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MJW21196G

P1-P3P4-P6P7-P7
© Semiconductor Components Industries, LLC, 2010
March, 2010 − Rev. 3
1 Publication Order Number:
MJW21195/D
MJW21195 (PNP)
MJW21196 (NPN)
Silicon Power Transistors
The MJW21195 and MJW21196 utilize Perforated Emitter
technology and are specifically designed for high power audio output,
disk head positioners and linear applications.
Features
• Total Harmonic Distortion Characterized
• High DC Current Gain − h
FE
= 20 Min @ I
C
= 8 Adc
• Excellent Gain Linearity
• High SOA: 2.25 A, 80 V, 1 Second
• Pb−Free Packages are Available*
MAXIMUM RATINGS
Rating Symbol Value Unit
Collector−Emitter Voltage V
CEO
250 Vdc
Collector−Base Voltage V
CBO
400 Vdc
Emitter−Base Voltage V
EBO
5.0 Vdc
Collector−Emitter Voltage − 1.5 V V
CEX
400 Vdc
Collector Current − Continuous
Collector Current − Peak (Note 1)
I
C
16
30
Adc
Base Current − Continuous I
B
5.0 Adc
Total Power Dissipation @ T
C
= 25°C
Derate Above 25°C
P
D
200
1.43
W
W/°C
Operating and Storage Junction
Temperature Range
T
J
, T
stg
−  65 to +150
°C
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Thermal Resistance, Junction−to−Case
R
q
JC
0.7 °C/W
Thermal Resistance, Junction−to−Ambient
R
q
JA
40 °C/W
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Pulse Test: Pulse Width = 5 ms, Duty Cycle ≤ 10%.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
Device Package Shipping
ORDERING INFORMATION
MJW21195 TO−247 30 Units/Rail
16 AMPERES
COMPLEMENTARY
SILICON POWER TRANSISTORS
250 VOLTS, 200 WATTS
MJW21196 TO−247 30 Units/Rail
http://onsemi.com
MJW21196G TO−247
(Pb−Free)
30 Units/Rail
30 Units/RailMJW21195G TO−247
(Pb−Free)
TO−247
CASE 340L
2
1
3
MARKING DIAGRAM
MJW2119x
AYWWG
x = 5 or 6
A = Assembly Location
Y = Year
WW = Work Week
G = Pb−Free Package
1 BASE
2 COLLECTOR
3 EMITTER
MJW21195 (PNP) MJW21196 (NPN)
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS (T
C
= 25°C unless otherwise noted)
Characteristic
Symbol Min Typical Max Unit
OFF CHARACTERISTICS
Collector−Emitter Sustaining Voltage (I
C
= 100 mAdc, I
B
= 0) V
CEO(sus)
250 − − Vdc
Collector Cutoff Current (V
CE
= 200 Vdc, I
B
= 0) I
CEO
− − 100
mAdc
Emitter Cutoff Current (V
CE
= 5 Vdc, I
C
= 0) I
EBO
− − 50
mAdc
Collector Cutoff Current (V
CE
= 250 Vdc, V
BE(off)
= 1.5 Vdc) I
CEX
− − 50
mAdc
SECOND BREAKDOWN
Second Breakdown Collector Current with Base Forward Biased
(V
CE
= 50 Vdc, t = 1 s (non−repetitive)
(V
CE
= 80 Vdc, t = 1 s (non−repetitive)
I
S/b
4.0
2.25
−
−
−
−
Adc
ON CHARACTERISTICS
DC Current Gain
(I
C
= 8 Adc, V
CE
= 5 Vdc)
(I
C
= 16 Adc, I
B
= 5 Adc)
h
FE
20
8
−
−
80
−
Base−Emitter On Voltage (I
C
= 8 Adc, V
CE
= 5 Vdc) V
BE(on)
− − 2.0 Vdc
Collector−Emitter Saturation Voltage
(I
C
= 8 Adc, I
B
= 0.8 Adc)
(I
C
= 16 Adc, I
B
= 3.2 Adc)
V
CE(sat)
−
−
−
−
1.0
3
Vdc
DYNAMIC CHARACTERISTICS
Total Harmonic Distortion at the Output
V
RMS
= 28.3 V, f = 1 kHz, P
LOAD
= 100 W
RMS
h
FE
unmatched
(Matched pair h
FE
= 50 @ 5 A/5 V) h
FE
matched
T
HD
−
−
0.8
0.08
−
−
%
Current Gain Bandwidth Product
(I
C
= 1 Adc, V
CE
= 10 Vdc, f
test
= 1 MHz)
f
T
4 − − MHz
Output Capacitance
(V
CB
= 10 Vdc, I
E
= 0, f
test
= 1 MHz)
C
ob
− − 500 pF
MJW21195 (PNP) MJW21196 (NPN)
http://onsemi.com
3
TYPICAL CHARACTERISTICS
I
C
, COLLECTOR CURRENT (AMPS)
Figure 1. Typical Current Gain
Bandwidth Product
Figure 2. Typical Current Gain
Bandwidth Product
, CURRENT BANDWIDTH PRODUCT (MHz)
T
PNP MJW21195 NPN MJW21196
I
C
, COLLECTOR CURRENT (AMPS)
6.5
6.0
5.5
5.0
4.5
4.0
2.5
2.0
1.0 100.1
7.5
7.0
6.0
5.0
4.0
3.0
2.0
1.0 100.1
1.0
V
CE
= 10 V
T
J
= 25°C
f
test
= 1 MHz
V
CE
= 10 V
T
J
= 25°C
f
test
= 1 MHz
3.5
3.0
6.5
5.5
4.5
3.5
2.5
1.5
F
, CURRENT BANDWIDTH PRODUCT (MHz)
T
F
V
CE
= 5 V
V
CE
= 5 V
Figure 3. DC Current Gain, V
CE
= 20 V Figure 4. DC Current Gain, V
CE
= 20 V
Figure 5. DC Current Gain, V
CE
= 5 V Figure 6. DC Current Gain, V
CE
= 5 V
h
FE
, DC CURRENT GAIN
I
C
, COLLECTOR CURRENT (AMPS)
I
C
, COLLECTOR CURRENT (AMPS)
h
FE
, DC CURRENT GAIN
h
FE
, DC CURRENT GAIN
I
C
, COLLECTOR CURRENT (AMPS)
I
C
, COLLECTOR CURRENT (AMPS)
PNP MJW21195 NPN MJW21196
h
FE
, DC CURRENT GAIN
PNP MJW21195 NPN MJW21196
1000
100
10
100101.00.1
1000
10
100101.00.1
1000
100
10
100101.00.1
1000
10
100101.00.1
V
CE
= 20 V
T
J
= 100°C
25°C
-25°C
V
CE
= 20 V
T
J
= 100°C
25°C
-25°C
V
CE
= 5 V
T
J
= 100°C
25°C
-25°C
V
CE
= 5 V
T
J
= 100°C
25°C
-25°C
100
100
P1-P3P4-P6P7-P7

MJW21196G

Mfr. #:
Buy MJW21196G
Manufacturer:
ON Semiconductor
Description:
Bipolar Transistors - BJT 16A 250V 200W NPN
Lifecycle:
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