0 V, V

DS

=100 V,

f =1 MHz

V

DD

=400 V,

V

GS

=10 V, I

D

=9.2A,

R

G

=23.1 Ω

V

DD

=400 V, I

D

=9.2 A,

V

GS

=0 to 10 V

V

GS

=0 V, V

DS

=0 V

to 500 V

5)

I

SD

≤ I

D

, di/dt≤200 A/µs, V

DClink

=400V, V

peak

<V

(BR)DSS

, T

J

<T

J,max

, identical low side and high side switch

V

R

=400 V, I

F

=I

S

,

di

F

/dt =100 A/µs

3)

Pulse width t

p

limited by T

J,max

4)

Repetitive avalanche causes additional power losses that can be calculated as P

AV

=E

AR

*f.

2)

Limited only by maximum temperature

1)

J-STD20 and JESD22

Rev. 1.0 page 3 2008-07-29

IPA90R340C3XKSA1

IPA90R340C3XKSA1

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