Characteristics STPS5L60
2/12 Doc ID8727 Rev 4
1 Characteristics
Table 2. Absolute Ratings (limiting values, at 25 °C unless otherwise specified)
Symbol Parameter Value Unit
V
RRM
Repetitive peak reverse voltage 60 V
I
F(RMS)
Forward RMS current 15 A
I
F(AV)
Average forward current
DO-201AD T
L
= 100°C, δ = 0.5
5ASMC T
L
= 100°C, δ = 0.5
SMB T
L
= 80°C, δ = 0.5
I
FSM
Surge non repetitive forward current, half
sine wave, t
p
= 10 ms
DO-201AD, SMC 150
A
SMB 90
P
ARM
Repetitive peak avalanche power t
p
= 10 µs T
j
= 125 °C 280 W
T
stg
Storage temperature range -65 to +175 °C
T
j
Maximum operating junction temperature
(1)
1. condition to avoid thermal runaway for a diode on its own heatsink
150 °C
Table 3. Thermal resistance
Symbol Parameter Value Unit
R
th(j-a)
Junction to
ambient
DO-201AD 75
°C/W
R
th(j-l)
Junction to lead
DO-201AD Lead length = 10 mm 15
SMC 15
SMB 20
Table 4. Static electrical characteristics
Symbol Parameter Test conditions Min. Typ. Max. Unit
I
R
(1)
1. Pulse test: t
p
= 380 µs, δ < 2%
To evaluate the conduction losses use the following equation:
P = 0.39 x I
F(AV)
+ 0.028 I
F
2
(RMS)
Reverse leakage current
T
j
= 25 °C
V
R
= V
RRM
-0.22
mA
T
j
= 100 °C - 10 25
T
j
= 110 °C - 25 55
T
j
= 125 °C - 40 100
V
F
(1)
Forward voltage drop
T
j
= 25 °C
I
F
= 5A
- 0.47 0.52
VT
j
= 100 °C - 0.43 0.49
T
j
= 125 °C - 0.42 0.48
