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BUV22G

P1-P3P4-P4
© Semiconductor Components Industries, LLC, 2006
February, 2006 − Rev. 10
1 Publication Order Number:
BUV22/D
BUV22
SWITCHMODEt Series
NPN Silicon Power
Transistor
This device is designed for high speed, high current, high power
applications.
Features
• High DC Current Gain:
h
FE
min = 20 at I
C
= 10 A
• Low V
CE(sat)
, V
CE(sat)
max = 1.0 V at I
C
= 10 A
• Very Fast Switching Times:
TF max = 0.35 ms at I
C
= 20 A
• Pb−Free Package is Available*
MAXIMUM RATINGS
Rating Symbol Value Unit
Collector−Emitter Voltage V
CEO(SUS)
250 Vdc
Collector−Base Voltage V
CBO
300 Vdc
Emitter−Base Voltage V
EBO
7 Vdc
Collector−Emitter Voltage (V
BE
= −1.5 V) V
CEX
300 Vdc
Collector−Emitter Voltage (R
BE
= 100 W)
V
CER
290 Vdc
Collector−Current − Continuous
− Peak (PW v 10 ms)
I
C
I
CM
40
50
Adc
Apk
Base−Current Continuous I
B
8 Adc
Total Device Dissipation @ T
C
= 25_C
P
D
250 W
Operating and Storage Junction
Temperature Range
T
J
, T
stg
−65 to 200
_C
THERMAL CHARACTERISTICS
Characteristics Symbol Max Unit
Thermal Resistance, Junction−to−Case
q
JC
0.7
_C/W
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
40 AMPERES
NPN SILICON POWER
METAL TRANSISTOR
250 VOLTS − 250 WATTS
http://onsemi.com
MARKING DIAGRAM
Device Package Shipping
ORDERING INFORMATION
BUV22 TO−204 100 Units / Tray
BUV22G TO−204
(Pb−Free)
100 Units / Tray
BUV22G
AYWW
MEX
TO−204AE (TO−3)
CASE 197A
BUV22 = Device Code
G = Pb−Free Package
A = Assembly Location
Y = Year
WW = Work Week
MEX = Country of Origin
BUV22
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS (T
C
= 25_C unless otherwise noted)
Characteristic Symbol Min Max Unit
OFF CHARACTERISTICS (Note 1)
Collector−Emitter Sustaining Voltage
(I
C
= 200 mA, I
B
= 0, L = 25 mH)
V
CEO(sus)
250 Vdc
Collector Cutoff Current at Reverse Bias
(V
CE
= 300 V, V
BE
= −1.5 V)
(V
CE
= 300 V, V
BE
= −1.5 V, T
C
= 125_C)
I
CEX
3.0
12.0
mAdc
Collector−Emitter Cutoff Current
(V
CE
= 200 V)
I
CEO
3.0 mAdc
Emitter−Base Reverse Voltage
(I
E
= 50 mA)
V
EBO
7 V
Emitter−Cutoff Current
(V
EB
= 5 V)
I
EBO
1.0 mAdc
SECOND BREAKDOWN
Second Breakdown Collector Current with base forward biased
(V
CE
= 20 V, t = 1 s)
(V
CE
= 140 V, t = 1 s)
I
S/b
12
0.15
Adc
ON CHARACTERISTICS (Note 1)
DC Current Gain
(I
C
= 10 A, V
CE
= 4 V)
(I
C
= 20 A, V
CE
= 4 V)
h
FE
20
10
60
Collector−Emitter Saturation Voltage
(I
C
= 10 A, I
B
= 1 A)
(I
C
= 20 A, I
B
= 2.5 A)
V
CE(sat)
1.0
1.5
Vdc
Base−Emitter Saturation Voltage
(I
C
= 40 A, I
B
= 4 A)
V
BE(sat)
1.5 Vdc
DYNAMIC CHARACTERISTICS
Current Gain — Bandwidth Product
(V
CE
= 15 V, I
C
= 2 A, f = 4 MHz)
f
T
8.0 MHz
SWITCHING CHARACTERISTICS (Resistive Load)
Turn−on Time
(I
C
= 20 A, I
B1
= I
B2
= 2.5 A,
V
CC
= 100 V, R
C
= 5 W)
t
on
0.8 ms
Storage Time t
s
2.0
Fall Time t
f
0.35
1. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2%.
Figure 1. Power Derating
1.0
0
T
C
, TEMPERATURE (°C)
40 80 160 200
0.4
0.8
0.6
0.2
120
DERATING FACTOR
BUV22
http://onsemi.com
3
I
C
, COLLECTOR CURRENT (A)
Figure 2. Active Region Safe Operating Area
40
1
V
CE
, COLLECTOR−EMITTER VOLTAGE (V)
10 250
10
1
0.1
100
There are two limitations on the power handling ability of
a transistor: average junction temperature and second
breakdown. Safe operating area curves indicate I
C
− V
CE
limits of the transistor that must be observed for reliable
operation i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.
The data of Figure 2 is based on T
C
= 25_C; T
J(pk)
is
variable depending on power level. Second breakdown
limitations do not derate the same as thermal limitations.
At high case temperatures, thermal limitations will reduce
the power that can handled to values less than the limitations
imposed by second breakdown.
Figure 3. “On” Voltages
Figure 4. DC Current Gain
50
0.1
I
C
, COLLECTOR CURRENT (A)
110
40
0
30
20
10
V
CE
= 5 V
Figure 5. Resistive Switching Performance
3.0
4 8 12 16 24
t, TIME (s)μ
2.0
1.0 t
S
0.4
0.3
0.2
20
t
on
t
F
2.0
I
C
, COLLECTOR CURRENT (A)
110
1.6
I
C
/I
B
= 8
0.8
1.2
0.4
Figure 6. Switching Times Test Circuit
V, VOLTAGE (V)
I
C
, COLLECTOR CURRENT (A)
V
BE
V
CE
0
100
45
35
25
15
5
V
CC
I
B2
I
B1
R
B
R
C
R
C
− R
B
: Non inductive resistances
V
CC
= 100 V
R
C
=5 W
R
B
= 2.7 W
I
B1
=I
B2
I
C
/I
B
=8
10
4
mF
P1-P3P4-P4

BUV22G

Mfr. #:
Buy BUV22G
Manufacturer:
ON Semiconductor
Description:
Bipolar Transistors - BJT 40A 250V 250W NPN
Lifecycle:
New from this manufacturer.
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