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IRL3502L

P1-P3P4-P6P7-P7
Parameter Max. Units
I
D
@ T
C
= 25°C Continuous Drain Current, V
GS
@ 5.0V 110
I
D
@ T
C
= 100°C Continuous Drain Current, V
GS
@ 5.0V 67 A
I
DM
Pulsed Drain Current 420
P
D
@T
C
= 25°C Power Dissipation 140 W
Linear Derating Factor 1.1 W/°C
V
GS
Gate-to-Source Voltage ± 10 V
V
GSM
Gate-to-Source Voltage 14 V
(Start Up Transient, tp = 100µs)
E
AS
Single Pulse Avalanche Energy 390 mJ
I
AR
Avalanche Current 64 A
E
AR
Repetitive Avalanche Energy 14 mJ
dv/dt Peak Diode Recovery dv/dt 5.0 V/ns
T
J
Operating Junction and -55 to + 150
T
STG
Storage Temperature Range
Soldering Temperature, for 10 seconds 300 (1.6mm from case )
°C
Mounting torque, 6-32 or M3 srew 10 lbf•in (1.1N•m)
11/17/97
IRL3502
PRELIMINARY
HEXFET
®
Power MOSFET
PD 9.1698A
These HEXFET Power MOSFETs were designed
specifically to meet the demands of CPU core DC-DC
converters. Advanced processing techniques
combined with an optimized gate oxide design results
in a die sized specifically to offer maximum efficiency
at minimum cost.
The TO-220 package is universally preferred for all
commercial-industrial applications at power dissipation
levels to approximately 50 watts. The low thermal
resistance and low package cost of the TO-220
contribute to its wide acceptance throughout the
industry.
S
D
G
Absolute Maximum Ratings
Parameter Typ. Max. Units
R
θJC
Junction-to-Case ––– 0.89
R
θCS
Case-to-Sink, Flat, Greased Surface 0.50 ––– °C/W
R
θJA
Junction-to-Ambient ––– 62
Thermal Resistance
V
DSS
= 20V
R
DS(on)
= 0.007Ω
I
D
= 110A
T
O
-22
0
AB
Description
l Advanced Process Technology
l Optimized for 4.5V-7.0V Gate Drive
l Ideal for CPU Core DC-DC Converters
l Fast Switching
IRL3502
Parameter Min. Typ. Max. Units Conditions
V
(BR)DSS
Drain-to-Source Breakdown Voltage 20 ––– ––– V V
GS
= 0V, I
D
= 250µA
∆V
(BR)DSS
/∆T
J
Breakdown Voltage Temp. Coefficient ––– 0.019 ––– V/°C Reference to 25°C, I
D
= 1mA
––– ––– 0.008 V
GS
= 4.5V, I
D
= 64A
––– ––– 0.007
Ω
V
GS
= 7.0V, I
D
= 64A
V
GS(th)
Gate Threshold Voltage 0.70 ––– ––– V V
DS
= V
GS
, I
D
= 250µA
g
fs
Forward Transconductance 77 ––– ––– S V
DS
= 10V, I
D
= 64A
––– ––– 25
µA
V
DS
= 20V, V
GS
= 0V
––– ––– 250 V
DS
= 10V, V
GS
= 0V, T
J
= 150°C
Gate-to-Source Forward Leakage ––– ––– 100
nA
V
GS
= -10V
Gate-to-Source Reverse Leakage ––– ––– -100 V
GS
= 10V
Q
g
Total Gate Charge ––– ––– 110 I
D
= 64A
Q
gs
Gate-to-Source Charge ––– ––– 27 nC V
DS
= 16V
Q
gd
Gate-to-Drain ("Miller") Charge ––– ––– 39 V
GS
= 4.5V, See Fig. 6
t
d(on)
Turn-On Delay Time ––– 10 ––– V
DD
= 10V
t
r
Rise Time ––– 140 –––
ns
I
D
= 64A
t
d(off)
Turn-Off Delay Time ––– 96 ––– R
G
= 3.8Ω, V
GS
= 4.5V
t
f
Fall Time ––– 130 ––– R
D
= 0.15Ω,
Between lead,
6mm (0.25in.)
from package
and center of die contact
C
iss
Input Capacitance ––– 4700 ––– V
GS
= 0V
C
oss
Output Capacitance ––– 1900 ––– pF V
DS
= 15V
C
rss
Reverse Transfer Capacitance ––– 640 ––– ƒ = 1.0MHz, See Fig. 5
S
D
G
S
D
G
Parameter Min. Typ. Max. Units Conditions
I
S
Continuous Source Current MOSFET symbol
(Body Diode)
––– –––
showing the
I
SM
Pulsed Source Current integral reverse
(Body Diode)
––– –––
p-n junction diode.
V
SD
Diode Forward Voltage ––– ––– 1.3 V T
J
= 25°C, I
S
= 64A, V
GS
= 0V
t
rr
Reverse Recovery Time ––– 87 130 ns T
J
= 25°C, I
F
= 64A
Q
rr
Reverse RecoveryCharge ––– 200 310 nC di/dt = 100A/µs
t
on
Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by L
S
+L
D
)
Source-Drain Ratings and Characteristics
110
420
A
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
R
DS(on)
Static Drain-to-Source On-Resistance
I
GSS
nH
L
S
Internal Source Inductance ––– 7.5 –––
L
D
Internal Drain Inductance ––– 4.5 –––
I
DSS
Drain-to-Source Leakage Current
Repetitive rating; pulse width limited by
max. junction temperature.
I
SD
≤ 64A, di/dt ≤ 86A/µs, V
DD
≤ V
(BR)DSS
,
T
J
≤ 150°C
Notes:
Starting T
J
= 25°C, L = 190µH
R
G
= 25Ω, I
AS
= 64A.
Pulse width ≤ 300µs; duty cycle ≤ 2%.
Calculated continuous current based on maximum allowable
junction temperature; for recommended current-handling of the
package refer to Design Tip # 93-4
IRL3502
Fig 4. Normalized On-Resistance
Vs. Temperature
Fig 2. Typical Output CharacteristicsFig 1. Typical Output Characteristics
Fig 3. Typical Transfer Characteristics
10
100
1000
2 3 4 5 6
V = 15V
20µs PULSE WIDTH
DS
V , Gate-to-Source Voltage (V)
I , Drain-to-Source Current (A)
GS
D
T = 25 C
J
°
T = 150 C
J
°
-60 -40 -20 0 20 40 60 80 100 120 140 160
0.0
0.5
1.0
1.5
2.0
T , Junction Temperature( C)
R , Drain-to-Source On Resistance
(Normalized)
J
DS(on)
°
V =
I =
GS
D
4.5V
110A
10
100
1000
0.1 1 10 100
20µs PULSE WIDTH
T = 25 C
J
°
TOP
BOTTOM
VGS
7.00V
5.00V
4.50V
3.50V
3.00V
2.70V
2.50V
2.25V
V , Drain-to-Source Voltage (V)
I , Drain-to-Source Current (A)
DS
D
2.25V
10
100
1000
0.1 1 10 100
20µs PULSE WIDTH
T = 150 C
J
°
TOP
BOTTOM
VGS
7.00V
5.00V
4.50V
3.50V
3.00V
2.70V
2.50V
2.25V
V , Drain-to-Source Voltage (V)
I , Drain-to-Source Current (A)
DS
D
2.25V
P1-P3P4-P6P7-P7

IRL3502L

Mfr. #:
Buy IRL3502L
Manufacturer:
Vishay
Description:
MOSFET N-CH 20V 110A TO-262
Lifecycle:
New from this manufacturer.
Delivery:
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